STP310N10F7

STP310N10F7 N-channel 100 V, 2.3 mΩ typ., 180 A STripFET™ VII DeepGATE™ Power MOSFET in a TO-220 package Datasheet - production data Features TAB Order code VDS RDS(on) max. ID STP310N10F7 100 V 2.7 mΩ 180 A • Ultra low on-resistance • 100% avalanche tested 3 1 2 Applications TO-220 • Switching applications Description Figure 1. Internal schematic diagram '7$% This device utilizes the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. * 6 $0Y Table 1. Device summary Order codes Marking Package Packaging STP310N10F7 310N10F7 TO-220 Tube July 2013 This is information on a product in full production. DocID022287 Rev 7 1/13 www.st.com Contents STP310N10F7 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 DocID022287 Rev 7 STP310N10F7 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate-source voltage ± 20 V ID (1) Drain current (continuous) at TC = 25°C 180 A ID (1) Drain current (continuous) at TC=100°C 120 A IDM (2) Drain current (pulsed) 720 A PTOT Total dissipation at TC = 25°C 315 W Derating factor 2.1 W/°C 1 J - 55 to 175 °C EAS(3) Tj Tstg Single pulse avalanche energy (TJ = 25 °C, L=0.55 mH, Ias=65 A ) Operating junction temperature storage temperature 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. Starting TJ=25°C, ID=60 A, VDD=50 V Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.48 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W DocID022287 Rev 7 3/13 13 Electrical characteristics 2 STP310N10F7 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage (VGS= 0) ID = 250 µA Min. Typ. 100 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current VGS = 20 V (VDS = 0) 1 µA 100 µA 100 nA 3.5 4.5 V 2.3 2.7 mΩ Min. Typ. Max. Unit - 12800 - pF - 3500 - pF - 170 - pF - 180 - nC - 78 - nC - 34 - nC Min. Typ. Max. Unit - 62 - ns - 108 - ns - 148 - ns - 40 - ns VDS= 100 V, TC= 125°C VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS= 10 V, ID= 60 A Unit V VDS= 100 V IDSS Max. 2.5 Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-source charge Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 50 V, ID = 180 A, VGS = 10 V (see Figure 14) Table 6. Switching times Symbol td(on) tr td(off) tf 4/13 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 50 V, ID = 90 A RG = 4.7 Ω VGS = 10 V (see Figure 13, Figure 18) Fall time DocID022287 Rev 7 STP310N10F7 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 180 A ISDM(1) Source-drain current (pulsed) - 720 A VSD(2) Forward on voltage ISD=60 A, VGS=0 - 1.5 V trr Reverse recovery time - 85 ns Qrr Reverse recovery charge - 200 nC IRRM Reverse recovery current ISD=180 A, di/dt = 100 A/µs, VDD=80 V, Tj=150°C (see Figure 15) - 4.7 A 1. Pulse width limited by safe operating area. 2. Pulse duration = 300µs, duty cycle 1.5% DocID022287 Rev 7 5/13 13 Electrical characteristics 2.1 STP310N10F7 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM14733v1 ID (A) ea 280tok K is δ=0.5 n) ar is DS(o th in ax R ion y m at er d b p O ite Lim 100 0.2 0.1 10 100µs 0.05 -1 10 0.02 1 Tj=175°C Tc=25°C 1ms Sinlge pulse 10ms Zth=k Rthj-c δ=tp/τ 0.01 Single pulse tp τ -2 0.1 0.1 10 1 10 -5 10 VDS(V) Figure 4. Output characteristics ID (A) 300 -4 -2 -3 10 10 10 -1 10 tp (s) Figure 5. Transfer characteristics AM14734v1 VGS=10V AM14735v1 ID (A) 350 VDS = 2V 8V 7V 250 300 250 200 200 150 150 100 6V 100 50 50 0 0 5V 2 4 6 8 Figure 6. Gate charge vs gate-source voltage AM14736v1 VGS (V) VDD=50V ID=180A 10 0 0 VDS(V) 1 2 3 4 5 6 7 8 VGS(V) Figure 7. Static drain-source on-resistance AM14737v1 RDS(on) (mΩ) 2.45 VGS=10V 2.40 8 2.35 2.30 6 2.25 4 2.20 2 2.15 0 0 6/13 50 100 150 Qg(nC) 2.10 0 DocID022287 Rev 7 40 80 120 160 ID(A) STP310N10F7 Electrical characteristics Figure 8. Capacitance variations Figure 9. Source-drain diode forward characteristics AM14738v1 C (pF) 14000 AM14739v1 VSD (V) 1.05 Ciss TJ=-50°C 12000 0.95 10000 0.85 8000 TJ=25°C 0.75 6000 0.65 4000 Crss 2000 TJ=150°C 0.55 Coss 0 0 20 40 60 80 100 VDS(V) Figure 10. Normalized gate threshold voltage vs temperature AM14741v1 VGS(th) (norm) ID = 250µA 0.45 0 40 80 120 160 ISD(A) Figure 11. Normalized on-resistance vs temperature RDS(on) (norm) 2.0 AM14740v1 ID = 60A 1.0 1.6 0.90 1.2 0.80 0.8 0.70 0.60 -75 -25 0 25 75 125 TJ(°C) 0.4 -75 -25 0 25 75 125 TJ(°C) Figure 12. Normalized BVDSS vs temperature BVDSS (norm) AM14742v1 ID = 1mA 1.04 1.02 1.00 0.98 0.96 0.94 -75 -25 0 25 75 125 TJ(°C) DocID022287 Rev 7 7/13 13 Test circuits 3 STP310N10F7 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 DocID022287 Rev 7 10% AM01473v1 STP310N10F7 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID022287 Rev 7 9/13 13 Package mechanical data STP310N10F7 Table 8. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 10/13 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID022287 Rev 7 STP310N10F7 Package mechanical data Figure 19. TO-220 type A drawing BW\SH$B5HYB7 DocID022287 Rev 7 11/13 13 Revision history 5 STP310N10F7 Revision history Table 9. Document revision history 12/13 Date Revision Changes 19-Oct-2011 1 Initial version. 21-Dec-2011 2 Updated title and description in cover page. 06-Mar-2012 3 Updated ID value at TC = 25°C in the whole document. Table 5, Table 6 and Table 7 have been updated with typical values. 20-Aug-2012 4 Document status promoted from preliminary to production data. Added Section 2.1: Electrical characteristics (curves). Minor text changes. 31-Oct-2012 5 – Added: H2PAK-2 and H2PAK-6 packages – Updated: Section 4: Package mechanical data and Section 4: Package mechanical data – Minor text changes 07-Dec-2012 6 – Minor text changes – The part numbers STH310N10F7-2, STH310N10F7-6 have been moved to a separate datasheet 31-Jul-2013 7 – Modified: IDSS and VGS(th) values in Table 4. – Minor text changes – Inserted: EAS value in Table 2 DocID022287 Rev 7 STP310N10F7 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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