STP36NE06FP

® STP36NE06 STP36NE06FP N - CHANNEL 60V - 0.032Ω - 36A - TO-220/TO-220FP STripFET™ POWER MOSFET TYPE ST P36NE06 ST P36NE06FP s s s s s V DSS 60 V 60 V R DS(on) < 0.040 Ω < 0.040 Ω ID 36 A 20 A TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION 1 2 3 1 2 3 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP36NE06 V DS V DGR V GS ID ID IDM ( • ) P t ot Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor V ISO dv/dt T stg Tj July 1998 Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature o o o Uni t STP36NE06FP 60 60 ± 20 V V V 20 14 144 35 0.27 2000 7 A A A W W/ C V V/ ns o o o 36 24 144 100 0.66  -65 to 175 175 ( 1) ISD ≤ 36 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX C C 1/9 (•) Pulse width limited by safe operating area STP36NE06FP THERMAL DATA T O-220 R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Max 1.51 62.5 0.5 300 TO-220F P 4.28 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 25V) Max Valu e 36 180 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µ A V GS = 0 Min. 60 1 10 ± 100 Typ . Max. Un it V µA µA nA V DS = Max Rating Zero G ate Voltage Drain Current (VGS = 0) V DS = Max Rating o C Gate-body Leakage Current (V DS = 0) V GS = ± 2 0 V T c = 125 I GSS ON (∗) Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate Threshold Voltage V DS = VGS Test Cond ition s ID = 250 µ A ID = 18 A 36 Min. 2 Typ . 3 0.032 Max. 4 0.04 Un it V Ω A Static Drain-source On V GS = 10V Resistance On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V DYNAMIC Symb ol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitance Test Cond ition s V DS > I D(on) x R DS(on) max V DS = 25 V f = 1 MHz I D =18 A VGS = 0 Min. 7 Typ . 15 2115 260 65 2800 350 90 Max. Un it S pF pF pF 2/9 STP36NE06FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr (di/dt) on Qg Q gs Q gd Parameter Turn-on Time Rise Time Turn-on Current Slope Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond ition s V DD = 30 V R G =4.7 Ω V DD = 48 V R G = 4.7 Ω V DD = 48 V ID = 18 A V GS = 10 V ID = 36 A V GS =10 V I D = 36 A V GS = 10 V Min. Typ . 28 85 250 50 13 18 70 Max. 40 115 Un it ns ns A/ µ s nC nC nC SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s V DD = 48 V I D = 36 A R G =4.7 Ω VGS = 10 V Min. Typ . 12 25 40 Max. 16 35 55 Un it ns ns ns SOURCE DRAIN DIODE Symb ol I SD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 36 A I SD = 36 A V DD = 30 V V GS = 0 di/dt = 100 A/µ s o Tj = 150 C 75 245 6.5 Test Cond ition s Min. Typ . Max. 36 144 1.5 Un it A A V ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for TO-220FP 3/9 STP36NE06FP Thermal Impedance for TO-220 Thermal Impedance forTO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/9 STP36NE06FP Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STP36NE06FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STP36NE06FP TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 E mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 A C D1 L2 F1 D G1 Dia. F2 F L5 L7 L6 L9 L4 G H2 P011C 7/9 STP36NE06FP TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Ø 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 ¯ F D G1 E H F2 123 L2 L4 8/9 G STP36NE06FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. 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