STP45NE06

STP45NE06 STP45NE06FP ® N - CHANNEL 60V - 0.022Ω - 45A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS(on) ID STP45NE06 STP45NE06FP 60 V 60 V < 0.028 Ω < 0.028 Ω 45 A 25 A TYPICAL RDS(on) = 0.022 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION ■ ■ ■ ■ ■ 3 1 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 1 c u d TO-220 e t le ) s t( 2 TO-220FP o r P INTERNAL SCHEMATIC DIAGRAM o s b O - APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS ) s ( ct 3 2 u d o ABSOLUTE MAXIMUM RATINGS r P e Symbol V DGR bs O ID ID IDM (•) P tot 60 V Drain- gate Voltage (R GS = 20 kΩ) 60 V ± 20 Gate-source Voltage 45 25 A Drain Current (continuous) at T c = 100 o C 31 17.5 A 180 180 A Drain Current (pulsed) o Total Dissipation at T c = 25 C 100 35 W Derating Factor 0.67 0.23 W/ o C  2000 V dv/dt Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area June 1998 V Drain Current (continuous) at T c = 25 o C Insulation Withstand Voltage (DC) Tj Unit STP45NE06FP Drain-source Voltage (V GS = 0) V ISO T stg Value STP45NE06 t e l o V DS V GS Parameter 7 V/ns -65 to 175 o C 175 o C (1) ISD ≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/6 STP45NE06/FP THERMAL DATA R thj-case Thermal Resistance Junction-case R thj-amb R thc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-220 TO-220FP 1.5 4.28 Max 62.5 0.5 300 o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 25V) Max Value Unit 45 A 150 mJ Min. Typ. ) s t( 60 od ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating I GSS Gate-body Leakage Current (V DS = 0) Symbol Parameter (s) Gate Threshold Voltage V DS = VGS R DS(on) Static Drain-source On Resistance V GS = 10V DYNAMIC s b O g fs (∗) C iss C oss C rss o s b O - ct u d o ID = 250 µA r P e Parameter Pr Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D =22.5 A V GS = 0 V 1 10 µA µA ± 100 nA Typ. Max. Unit 2 3 4 V 0.022 0.028 Ω 45 Test Conditions Unit Min. I D = 22.5A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V t e l o Symbol e t le Test Conditions V GS(th) ID(on) T c = 125 o C V GS = ± 20 V ON (∗) 2/6 VGS = 0 uc Max. A Min. Typ. 15 30 2700 350 70 Max. Unit S 3600 480 100 pF pF pF STP45NE06/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions t d(on) tr Turn-on Time Rise Time V DD = 30 V R G =4.7 Ω Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 48 V Min. I D = 22.5 A V GS = 10 V I D = 45A V GS = 10 V Typ. Max. Unit 30 100 40 135 ns ns 60 18 17 80 nC nC nC Typ. Max. Unit 20 45 70 30 61 95 ns ns ns SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 48 V I D = 45 A R G =4.7 Ω V GS = 10 V SOURCE DRAIN DIODE Symbol Parameter Test Conditions I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 45 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 45 A V DD = 30 V t rr Q rr I RRM (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area ) s ( ct Min. r P e t le VGS = 0 di/dt = 100 A/µs o T j = 150 C b O - so uc Typ. od ) s t( Max. Unit 45 180 A A 1.5 V 70 ns 210 µC 6 A u d o r P e t e l o s b O 3/6 STP45NE06/FP TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 16.4 0.645 13.0 14.0 0.511 L5 2.65 2.95 0.104 L6 15.25 15.75 0.600 L7 6.2 6.6 0.244 L9 3.5 3.93 0.137 DIA. 3.75 3.85 D1 u d o so 0.620 0.260 0.154 0.147 b O - 0.151 L2 G G1 F1 r P e H2 C ) s ( ct e t le o r P 0.551 0.116 D A L4 t e l o c u d ) s t( E L2 F Dia. F2 s b O TYP. L5 L9 L7 L6 4/6 L4 P011C STP45NE06/FP TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 H 10 10.4 0.393 L2 16 28.6 30.6 1.126 L4 9.8 10.6 0.385 L6 15.9 16.4 0.626 L7 9 9.3 0.354 Ø 3 3.2 0.417 0.366 0.118 0.126 D E b O - 1.204 0.645 so L3 L6 L7 G G1 ¯ F2 H s b O t e l o o r P 0.409 F B r P e e t le F1 A ) s ( ct u d o c u d 0.630 L3 ) s t( 0.106 1 2 3 L2 L4 5/6 STP45NE06/FP c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 6/6