STP33N60DM2

STB33N60DM2, STP33N60DM2, STW33N60DM2 N-channel 600 V, 0.110 Ω typ., 24 A MDmesh™ DM2 Power MOSFET in D²PAK, TO-220 and TO-247 packages Datasheet - production data Features Order code VDS @ TJmax. RDS(on) max. ID STB33N60DM2 650 V 0.130 Ω 24 A STP33N60DM2 650 V 0.130 Ω 24 A STW33N60DM2 650 V 0.130 Ω 24 A   Figure 1: Internal schematic diagram     Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications  Switching applications Description These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STB33N60DM2 33N60DM2 D²PAK Tape and reel STP33N60DM2 33N60DM2 TO-220 Tube STW33N60DM2 33N60DM2 TO-247 Tube November 2015 DocID026854 Rev 2 This is information on a product in full production. 1/20 www.st.com Contents STB33N60DM2, STP33N60DM2, STW33N60DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 5 2/20 4.1 D²PAK package information ............................................................ 10 4.2 D²PAK packing information ............................................................. 13 4.3 TO-220 type A package information................................................ 15 4.4 TO-247 package information ........................................................... 17 Revision history ............................................................................ 19 DocID026854 Rev 2 STB33N60DM2, STP33N60DM2, STW33N60DM2 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter VGS ID Value Unit Gate-source voltage ±25 V Drain current (continuous) at Tcase = 25 °C 24 Drain current (continuous) at Tcase = 100 °C 15.5 A IDM(1) Drain current (pulsed) 96 A PTOT W Total dissipation at Tcase = 25 °C 190 dv/dt(2) Peak diode recovery voltage slope 50 dv/dt(3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature Tj V/ns -55 to 150 Operating junction temperature °C Notes: (1) Pulse width is limited by safe operating area. (2) ISD ≤ 24 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V. (3) VDS ≤ 480 V. Table 3: Thermal data Value Symbol Parameter Unit D²PAK Rthj-case Thermal resistance junction-case junction-pcb(1) Rthj-pcb Thermal resistance Rthj-amb Thermal resistance junction-ambient TO-220 TO-247 0.66 30 °C/W 62.5 50 Notes: (1)When mounted on 1 inch² FR-4, 2 Oz copper board. Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (Pulse width limited by Tjmax) 5.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 570 mJ DocID026854 Rev 2 3/20 Electrical characteristics 2 STB33N60DM2, STP33N60DM2, STW33N60DM2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5: Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 600 V VGS = 0 V, VDS = 600 V 1 VGS = 0 V, VDS = 600 V, Tcase = 125 °C 100 IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS = 10 V, ID = 12 A Unit µA ±10 µA 4 5 V 0.110 0.130 Ω Min. Typ. Max. Unit - 1870 - - 87 - - 2 - 3 Table 6: Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDD = 480 V, VGS = 0 V - 157 - pF RG Intrinsic gate resistance f = 1 MHz, ID= 0 A - 4.5 - Ω Qg Total gate charge - Qgs Gate-source charge Qgd Gate-drain charge VDD = 480 V, ID = 24 A, VGS = 10 V (see Figure 19: "Test circuit for gate charge behavior" and Figure 23: "Switching time waveform") VDS = 100 V, f = 1 MHz, VGS = 0 V 43 pF - - 9.8 - - 21 - nC Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 7: Switching times Symbol td(on) tr td(off) tf 4/20 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 12 A RG = 4.7 Ω, VGS = 10 V (see Figure 18: "Test circuit for resistive load switching times" and ) DocID026854 Rev 2 Min. Typ. Max. - 17 - - 8 - - 62 - - 9 - Unit ns STB33N60DM2, STP33N60DM2, STW33N60DM2 Electrical characteristics Table 8: Source-drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 24 A ISDM(1) Source-drain current (pulsed) - 96 A VSD(2) Forward on voltage VGS = 0 V, ISD = 24 A - 1.6 V ISD = 24 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 20: "Test circuit for inductive load switching and diode recovery times") - 150 ns - 0.5 µC - 8.8 A ISD = 24 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 20: "Test circuit for inductive load switching and diode recovery times") - 316 ns - 2.85 µC - 18 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A ±30 - - V DocID026854 Rev 2 5/20 Electrical characteristics 2.1 STB33N60DM2, STP33N60DM2, STW33N60DM2 Electrical characteristics (curves) Figure 2: Safe operating area for D²PAK Figure 3: Thermal impedance for D²PAK K δ=0.5 0.2 0.1 10 -1 0.05 0.02 Zth= K*Rthj-c δ= tp/Ƭ 0.01 Single pulse 10 -2 10 -5 Figure 4: Safe operating area for TO-220 10 -4 10 tp -3 10 -2 Ƭ 10 -1 t P (s) Figure 5: Thermal impedance for TO-220 K δ=0.5 0.2 0.1 10 -1 0.05 0.02 Zth= K*Rthj-c δ= tp/Ƭ 0.01 Single pulse 10 10 -5 Figure 6: Safe operating area for TO-247 6/20 DocID026854 Rev 2 tp Ƭ -2 10 -4 10 -3 10 -2 10 -1 t P (s) Figure 7: Thermal impedance for TO-247 STB33N60DM2, STP33N60DM2, STW33N60DM2 Electrical characteristics Figure 8: Output characteristics Figure 9: Transfer characteristics Figure 10: Gate charge vs gate-source voltage Figure 11: Static drain-source on-resistance Figure 12: Capacitance variations Figure 13: Normalized gate threshold voltage vs temperature DocID026854 Rev 2 7/20 Electrical characteristics 8/20 STB33N60DM2, STP33N60DM2, STW33N60DM2 Figure 14: Normalized on-resistance vs temperature Figure 15: Normalized V(BR)DSS vs temperature Figure 16: Output capacitance stored energy Figure 17: Source- drain diode forward characteristics DocID026854 Rev 2 STB33N60DM2, STP33N60DM2, STW33N60DM2 3 Test circuits Test circuits Figure 19: Test circuit for gate charge behavior Figure 18: Test circuit for resistive load switching times Figure 20: Test circuit for inductive load switching and diode recovery times Figure 21: Unclamped inductive load test circuit Figure 22: Unclamped inductive waveform DocID026854 Rev 2 Figure 23: Switching time waveform 9/20 Package information 4 STB33N60DM2, STP33N60DM2, STW33N60DM2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 D²PAK package information Figure 24: D²PAK (TO-263) type A package outline 0079457_A_rev22 10/20 DocID026854 Rev 2 STB33N60DM2, STP33N60DM2, STW33N60DM2 Package information Table 10: D²PAK (TO-263) type A package mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° DocID026854 Rev 2 8° 11/20 Package information STB33N60DM2, STP33N60DM2, STW33N60DM2 Figure 25: D²PAK (TO-263) recommended footprint (dimensions are in mm) 12/20 DocID026854 Rev 2 STB33N60DM2, STP33N60DM2, STW33N60DM2 4.2 Package information D²PAK packing information Figure 26: Tape outline DocID026854 Rev 2 13/20 Package information STB33N60DM2, STP33N60DM2, STW33N60DM2 Figure 27: Reel outline Table 11: D²PAK tape and reel mechanical data Tape Reel mm mm Dim. 14/20 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID026854 Rev 2 Min. Max. 330 13.2 26.4 30.4 STB33N60DM2, STP33N60DM2, STW33N60DM2 4.3 Package information TO-220 type A package information Figure 28: TO-220 type A package outline DocID026854 Rev 2 15/20 Package information STB33N60DM2, STP33N60DM2, STW33N60DM2 Table 12: TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 16/20 Typ. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID026854 Rev 2 STB33N60DM2, STP33N60DM2, STW33N60DM2 4.4 Package information TO-247 package information Figure 29: TO-247 package outline DocID026854 Rev 2 17/20 Package information STB33N60DM2, STP33N60DM2, STW33N60DM2 Table 13: TO-247 package mechanical data mm. Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 18/20 Typ. 5.45 5.60 18.50 ØP 3.55 ØR 4.50 S 5.30 DocID026854 Rev 2 3.65 5.50 5.50 5.70 STB33N60DM2, STP33N60DM2, STW33N60DM2 5 Revision history Revision history Table 14: Document revision history Date Revision 16-Oct-2014 1 First release. 2 Document status promoted from preliminary to production data. Updated title and features in cover page. Updated Table 2: "Absolute maximum ratings", Table 4: "Avalanche characteristics", Table 5: "Static", Table 6: "Dynamic", Table 7: "Switching times" and Table 8: "Source-drain diode". Added Section 2.1 Electrical characteristics (curves). 02-Nov-2015 Changes DocID026854 Rev 2 19/20 STB33N60DM2, STP33N60DM2, STW33N60DM2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 20/20 DocID026854 Rev 2