STP46N60M6

STP46N60M6 Datasheet N-channel 600 V, 68 mΩ typ., 36 A, MDmesh M6 Power MOSFET in a TO‑220 package Features TAB 1 2 3 TO-220 Order code VDS RDS(on) max. ID STP46N60M6 600 V 80 mΩ 36 A • • Reduced switching losses Lower RDS(on) per area vs previous generation • • • Low gate input resistance 100% avalanche tested Zener-protected D(2, TAB) Applications • • • G(1) S(3) AM01475V1 Switching applications LLC converters Boost PFC converters Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STP46N60M6 Product summary Order code STP46N60M6 Marking 46N60M6 Package TO-220 Packing Tube DS12394 - Rev 3 - November 2019 For further information contact your local STMicroelectronics sales office. www.st.com STP46N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at Tcase = 25 °C 36 Drain current (continuous) at Tcase = 100 °C 23 ID(1) Drain current (pulsed) 126 A PTOT Total power dissipation at Tcase = 25 °C 250 W dv/dt (2) Peak diode recovery voltage slope 15 dv/dt(3) MOSFET dv/dt ruggedness 100 Tstg Storage temperature range VGS ID Tj Parameter Operating junction temperature range A V/ns -55 to 150 °C Value Unit 1. Pulse width limited by safe operating area. 2. ISD ≤ 36 A, di/dt ≤ 400 A/μs, VDS(peak) < V(BR)DSS, VDD = 400 V 3. VDS ≤ 480 V Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 0.5 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W Value Unit 5.2 A 760 mJ Table 3. Avalanche characteristics Symbol IAR EAS DS12394 - Rev 3 Parameter Avalanche current, repetitive or non-repetitive (pulse width limited by TJmax) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) page 2/13 STP46N60M6 Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. 600 Zero gate voltage drain current IGSS 1 VGS = 0 V, VDS = 600 V, Tcase = 125 100 °C(1) Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 18 A Unit V VGS = 0 V, VDS = 600 V IDSS Max. µA ±5 µA 4 4.75 V 68 80 mΩ Min. Typ. Max. Unit - 2340 - - 147 - - 3.7 - 3.25 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V Reverse transfer capacitance (1) pF Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 339 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 1.6 - Ω Qg Total gate charge VDD = 480 V, ID = 36 A, - 53.5 - Qgs Gate-source charge VGS = 0 to 10 V - 15.5 - Gate-drain charge (see Figure 14. Test circuit for gate charge behavior) - 23.5 - Coss eq. Qgd nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS12394 - Rev 3 Parameter Test conditions Min. Typ. Max. Turn-on delay time VDD = 300 V, ID = 18 A, - 20 - Rise time RG = 4.7 Ω, VGS = 10 V - 15.5 - Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 48.4 - - 8.5 - Fall time Unit ns page 3/13 STP46N60M6 Electrical characteristics Table 7. Source-drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 36 A ISDM (1) Source-drain current (pulsed) - 126 A VSD (2) Forward on voltage ISD = 36 A, VGS = 0 V - 1.6 V trr Reverse recovery time ISD = 36 A, di/dt = 100 A/µs, - 267 ns Qrr Reverse recovery charge VDD = 60 V - 2.8 µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 20.8 A - 440 ns - 5.8 µC - 26.4 A IRRM trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 36 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 15. Test circuit for inductive load switching and diode recovery times) 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DS12394 - Rev 3 page 4/13 STP46N60M6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Maximum transient thermal impedance Figure 1. Safe operating area ID (A) Zthj-c (°C/W) GADG211120191204SOA IDM 0.3 0.4 duty = 0.5 10 2 tp =1µs ar D tp =1ms 10 0 10 1 ID (A) VDS (V) 10 2 10 -2 Single pulse VGS = 9, 10 V 10 -3 10 -6 VGS = 8 V 10 -4 10 -3 10 -2 10 -1 tp (s) Figure 4. Typical transfer characteristics GADG280120191025TCH VDS = 16 V 100 80 60 VGS = 7 V 60 40 40 20 VGS = 6 V 3 6 9 12 15 18 VDS (V) Figure 5. Typical gate charge characteristics 20 0 4 RDS(on) (mΩ) 12 74 10 72 8 70 300 6 68 200 4 66 100 2 64 GADG280120191025QVG VGS VDD = 480 V ID = 36 A 600 Qg 500 VDS Qgd Qgs 10 20 30 40 50 60 0 Qg (nC) 5 6 7 8 9 VGS (V) Figure 6. Typical drain-source on-resistance (V) VDS (V) 0 0 10 -5 120 80 400 RthJ-C = 0.5°C/W ID (A) GADG280120191024OCH 100 0 0 0.5 V(BR)DSS Figure 3. Typical output characteristics 120 0.1 tp =10ms Single pulse, TC =25°C TJ ≤150°C, VGS =10V 10 -1 10 -1 0.2 tp =100µs RDS(on) max. 10 0 10 -1 on ) ea tp =10µs S( O is per lim at ite ion d in by th R is 10 1 DS12394 - Rev 3 GADG211120191320ZTH 62 0 GADG280120191022RID VGS =10 V 6 12 18 24 30 36 ID (A) page 5/13 STP46N60M6 Electrical characteristics (curves) Figure 7. Typical capacitance characteristics C (pF) Figure 8. Normalized gate threshold vs temperature VGS(th) (norm.) GADG280120191024CVR GADG191220180856VTH 1.1 10 4 CISS 1.0 10 3 0.9 10 2 COSS f = 1 MHz 10 1 10 0 10 -1 10 0 CRSS 10 1 VDS (V) 10 2 Figure 9. Normalized on-resistance vs temperature RDS(on) (norm.) GADG191220180856RON 0.8 0.7 0.6 -75 2.0 1.05 0.95 0.5 0.90 -25 25 75 125 Tj (°C) Figure 11. Typical output capacitance stored energy EOSS (µJ) Tj (°C) GADG191220180856BDV ID = 1 mA 0.85 -75 -25 25 75 125 Tj (°C) Figure 12. Typical reverse diode forward characteristics VSD (V) GADG280120191023SDF 1.1 15 Tj = -50 °C 1.0 12 Tj = 25 °C 0.9 9 0.8 6 Tj = 150 °C 0.7 3 DS12394 - Rev 3 125 GIPD280120191305EOS 18 0 0 75 1.00 1.0 0.0 -75 25 V(BR)DSS (norm.) 1.10 VGS = 10 V -25 Figure 10. Normalized breakdown voltage vs temperature 2.5 1.5 ID = 250 µA 0.6 100 200 300 400 500 600 VDS (V) 0.5 0 6 12 18 24 30 36 ISD (A) page 6/13 STP46N60M6 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD RL RL 2200 + μF 3.3 μF VDD VD IG= CONST VGS + pulse width RG VGS D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v10 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A VD 100 µH fast diode B B B 3.3 µF D G + Figure 16. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS12394 - Rev 3 page 7/13 STP46N60M6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DS12394 - Rev 3 page 8/13 STP46N60M6 TO-220 type A package information 4.1 TO-220 package information Figure 19. TO-220 type A package outline 0015988_typeA_Rev_22 DS12394 - Rev 3 page 9/13 STP46N60M6 TO-220 type A package information Table 8. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 DS12394 - Rev 3 Typ. 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 page 10/13 STP46N60M6 Revision history Table 9. Document revision history Date Version 10-Jan-2018 1 Changes Initial release. Modified Table 1. Absolute maximum ratings, Table 2. Thermal data, Table 3. Avalanche characteristics, Table 4. On/off states, Table 5. Dynamic, 01-Feb-2019 2 Table 6. Switching times and Table 7. Source-drain diode. Modified Figure 14. Test circuit for gate charge behavior. Minor text changes. 22-Nov-2019 3 Updated Table 3. Avalanche characteristics, Table 5. Dynamic and Section 2.1 Electrical characteristics (curves). Minor text changes. DS12394 - Rev 3 page 11/13 STP46N60M6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 TO-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 DS12394 - Rev 3 page 12/13 STP46N60M6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS12394 - Rev 3 page 13/13