STP4NK80ZFP

STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-channel 800V - 3Ω - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH™ MOSFET General features Type STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 ■ ■ ■ ■ ■ VDSS (@Tjmax) 800 V 800 V 800 V 800 V RDS(on) < 3.5 Ω < 3.5 Ω < 3.5 Ω < 3.5 Ω ID 3A 3A 3A 3A 3 1 1 3 2 3 1 2 TO-220 TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility DPAK IPAK Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Order codes Part number STP4NK80Z STP4NK80ZFP STD4NK80ZT4 STD4NK80Z-1 Marking P4NK80Z P4NK80ZFP D4NK80Z D4NK80Z Package TO-220 TO-220FP DPAK IPAK Packaging Tube Tube Tape & reel Tube August 2006 Rev 8 1/18 www.st.com 18 Contents STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 4 5 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Electrical ratings 1 Electrical ratings Table 1. Symbol Absolute maximum ratings Parameter Value TO-220/DPAK/ IPAK TO-220FP V V 3 (1) 1.89 (1) 12 (1) 25 0.21 3000 4.5 2500 A A A W W/°C V V/ns V Unit VDS VGS ID ID IDM(2) PTOT Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor 3 1.89 12 80 0.64 800 ± 30 VESD(G-S) dv/dt (3) VISO TJ Tstg Gate source ESD (HBM-C=100pF, R=1.5KΩ) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc= 25°C) Operating junction temperature Storage temperature -55 to 150 °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤4A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Table 2. Symbol Thermal data Parameter TO-220 Thermal resistance junctioncase max Thermal resistance junctionambient max Maximum lead temperature for soldering purpose Value TO-220FP DPAK IPAK 1.56 100 300 °C/W °C/W °C Unit Rthj-case Rthj-a Tl 1.56 62.5 5 3/18 Electrical ratings STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Table 3. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Value 3 190 Unit A mJ Table 4. Symbol BVGSO Gate-source zener diode Parameter Test conditions Min. 30 Typ. Max. Unit V Gate-source breakdown voltage Igs=± 1mA (Open Drain) 1.1 Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/18 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Electrical characteristics 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating, Tc = 125°C Min. 800 1 50 ±10 Typ. Max. Unit V µA µA µA V Ω IDSS IGSS VGS(th) RDS(on) Gate body leakage current VGS = ± 20V (VGS = 0) Gate threshold voltage Static drain-source on resistance VDS = VGS, ID = 50µA VGS = 10V, ID = 1.5 A 3 3.75 3 4.5 3.5 Table 6. Symbol gfs (1) Ciss Coss Crss Cosseq(2). td(on) tr td(off) tf tr(Voff) tr tc Qg Qgs Qgd Dynamic Parameter Test conditions Min. Typ. 2.9 575 67 13 60 13 12 35 32 18 7.5 25 22.5 4.2 11.3 Max. Unit S pF pF pF pF ns ns ns ns ns ns ns nC nC nC Forward transconductance VDS =15V, ID = 1.5A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Off-voltage rise time Fall time Off-voltage rise time Fall time Cross-over time Total gate charge Gate-source charge Gate-drain charge VDS =25V, f=1 MHz, VGS=0 VGS=0, VDS =0V to 400V VDD=400 V, ID= 1.5 A, RG=4.7Ω, VGS=10V (see Figure 18) VDD=640 V, ID= 3 A, RG=4.7Ω, VGS=10V (see Figure 16) VDD=640V, ID = 3 A VGS =10V (see Figure 19) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 5/18 Electrical characteristics STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Table 7. Symbol ISD ISDM VSD (1) (2) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 3 A, VGS=0 ISD= 3 A, di/dt = 100A/µs, VDD=80 V, Tj=150°C (see Figure 20) 400 1520 7.6 Test conditions Min Typ. Max 3 12 1.6 Unit A A V ns µC A trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 6/18 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Electrical characteristics 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO220/DPAK/IPAK Figure 2. Thermal impedance for TO220/DPAK/IPAK Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 7/18 Electrical characteristics Figure 7. Transconductance STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Figure 8. Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Source-drain diode forward characteristics Figure 12. Normalized BVdss vs temperature 8/18 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Figure 13. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 14. Avalanche energy vs temperature Figure 15. Normalized on resistance vs temperature 9/18 Test circuit STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 3 Test circuit Figure 17. Unclamped Inductive waveform Figure 16. Unclamped Inductive load test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load switching and diode recovery times 10/18 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/18 Package mechanical data STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 12/18 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Package mechanical data TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 D F G1 H F2 L2 L5 E 123 L4 G 13/18 Package mechanical data STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 DPAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 5.1 6.4 4.7 2.28 4.4 9.35 1 2.8 0.8 0.6 0.2 0° 8° 0° 1 0.023 0.008 8° 4.6 10.1 0.173 0.368 0.039 0.110 0.031 0.039 6.6 0.252 0.185 0.090 0.181 0.397 TYP MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.200 0.260 TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 inch 0068772-F 14/18 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Package mechanical data TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H A C C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 15/18 Packaging mechanical data STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 16/18 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Revision history 6 Revision history Table 8. Date 30-Mar-2005 06-Sep-2005 21Jan-2006 16-Aug-2006 Revision history Revision 5 6 7 8 Preliminary version Final version Inserted ecopack indication New template, no content change Changes 17/18 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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