STP36NF06L

STB36NF06L, STP36NF06L Datasheet Automotive-grade N-channel 60 V, 32 mΩ typ., 30 A STripFET II Power MOSFET in a D²PAK and TO-220 packages Features TAB TAB 1 3 D2PAK TO-220 1 2 Order codes VDS RDS(on) max. ID STB36NF06LT4 60 V 40 mΩ 30 A STP36NF06L 60 V 40 mΩ 30 A 3 D(2, TAB) • • • • AEC-Q101 qualified Exceptional dv/dt capability 100% avalanche tested Low gate charge Applications • G(1) Switching applications Description S(3) AM01475v1_noZen This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status links STB36NF06L STP36NF06L Product summary Order code STB36NF06LT4 Marking B36NF06 Package D²PAK Packing Tape and reel Order code STP36NF06L Marking P36NF06L Package TO-220 Packing Tube DS3365 - Rev 4 - October 2022 For further information contact your local STMicroelectronics sales office. www.st.com STB36NF06L, STP36NF06L Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0 V) 60 V VDGR Drain-gate voltage (RGS = 20 kΩ) 60 V Gate-source voltage ±18 V Drain current (continuous) at TC = 25 °C 30 Drain current (continuous) at TC = 100 °C 21 IDM(1) Drain current (pulsed) 120 A PTOT Total power dissipation at TC = 25 °C 70 W 0.47 W/°C VGS ID Derating factor A dv/dt(2) Peak diode recovery voltage slope 10 V/ns EAS(3) Single-pulse avalanche energy 225 mJ Tstg TJ Storage temperature range Operating junction temperature range -55 to 175 °C °C 1. Pulse width limited by safe operating area. 2. ISD ≤ 30 A, di/dt ≤ 400 A/μs, VDD ≤ V(BR)DSS, TJ ≤ TJ max. 3. Starting TJ = 25 °C, ID = 15 A, VDD = 30 V. Table 2. Thermal data Symbol Value Unit RthJC Thermal resistance, junction-to-case 2.14 °C/W RthJA Thermal resistance, junction-to-ambient 62.5 °C/W Maximum lead temperature for soldering purpose 300 °C Tl DS3365 - Rev 4 Parameter page 2/17 STB36NF06L, STP36NF06L Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 3. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 250 μA Min. Typ. Max. 60 V VGS = 0 V, VDS = 60 V 1 VGS = 0 V, VDS = 60 V, TC = 125 °C 10 IDSS Zero gate voltage drain current IGSS Gate body leakage current VDS = 0 V, VGS = ±18 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance Unit 1.0 µA ±100 nA 2.5 V VGS = 10 V, ID = 15 A 32 40 VGS = 5 V, ID = 15 A 45 50 Min. Typ. Max. - 15 S - 660 pF - 170 pF - 70 pF - 13 - 4.2 nC - 7.8 nC Min. Typ. Max. Unit mΩ Table 4. Dynamic Symbol Parameter gfs Forward transconductance Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 15 V, ID = 15 A VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 30 V, ID = 30 A, VGS = 5 V (see Figure 13. Test circuit for gate charge behavior) 17 Unit nC Table 5. Switching times Symbol td(on) tr td(off) tf DS3365 - Rev 4 Parameter Test conditions Turn-on delay time VDD = 30 V, ID = 15 A, - 10 - ns Rise time RG = 4.7 Ω, VGS = 5 V - 80 - ns Turn-off delay time (see Figure 12. Test circuit for resistive load switching times and Figure 17. Switching time waveform) - 19 - ns - 13 - ns Fall time page 3/17 STB36NF06L, STP36NF06L Electrical characteristics Table 6. Source-drain diode Symbol ISD ISDM (1) VSD(2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 30 A Source-drain current (pulsed) - 120 A 1.5 V Forward on voltage ISD = 24 A, VGS = 0 V - trr Reverse recovery time ISD = 20 A, di/dt = 100 A/µs, - 55 ns Qrr Reverse recovery charge VDD = 20 V, TJ = 150 °C - 107 nC IRRM Reverse recovery current (see Figure 14. Test circuit for inductive load switching and diode recovery times) - 3.9 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. DS3365 - Rev 4 page 4/17 STB36NF06L, STP36NF06L Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area HV15530 Figure 3. Output characteristics HV15450 Figure 5. Trasconductance HV15460 DS3365 - Rev 4 Figure 2. Thermal impedance 280TOC Figure 4. Transfer characteristics HV15455 Figure 6. Static drain-source on-resistance HV15470 page 5/17 STB36NF06L, STP36NF06L Electrical characteristics (curves) Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations HV15490 HV15480 Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on-resistance vs temperature HV15510 HV15500 Figure 11. Normalized V(BR)DSS vs temperature HV15520 DS3365 - Rev 4 page 6/17 STB36NF06L, STP36NF06L Test circuits 3 Test circuits Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 14. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A A L 100 µH fast diode B B B G RG VD 3.3 µF D + Figure 15. Unclamped inductive load test circuit 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S _ D.U.T. Vi pulse width AM01470v1 AM01471v1 Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD VDD VGS 0 AM01472v1 DS3365 - Rev 4 10% 0 ID VDS 10% 90% 10% AM01473v1 page 7/17 STB36NF06L, STP36NF06L Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-220 type A package information Figure 18. TO-220 type A package outline 0015988_typeA_Rev_23 DS3365 - Rev 4 page 8/17 STB36NF06L, STP36NF06L TO-220 type A package information Table 7. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 Slug flatness DS3365 - Rev 4 Typ. 0.03 0.10 page 9/17 STB36NF06L, STP36NF06L D²PAK (TO-263) type A package information 4.2 D²PAK (TO-263) type A package information Figure 19. D²PAK (TO-263) type A package outline 0079457_26 DS3365 - Rev 4 page 10/17 STB36NF06L, STP36NF06L D²PAK (TO-263) type A package information Table 8. D²PAK (TO-263) type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.30 8.50 8.70 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 DS3365 - Rev 4 Typ. 0.40 0° 8° page 11/17 STB36NF06L, STP36NF06L D²PAK (TO-263) type A package information Figure 20. D²PAK (TO-263) recommended footprint (dimensions are in mm) 0079457_Rev26_footprint DS3365 - Rev 4 page 12/17 STB36NF06L, STP36NF06L D²PAK packing information 4.3 D²PAK packing information Figure 21. D²PAK tape outline DS3365 - Rev 4 page 13/17 STB36NF06L, STP36NF06L D²PAK packing information Figure 22. D²PAK reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 9. D²PAK tape and reel mechanical data Tape Dim. DS3365 - Rev 4 Reel mm mm Dim. Min. Max. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 330 13.2 26.4 30.4 page 14/17 STB36NF06L, STP36NF06L Revision history Table 10. Document revision history Date Version Changes 14-Jun-2003 1 First release. 13-Mar-2006 2 Complete version. 26-Jun-2006 3 New template, no content change. Updated title, Internal schematic, Device summary, Features and Description on cover page. 07-Oct-2022 4 Updated Section 4 Package information. Minor text changes. DS3365 - Rev 4 page 15/17 STB36NF06L, STP36NF06L Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.3 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 DS3365 - Rev 4 page 16/17 STB36NF06L, STP36NF06L IMPORTANT NOTICE – READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2022 STMicroelectronics – All rights reserved DS3365 - Rev 4 page 17/17