STP35N65DM2

STP35N65DM2 N-channel 650 V, 0.093 Ω typ., 32 A MDmesh™ DM2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP35N65DM2 650 V 0.110 Ω 32 A 250 W TAB 1 2 3   TO-220     Figure 1: Internal schematic diagram Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STP35N65DM2 35N65DM2 TO-220 Tube December 2017 DocID030872 Rev 2 This is information on a product in full production. 1/13 www.st.com Contents STP35N65DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 5 2/13 TO-220 type A package information................................................ 10 Revision history ............................................................................ 12 DocID030872 Rev 2 STP35N65DM2 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at Tcase = 25 °C 32 Drain current (continuous) at Tcase = 100 °C 20 IDM(1) Drain current (pulsed) 90 A PTOT W VGS ID Parameter Total dissipation at Tcase = 25 °C 250 dv/dt(2) Peak diode recovery voltage slope 50 dv/dt(3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature range Tj Operating junction temperature range A V/ns -55 to 150 °C Notes: (1)Pulse (2)I SD (3)V width is limited by safe operating area. ≤ 32 A, di/dt=900 A/μs, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS DS ≤ 520 V Table 3: Thermal data Symbol Parameter Value Rthj-case Thermal resistance junction-case 0.5 Rthj-amb Thermal resistance junction-ambient 62.5 Unit °C/W Table 4: Avalanche characteristics Symbol IAR EAS(1) Parameter Avalanche current, repetitive or non-repetitive Single pulse avalanche energy Value Unit 4 A 1150 mJ Notes: (1)Starting Tj = 25 °C, ID = IAR, VDD = 50 V. DocID030872 Rev 2 3/13 Electrical characteristics 2 STP35N65DM2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5: Static Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 650 Unit V VGS = 0 V, VDS = 650 V 1 VGS = 0 V, VDS = 650 V, Tcase = 125 °C(1) 100 Gate-body leakage current VDS = 0 V, VGS = ±25 V ±5 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 16 A 0.093 0.110 Ω Min. Typ. Max. Unit - 2540 - - 115 - - 2.5 - IDSS Zero gate voltage drain current IGSS 3 µA Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 V - 204 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 4.2 - Ω Qg Total gate charge - 56.3 - Qgs Gate-source charge - 12.7 - Qgd Gate-drain charge VDD = 520 V, ID = 32 A, VGS = 0 to 10 V (see Figure 15: "Test circuit for gate charge behavior") - 27.6 - VDS = 100 V, f = 1 MHz, VGS = 0 V pF nC Notes: (1)C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS increases from 0 to 80% VDSS. Table 7: Switching times Symbol td(on) tr td(off) tf 4/13 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. Max. VDD = 325 V, ID = 16 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform") - 23.4 - - 23 - - 72 - - 10.4 - DocID030872 Rev 2 Unit ns STP35N65DM2 Electrical characteristics Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 32 A ISDM(1) Source-drain current (pulsed) - 90 A VSD(2) Forward on voltage - 1.6 V trr VGS = 0 V, ISD = 32 A Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 100 ns - 0.42 µC - 8.4 A - 205 ns - 1.8 µC - 17.6 A Notes: (1)Pulse width is limited by safe operating area. (2)Pulse test: pulse duration = 300 µs, duty cycle 1.5% DocID030872 Rev 2 5/13 Electrical characteristics 2.1 STP35N65DM2 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance 6/13 DocID030872 Rev 2 STP35N65DM2 Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Output capacitance stored energy Figure 13: Source- drain diode forward characteristics DocID030872 Rev 2 7/13 Test circuits 3 8/13 STP35N65DM2 Test circuits Figure 14: Test circuit for resistive load switching times Figure 15: Test circuit for gate charge behavior Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform DocID030872 Rev 2 STP35N65DM2 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID030872 Rev 2 9/13 Package information 4.1 STP35N65DM2 TO-220 type A package information Figure 20: TO-220 type A package outline 10/13 DocID030872 Rev 2 STP35N65DM2 Package information Table 9: TO-220 type A package mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID030872 Rev 2 11/13 Revision history 5 STP35N65DM2 Revision history Table 10: Document revision history Date Revisi on 21-Jul-2017 1 Initial release 2 Document status changed from preliminary to production data. Updated Table 2: "Absolute maximum ratings" and Table 8: "Sourcedrain diode". Updated Figure 2: "Safe operating area" . Minor text changes. 6-Dec-2017 12/13 Changes DocID030872 Rev 2 STP35N65DM2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID030872 Rev 2 13/13