STB34N65M5, STI34N65M5,
STP34N65M5, STW34N65M5
N-channel 650 V, 0.09 Ω typ., 28 A MDmesh™ V Power MOSFETs
in D2PAK, I2PAK, TO-220 and TO-247 packages
Datasheet - production data
Features
TAB
TAB
Order codes
2
3
1
3
12
D2PAK
VDS @ TJmax
RDS(on) max
ID
710 V
0.11 Ω
28 A
STB34N65M5
I2PAK
STI34N65M5
STP34N65M5
TAB
STW34N65M5
3
1
2
2
3
1
TO-220
• Worldwide best RDS(on) * area
• Higher VDSS rating and high dv/dt capability
• Excellent switching performance
TO-247
• 100% avalanche tested
Figure 1. Internal schematic diagram
Applications
$
• Switching applications
Description
'
3
!-V
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order codes
Marking
Packages
Packaging
D2PAK
Tape and reel
STB34N65M5
I2PAK
STI34N65M5
34N65M5
STP34N65M5
TO-220
STW34N65M5
TO-247
October 2013
This is information on a product in full production.
DocID022853 Rev 3
Tube
1/22
www.st.com
Contents
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22
.............................................. 9
DocID022853 Rev 3
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VGS
Parameter
Gate-source voltage
Value
Unit
± 25
V
ID
Drain current (continuous) at TC = 25 °C
28
A
ID
Drain current (continuous) at TC = 100 °C
17.7
A
IDM (1)
Drain current (pulsed)
112
A
PTOT
Total dissipation at TC = 25 °C
190
W
dv/dt
(1)
Peak diode recovery voltage slope
15
V/ns
dv/dt
(2)
MOSFET dv/dt ruggedness
50
V/ns
- 55 to 150
°C
150
°C
Tstg
Tj
Storage temperature
Max. operating junction temperature
1. ISD ≤ 28 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V.
2. VDS ≤ 480 V
Table 3. Thermal data
Value
Symbol
Parameter
D2PAK
TO-220,
I2PAK
Rthj-case Thermal resistance junction-case max
max(1)
Rthj-pcb
Thermal resistance junction-pcb
Rthj-amb
Thermal resistance junction-ambient max
Unit
TO-247
0.66
°C/W
30
°C/W
62.5
50
°C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 4. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
EAS
Single pulse avalanche energy (starting tj=25°C,
Id= IAR; Vdd=50)
DocID022853 Rev 3
Value
Unit
7
A
510
mJ
3/22
22
Electrical characteristics
2
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
Test conditions
ID = 1 mA, VGS = 0
IDSS
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Min.
Typ.
Max.
Unit
650
V
1
100
µA
µA
± 100
nA
4
5
V
0.09
0.11
Ω
Min.
Typ.
Max.
Unit
-
2700
-
pF
-
75
-
pF
-
6.3
-
pF
-
220
-
pF
-
63
-
pF
f = 1 MHz open drain
-
1.95
-
Ω
VDD = 520 V, ID = 14 A,
VGS = 10 V
(see Figure 18)
-
62.5
-
nC
-
17
-
nC
-
28
-
nC
VGS = ± 25 V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
3
VGS = 10 V, ID = 14 A
Table 6. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Co(tr)(1)
Equivalent
capacitance time
related
Co(er)(2)
Equivalent
capacitance energy
related
RG
Intrinsic gate
resistance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0
VDS = 0 to 520 V, VGS = 0
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/22
DocID022853 Rev 3
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td (v)
Voltage delay time
tr (v)
Voltage rise time
tf (i)
Current fall time
tc(off)
Test conditions
VDD = 400 V, ID = 18 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19 and
Figure 22)
Crossing time
Min.
Typ.
Max. Unit
-
59
-
ns
-
8.7
-
ns
-
7.5
-
ns
-
12
-
ns
Min.
Typ.
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Max. Unit
Source-drain current
-
28
A
ISDM
(1)
Source-drain current (pulsed)
-
112
A
VSD
(2)
Forward on voltage
-
1.5
V
ISD
trr
ISD = 28 A, VGS = 0
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 28 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 22)
ISD = 28 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 22)
-
350
ns
-
5.6
µC
-
32
A
-
422
ns
-
7.4
µC
-
35
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID022853 Rev 3
5/22
22
Electrical characteristics
2.1
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Electrical characteristics (curves)
Figure 2. Safe operating area for D2PAK, I2PAK Figure 3. Thermal impedance for D2PAK, I2PAK
and TO-220
and TO-220
AM15311v1
n)
D
S(
o
O
p
Li era
m
ite tion
d
by in t
m his
ax a
R rea
100
is
ID
(A)
10
10µs
100µs
1ms
Tj=150°C
Tc=25°C
1
10ms
Single
pulse
0.1
0.1
10
1
100
VDS(V)
Figure 4. Safe operating area for TO-247
Figure 5. Thermal impedance for TO-247
AM15318v1
ID
(A)
100
is
ea )
ar S(on
D
R
t
in ax
n
io y m
t
b
ra
pe ed
O imit
L
10µs
s
hi
10
100µs
1ms
Tj=150°C
Tc=25°C
1
10ms
Single
pulse
0.1
0.1
10
1
100
VDS(V)
Figure 6. Output characteristics
Figure 7. Transfer characteristics
AM15319v1
ID
(A)
80
VGS= 9 V
VGS= 8 V
70
VDS= 25 V
70
60
60
50
50
40
40
VGS= 7 V
30
30
20
20
10
10
VGS= 6 V
0
0
6/22
AM15320v1
ID
(A)
80
5
10
15
20
25 VDS(V)
DocID022853 Rev 3
0
3
4
5
6
7
8
9 VGS(V)
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Figure 8. Gate charge vs gate-source voltage
AM15321v1
VGS
(V)
12
VDS
(V)
500
VDD=520 V
ID=14 A
VDS
10
400
300
6
AM15322v1
RDS(on)
(Ω)
0.096
0.096
VGS=10V
0.094
0.09
0.088
200
4
100
2
0
Figure 9. Static drain-source on-resistance
0.092
8
0
Electrical characteristics
0.086
0.084
0.082
20
30
40
50
60
70
0
80 Qg(nC)
Figure 10. Capacitance variations
10
5
15
20
25 ID(A)
Figure 11. Output capacitance stored energy
AM15323v1
C
(pF)
0.08
0
AM15324v1
Eoss
(µJ)
12
1000
10
Ciss
1000
8
6
100
Coss
4
10
Crss
1
0.1
1
10
100
0
0
VDS(V)
Figure 12. Normalized gate threshold voltage vs
temperature
AM05459v1
VGS(th)
(norm)
1.10
2
VDS = VGS
ID = 250 µA
100
200 300
400 500 600
VDS(V)
Figure 13. Normalized on-resistance vs
temperature
AM05460v1
RDS(on)
(norm)
2.1
VGS = 10 V
ID = 14 A
1.9
1.00
1.7
1.5
1.3
0.90
1.1
0.9
0.80
0.7
0.70
-50 -25
0
25
50
75 100
TJ(°C)
0.5
-50 -25
DocID022853 Rev 3
0
25
50
75 100
TJ(°C)
7/22
22
Electrical characteristics
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Figure 14. Source-drain diode forward
characteristics
AM05461v1
VSD
(V)
Figure 15. Normalized VDS vs temperature
AM10399v1
VDS
(norm)
TJ=-50°C
1.08
1.2
ID = 1mA
1.06
1.0
1.04
0.8
1.02
TJ=25°C
1.00
0.6
TJ=150°C
0.98
0.4
0.96
0.2
0
0.94
0
10
30
20
40
50 ISD(A)
0.92
-50 -25
Figure 16. Switching losses vs gate resistance
(1)
AM15325v1
E (μJ)
500
Eon
VDD=400 V
VGS=10 V
ID=18 A
400
300
200
Eoff
100
0
0
10
20
30
40
RG(Ω)
1. Eon including reverse recovery of a SiC diode
8/22
DocID022853 Rev 3
0
25
50
75 100
TJ(°C)
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
3
Test circuits
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 19. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 20. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 21. Unclamped inductive waveform
Figure 22. Switching time waveform
Inductive Load Turn - off
V(BR)DSS
Id
VD
90%Vds
90%Id
td(v)
IDM
Vgs
90%Vgs
on
ID
))
Vgs(I(t))
VDD
VDD
10%Id
10%Vds
Vds
tr(v)
AM01472v1
DocID022853 Rev 3
tf(i)
tc(off)
AM05540v1
9/22
22
Package mechanical data
4
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/22
DocID022853 Rev 3
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Package mechanical data
Table 9. D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
E
10
E1
8.50
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
0.4
0°
8°
DocID022853 Rev 3
11/22
22
Package mechanical data
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Figure 23. D²PAK (TO-263) drawing
0079457_T
Figure 24. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
a. All dimension are in millimeters
12/22
DocID022853 Rev 3
Footprint
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Package mechanical data
Table 10. I²PAK (TO-262) mechanical data
mm.
DIM.
min.
typ
max.
A
4.40
4.60
A1
2.40
2.72
b
0.61
0.88
b1
1.14
1.70
c
0.49
0.70
c2
1.23
1.32
D
8.95
9.35
e
2.40
2.70
e1
4.95
5.15
E
10
10.40
L
13
14
L1
3.50
3.93
L2
1.27
1.40
DocID022853 Rev 3
13/22
22
Package mechanical data
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Figure 25. I²PAK (TO-262) drawing
0004982_Rev_H
14/22
DocID022853 Rev 3
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Package mechanical data
Table 11. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
DocID022853 Rev 3
15/22
22
Package mechanical data
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Figure 26. TO-220 type A drawing
?TYPE!?2EV?4
16/22
DocID022853 Rev 3
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Package mechanical data
Table 12. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID022853 Rev 3
5.70
17/22
22
Package mechanical data
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Figure 27. TO-247 drawing
0075325_G
18/22
DocID022853 Rev 3
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
5
Packaging mechanical data
Packaging mechanical data
Table 13. D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID022853 Rev 3
Min.
Max.
330
13.2
26.4
30.4
19/22
22
Packaging mechanical data
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Figure 28. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
W
K0
B0
For machine ref. only
including draft and
radii concentric around B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 29. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
20/22
DocID022853 Rev 3
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
6
Revision history
Revision history
Table 14. Document revision history
Date
Revision
23-Feb-2012
1
First release.
2
– Added package, mechanical data: I²PAKFP
– Updated Table 1: Device summary, Table 2: Absolute maximum
ratings, Table 3: Thermal data.
– Minor text changes.
– Curves inserted
3
– The part numbers STF34N65M5 and STFI34N65M5 have been
moved to the separate datasheet
– Modified: Figure 1
– Added: MOSFET dv/dt ruggedness parameter in Table 2
– Updated: Section 4: Package mechanical data and Section 5:
Packaging mechanical data
– Minor text changes
15-Oct-2012
02-Oct-2013
Changes
DocID022853 Rev 3
21/22
22
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
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