STP4NA100

STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA T YPE STP4NA100 s s s s s s s V DSS 1000 V R DS(on) I D(on) x R DS(on)max V GS = 1 0 V DYNAMIC Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance ReverseTransfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D = 2.1 A V GS = 0 Min. 2 Typ. 5.5 1650 127 31 Max. Unit S pF pF pF 2/5 STP4NA100 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 5 00 V ID = 2 .1 A R G = 4 .7 Ω V GS = 1 0 V V DD = 8 00 V V I D = 4.2 A VGS = 1 0 Min. Typ. 14 12 59 9.4 26.5 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 8 00 V I D = 4 .2 A R G = 4 7 Ω VGS = 1 0 V (see test circuit, figure 5) Min. Typ. 94 30 142 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol I SD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Time Reverse Charge Reverse Current I SD = 4 .2 A V GS = 0 1000 14 28 Recovery I SD = 4 .2 A di/dt = 100 A/ µ s o V DD = 1 00 V T j = 1 50 C Recovery (see circuit, figure 5) Recovery Test Conditions Min. Typ. Max. 4.2 16.8 1.6 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STP4NA100 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 F1 D G1 E Dia. L5 L7 L6 L4 P011C L9 4/5 F2 F G H2 STP4NA100 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 5/5