STB40N60M2, STP40N60M2,
STW40N60M2
N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2
Power MOSFETs in D2PAK, TO-220 and TO-247 packages
Datasheet − production data
Features
TAB
TAB
Order code
2
VDS @ TJmax
RDS(on) max
ID
650 V
0.088 Ω
34 A
STB40N60M2
3
1
D2PAK
1
2
3
STP40N60M2
STW40N60M2
TO-220
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
2
• Zener-protected
3
1
TO-247
Applications
Figure 1. Internal schematic diagram
• Switching applications
• LLC converters, resonant converters
'7$%
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering
them suitable for the most demanding high
efficiency converters.
*
6
AM01476v1
Table 1. Device summary
Order code
Marking
Packages
Packing
D2PAK
Tape and reel
STB40N60M2
STP40N60M2
40N60M2
TO-220
Tube
STW40N60M2
August 2016
This is information on a product in full production.
TO-247
DocID024932 Rev 4
1/21
www.st.com
Contents
STB40N60M2, STP40N60M2, STW40N60M2
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
.............................................. 9
4
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1
D2PAK (TO-263) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2
TO-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.3
TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21
DocID024932 Rev 4
STB40N60M2, STP40N60M2, STW40N60M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VGS
Parameter
Gate-source voltage
Value
Unit
± 25
V
ID
Drain current (continuous) at TC = 25 °C
34
A
ID
Drain current (continuous) at TC = 100 °C
22
A
IDM(1)
Drain current (pulsed)
136
A
PTOT
Total dissipation at TC = 25 °C
250
W
dv/dt
(2)
Peak diode recovery voltage slope
15
V/ns
dv/dt(3)
MOSFET dv/dt ruggedness
50
V/ns
Tstg
Storage temperature range
Tj
°C
- 55 to 150
Operating junction temperature range
°C
1. Pulse width limited by safe operating area.
2. ISD ≤ 34 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V.
3. VDS ≤ 480 V
Table 3. Thermal data
Value
Symbol
Parameter
D2PAK
Unit
TO-220
Rthj-case Thermal resistance junction-case
(1)
Rthj-pcb
Thermal resistance junction-pcb
Rthj-amb
Thermal resistance junction-ambient
TO-247
0.50
°C/W
30
°C/W
62.5
50
°C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax)
6
A
EAS
Single pulse avalanche energy
(starting Tj =25°C, ID = IAR; VDD= 50 V)
500
mJ
DocID024932 Rev 4
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21
Electrical characteristics
2
STB40N60M2, STP40N60M2, STW40N60M2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
IDSS
Zero gate voltage
drain current
IGSS
Gate-body leakage
current
Test conditions
VGS = 0, ID = 1 mA
Min.
Typ.
Max.
Unit
600
V
VGS = 0, VDS = 600 V
1
µA
VGS = 0, VDS = 600 V,
TC = 125 °C (1)
100
µA
VDS = 0, VGS = ± 25 V
±10
µA
3
4
V
0.078
0.088
Ω
Min.
Typ.
Max.
Unit
-
2500
-
pF
-
117
-
pF
-
2.4
-
pF
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
2
VGS = 10 V, ID = 17 A
1. Defined by design, not subject to production test
Table 6. Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Coss eq.(1)
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0
-
342
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz, ID = 0
-
4.4
-
Ω
Qg
Total gate charge
-
57
-
nC
Qgs
Gate-source charge
-
10
-
nC
Qgd
Gate-drain charge
VDD = 480 V, ID = 34 A,
VGS = 10 V
(see Figure 17)
-
25.5
-
nC
VDS = 100 V, f = 1 MHz,
VGS = 0
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/21
DocID024932 Rev 4
STB40N60M2, STP40N60M2, STW40N60M2
Electrical characteristics
Table 7. Switching times
Symbol
td(on)
Parameter
Test conditions
Turn-on delay time
VDD = 300 V, ID = 34 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16 and
Figure 21)
Rise time
tr
td(off)
tf
Turn-off-delay time
Fall time
Min.
Typ.
Max.
Unit
-
20.5
-
ns
-
13.5
-
ns
-
96
-
ns
-
11
-
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Source-drain current
-
34
A
ISDM
(1)
Source-drain current (pulsed)
-
136
A
VSD
(2)
Forward on voltage
ISD
trr
ISD = 34 A, VGS = 0
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 34 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 18)
ISD = 34 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 18)
-
1.6
V
-
440
ns
-
8.2
µC
-
37
A
-
568
ns
-
11.5
µC
-
40.5
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID024932 Rev 4
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21
Electrical characteristics
2.1
STB40N60M2, STP40N60M2, STW40N60M2
Electrical characteristics (curves)
Figure 2. Safe operating area for D2PAK and
TO-220
Figure 3. Thermal impedance D2PAK and
TO-220
AM16098v1
ID
(A)
100
s
ai
re n)
si a DS(o
th R
in ax
n
it o y m
b
a
er ed
Op mit
iL
10
10µs
100µs
1ms
10ms
1
Tj=150°C
Tc=25°C
Single pulse
0.1
0.1
10
1
100
VDS(V)
Figure 4. Safe operating area for TO-247
Figure 5. Thermal impedance for TO-247
AM16099v1
ID
(A)
100
)
on
D
S(
pe
ra
ite tio
d ni
by n
m this
ax a
R rea
is
10µs
1ms
Li
O
100µs
m
10
10ms
1
Tj=150°C
Tc=25°C
Single pulse
0.1
0.1
1
10
100
VDS(V)
Figure 6. Output characteristics
Figure 7. ransfer characteristics
AM16100v1
ID (A)
90
VGS=7, 8, 9, 10V
70
70
6V
60
60
50
50
40
40
30
30
5V
20
20
10
10
6/21
VDS=18V
80
80
0
AM16101v1
ID
(A)
4V
0
5
10
15
20
VDS(V)
DocID024932 Rev 4
0
0
2
4
6
8
10
VGS(V)
STB40N60M2, STP40N60M2, STW40N60M2
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
AM16102v1
VDS
VGS
(V)
12
(V)
VDD=480V
ID=34A
VDS
500
10
400
8
Figure 9. Static drain-source on-resistance
AM16103v1
RDS(on)
(Ω)
VGS=10V
0.082
0.081
0.080
300
0.079
6
200
0.078
4
0.077
2
100
0
0
Qg(nC)
0.076
0
10
20
30
40
50
60
Figure 10. Capacitance variations
0
4
8
12 16
20 24
28
ID(A)
Figure 11. Output capacitance stored energy
AM16104v1
C
(pF)
0.075
AM16105v1
Eoss
(µJ)
10000
15
Ciss
1000
10
100
Coss
5
10
Crss
1
0.1
1
10
100
Figure 12. Normalized gate threshold voltage vs
temperature
AM15718v1
VGS(th)
0
0
VDS(V)
(norm)
400
100 200 300
500 600
VDS(V)
Figure 13. Normalized on-resistance vs
temperature
AM15719v1
RDS(on)
(norm)
ID=17 A
1.1
ID=250µA
2.1
1.0
1.7
0.9
1.3
0.8
0.9
0.7
0.6
-50
0
50
100
TJ(°C)
DocID024932 Rev 4
0.5
-50
0
50
100
TJ(°C)
7/21
21
Electrical characteristics
STB40N60M2, STP40N60M2, STW40N60M2
Figure 14. Normalized V(BR)DSS vs temperature
AM15714v1
V(BR)DSS
(norm)
ID=1 mA
Figure 15. Source-drain diode forward vs
temperature
GIPD240920132025FSR
VSD
(V)
1.1
TJ= -50°C
1
1.06
0.9
TJ= 25°C
1.02
0.8
0.98
0.7
TJ= 150°C
0.94
0.6
0.9
-50
8/21
0
50
100
TJ(°C)
0.5
0
DocID024932 Rev 4
6
12
18
24
30
ISD(A)
STB40N60M2, STP40N60M2, STW40N60M2
3
Test circuits
Test circuits
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
2200
μF
VD
VGS
RG
100Ω
Vi=20V=VGMAX
VDD
D.U.T.
VG
2.7kΩ
D.U.T.
47kΩ
PW
1kΩ
PW
AM01469v1
AM01468v1
Figure 18. Test circuit for inductive load
switching and diode recovery times
Figure 19. Unclamped inductive load test circuit
L
A
A
A
VD
D
G
D.U.T.
FAST
DIODE
B
B
2200
μF
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
3.3
μF
VDD
ID
VDD
G
Vi
RG
D.U.T.
S
Pw
AM01471v1
AM01470v1
Figure 20. Unclamped inductive waveform
Figure 21. Switching time waveform
ton
9%5'66
tdon
9'
toff
tr
tdoff
tf
90%
90%
,'0
10%
,'
9''
10%
0
9''
VDS
90%
VGS
$0Y
0
DocID024932 Rev 4
10%
AM01473v1
9/21
21
Package information
4
STB40N60M2, STP40N60M2, STW40N60M2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/21
DocID024932 Rev 4
STB40N60M2, STP40N60M2, STW40N60M2
4.1
Package information
D2PAK (TO-263) package information
Figure 22. D²PAK (TO-263) type A package outline
B$BUHY
DocID024932 Rev 4
11/21
21
Package information
STB40N60M2, STP40N60M2, STW40N60M2
Table 9. D²PAK (TO-263) type A mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10.00
E1
8.50
8.70
8.90
E2
6.85
7.05
7.25
e
10.40
2.54
e1
4.88
5.28
H
15.00
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
12/21
Max.
0.4
0°
8°
DocID024932 Rev 4
STB40N60M2, STP40N60M2, STW40N60M2
Package information
Figure 23. D²PAK footprint(a)
)RRWSULQW
a. All dimension are in millimeters
DocID024932 Rev 4
13/21
21
Package information
4.2
STB40N60M2, STP40N60M2, STW40N60M2
TO-220 package information
Figure 24. TO-220 type A package outline
BW\SH$B5HYB
14/21
DocID024932 Rev 4
STB40N60M2, STP40N60M2, STW40N60M2
Package information
Table 10. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
DocID024932 Rev 4
15/21
21
Package information
4.3
STB40N60M2, STP40N60M2, STW40N60M2
TO-247 package information
Figure 25. TO-247 package outline
B+
16/21
DocID024932 Rev 4
STB40N60M2, STP40N60M2, STW40N60M2
Package information
Table 11. TO-247 package mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID024932 Rev 4
5.70
17/21
21
Packing information
5
STB40N60M2, STP40N60M2, STW40N60M2
Packing information
Figure 26. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
K0
For machine ref. only
including draft and
radii concentric around B0
W
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
18/21
DocID024932 Rev 4
STB40N60M2, STP40N60M2, STW40N60M2
Packing information
Figure 27. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
N
A
Full radius
G measured at hub
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Table 12. D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID024932 Rev 4
Min.
Max.
330
13.2
26.4
30.4
19/21
21
Revision history
6
STB40N60M2, STP40N60M2, STW40N60M2
Revision history
Table 13. Document revision history
Date
Revision
Changes
01-Jul-2013
1
First release.
23-Sep-2013
2
– Added: TO-220FP and I2PAKFP packages
– Inserted: VISO in Table 2
– Modified: values in Table 4, the entire typical values in Table 6, 7
and 8
– Updated: Section 4: Package mechanical data.
– Minor text changes
13-May-2014
3
– The part numbers STF40N60M2 and STFI40N60M2 have been
moved to a separate datasheet
– Minor text changes
Updated title, features and description in cover page.
09-Aug-2016
4
Updated Table 2: Absolute maximum ratings, Table 5: On /off states
and Table 8: Source drain diode.
Updated Section 4.1: D2PAK (TO-263) package information and
Section 4.2: TO-220 package information.
Minor text changes.
20/21
DocID024932 Rev 4
STB40N60M2, STP40N60M2, STW40N60M2
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DocID024932 Rev 4
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