STP33N60DM6
Datasheet
N-channel 600 V, 115 mΩ typ., 25 A, MDmesh™ DM6 Power MOSFET
in a TO‑220 package
Features
TAB
1
2
3
TO-220
D(2, TAB)
Order code
VDS
RDS(on) max.
ID
STP33N60DM6
600 V
128 mΩ
25 A
•
•
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
•
•
•
•
•
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
High-creepage package
G(1)
Applications
S(3)
AM01475V1
•
Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6
combines very low recovery charge (Qrr), recovery time (trr) and excellent
improvement in RDS(on) per area with one of the most effective switching behaviors
available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Product status link
STP33N60DM6
Product summary
Order code
STP33N60DM6
Marking
33N60DM6
Package
TO-220
Packing
Tube
DS12878 - Rev 3 - May 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
STP33N60DM6
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Value
Unit
Gate-source voltage
±25
V
Drain current (continuous) at TC = 25 °C
25
A
Drain current (continuous) at TC = 100 °C
16
A
Drain current (pulsed)
80
A
Total power dissipation at TC = 25 °C
190
W
dv/dt(2)
Peak diode recovery voltage slope
100
V/ns
di/dt(2)
Peak diode recovery current slope
1000
A/µs
dv/dt(3)
MOSFET dv/dt ruggedness
100
V/ns
Tstg
Storage temperature range
-55 to 150
°C
Value
Unit
VGS
ID
IDM
(1)
PTOT
Tj
Parameter
Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. ISD ≤ 25 A, VDS(peak) < V(BR)DSS, VDD = 400 V
3. VDS ≤ 480 V
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
0.66
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
°C/W
Value
Unit
Table 3. Avalanche characteristics
Symbol
DS12878 - Rev 3
Parameter
IAR
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
4
A
EAS
Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)
360
mJ
page 2/12
STP33N60DM6
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4. On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
Min.
Typ.
600
Zero gate voltage drain current
1
µA
100
µA
±5
µA
4
4.75
V
115
128
mΩ
Min.
Typ.
Max.
Unit
-
1500
-
pF
-
115
-
pF
-
3
-
pF
VGS = 0 V, VDS = 600 V,
TC = 125 °C(1)
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 12.5 A
Unit
V
VGS = 0 V, VDS = 600 V
IDSS
Max.
3.25
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
(1)
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0 V
Equivalent output capacitance
VDS = 0 to 480 V, VGS = 0 V
-
225
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
1.8
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 25 A,
-
35
-
nC
Qgs
Gate-source charge
VGS = 0 to 10 V
-
10
-
nC
Qgd
Gate-drain charge
(see Figure 14. Test circuit for gate
charge behavior)
-
15
-
nC
Coss eq.
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
DS12878 - Rev 3
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
VDD = 300 V, ID = 12.5 A,
-
14
-
ns
Rise time
RG = 4.7 Ω, VGS = 10 V
-
9
-
ns
Turn-off delay time
(see Figure 13. Test circuit for
resistive load switching times and
Figure 18. Switching time
waveform)
-
7
-
ns
-
35
-
ns
Fall time
page 3/12
STP33N60DM6
Electrical characteristics
Table 7. Source drain diode
Symbol
ISD
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
-
25
A
ISDM(1)
Source-drain current (pulsed)
-
80
A
VSD(2)
Forward on voltage
VGS = 0 V, ISD = 25 A
-
1.6
V
trr
Reverse recovery time
ISD = 25 A, di/dt = 100 A/µs,
-
105
ns
Qrr
Reverse recovery charge
VDD = 60 V
-
0.47
µC
Reverse recovery current
(see Figure 15. Test circuit for
inductive load switching and diode
recovery times)
-
9
A
trr
Reverse recovery time
ISD = 25 A, di/dt = 100 A/µs,
-
210
ns
Qrr
Reverse recovery charge
VDD = 60 V, Tj = 150 °C
-
1.68
µC
Reverse recovery current
(see Figure 15. Test circuit for
inductive load switching and diode
recovery times)
-
16
A
IRRM
IRRM
1. Pulse width is limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.
DS12878 - Rev 3
page 4/12
STP33N60DM6
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 2. Normalized thermal impedance
Figure 1. Safe operating area
GC20540
ID
(A)
GADG191220180852SOA
Operation in this area
is limited by RDS(on)
tp = 1 μs
101
tp = 10 μs
100
tp = 100 μs
Single pulse,
TC = 25 °C,
TJ ≤ 150 °C
10-1
10-2
10-1
100
tp = 1 ms
101
tp = 10 ms
VDS (V)
102
Figure 3. Output characteristics
ID
(A)
Figure 4. Transfer characteristics
ID
(A)
GADG191220180852OCH
VGS = 10 V
VGS = 9 V
70
70
VGS = 8 V
60
50
40
40
VGS = 7 V
30
30
20
20
10
10
VGS = 6 V
0
0
4
8
12
16
VDS (V)
0
4
Figure 5. Gate charge vs gate-source voltage
VDS
(V)
GADG191220180853QVG
VDD = 480 V, ID = 25 A
600
8
Qgd
300
6
200
4
100
2
DS12878 - Rev 3
5
10
15
5
6
7
8
9
VGS (V)
Figure 6. Capacitance variations
C
(pF)
GADG191220180854CVR
10 4
10
VDS
Qgs
VGS
(V)
12
Qg
500
0
0
VDS = 20 V
60
50
400
GADG191220180853TCH
20
25
30
35
0
Qg (nC)
CISS
10 3
10 2
10 1
10 0
10 -1
COSS
f = 1 MHz
CRSS
10 0
10 1
10 2
VDS (V)
page 5/12
STP33N60DM6
Electrical characteristics (curves)
Figure 7. Static drain-source on-resistance
RDS(on)
(mΩ)
GADG191220180855RID
Figure 8. Normalized on-resistance vs temperature
RDS(on)
(norm.)
127
2.5
123
2.0
VGS = 10 V
119
1.0
111
0.5
5
10
15
20
25
ID (A)
Figure 9. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm.)
GADG191220180856VTH
0.0
-75
-25
25
75
125
Tj (°C)
Figure 10. Normalized V(BR)DSS vs temperature
V(BR)DSS
(norm.)
GADG191220180856BDV
1.10
1.1
ID = 1 mA
1.05
1.0
0.9
1.00
ID = 250 µA
0.95
0.8
0.90
0.7
0.6
-75
VGS = 10 V
1.5
115
107
0
GADG191220180856RON
-25
25
75
125
Tj (°C)
Figure 11. Output capacitance stored energy
EOSS
(μJ)
14
GADG191220180857EOS
0.85
-75
-25
25
125
Tj (°C)
Figure 12. Source-drain diode forward characteristics
VSD
(V)
GADG191220180856SDF
1.1
12
75
TJ = -50 °C
1.0
10
TJ = 25 °C
0.9
8
0.8
6
TJ = 150 °C
0.7
4
0.6
2
0
0
DS12878 - Rev 3
100
200
300
400
500
600
VDS (V)
0.5
0
5
10
15
20
25
ISD (A)
page 6/12
STP33N60DM6
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
Figure 14. Test circuit for gate charge behavior
VDD
RL
RL
2200
+ μF
3.3
μF
VDD
VD
IG= CONST
VGS
+
pulse width
RG
VGS
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v10
AM01468v1
Figure 15. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
L
A
VD
100 µH
fast
diode
B
B
B
3.3
µF
D
G
+
Figure 16. Unclamped inductive load test circuit
RG
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
D.U.T.
Vi
_
pulse width
AM01471v1
AM01470v1
Figure 18. Switching time waveform
Figure 17. Unclamped inductive waveform
ton
V(BR)DSS
td(on)
toff
td(off)
tr
tf
VD
90%
90%
IDM
VDD
10%
0
ID
VDD
AM01472v1
VGS
0
VDS
10%
90%
10%
AM01473v1
DS12878 - Rev 3
page 7/12
STP33N60DM6
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
4.1
TO-220 type A package information
Figure 19. TO-220 type A package outline
0015988_typeA_Rev_23
DS12878 - Rev 3
page 8/12
STP33N60DM6
TO-220 type A package information
Table 8. TO-220 type A package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
Slug flatness
DS12878 - Rev 3
Typ.
0.03
0.10
page 9/12
STP33N60DM6
Revision history
Table 9. Document revision history
DS12878 - Rev 3
Date
Version
Changes
10-Jan-2019
1
First release.
25-Jan-2019
2
Updated ID current values in front page and Table 1. Absolute maximum
ratings.
18-May-2020
3
Updated Table 1. Absolute maximum ratings and Table 7. Source drain diode.
page 10/12
STP33N60DM6
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
DS12878 - Rev 3
page 11/12
STP33N60DM6
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DS12878 - Rev 3
page 12/12