STP5NK100Z

STP5NK100Z - STF5NK100Z STW5NK100Z N-channel 1000V - 2.7Ω - 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH™ Power MOSFET General features Type STF5NK100Z STP5NK100Z STW5NK100Z ■ ■ ■ ■ ■ VDSS (@Tjmax) 1000 V 1000 V 1000 V RDS(on) < 3.7 Ω < 3.7 Ω < 3.7 Ω ID 3 3.5 A 3.5 A 3.5 A TO-220 1 2 TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility TO-247 Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Internal schematic diagram Applications ■ Switching application Order codes Part number STF5NK100Z STP5NK100Z STW5NK100Z Marking F5NK100Z P5NK100Z W5NK100Z Package TO-220FP TO-220 TO-247 Packaging Tube Tube Tube August 2006 Rev 4 1/16 www.st.com 16 Contents STP5NK100Z - STF5NK100Z - STW5NK100Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 4 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 STP5NK100Z - STF5NK100Z - STW5NK100Z Electrical ratings 1 Electrical ratings Table 1. Symbol Absolute maximum ratings Parameter Value TO-220/TO-247 TO-220FP V V 3.5 (1) 2.2 (1) 14 (1) 30 0.24 4000 4.5 2500 A A A W W/°C V V/ns V Unit VDS VGS ID ID IDM(2) PTOT Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor 3.5 2.2 14 125 1 1000 ± 30 VESD(G-S) dv/dt (3) VISO TJ Tstg Gate source ESD (HBM-C=100pF, R=1.5ΚΩ) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc= 25°C) Operating junction temperature Storage temperature -55 to 150 °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤3.5A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Table 2. Symbol Thermal data Parameter TO-220 TO-247 Value TO-220FP 4.2 62.5 300 °C/W °C/W °C Unit Rthj-case Rthj-a Tl Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 1 3/16 Electrical ratings STP5NK100Z - STF5NK100Z - STW5NK100Z Table 3. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Value 3.5 250 Unit A mJ Table 4. Symbol BVGSO Gate-source zener diode Parameter Gate-source breakdown voltage Test conditions Igs=± 1mA (open drain) Min. 30 Typ. Max. Unit V 1.1 Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/16 STP5NK100Z - STF5NK100Z - STW5NK100Z Electrical characteristics 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating, Tc = 125°C Min. 1000 1 50 ±10 Typ. Max. Unit V µA µA µA V Ω IDSS IGSS VGS(th) RDS(on) Gate body leakage current VGS = ± 20V (VGS = 0) Gate threshold voltage Static drain-source on resistance VDS = VGS, ID = 100µA VGS = 10V, ID = 1.75 A 3 3.75 2.7 4.5 3.7 Table 6. Symbol gfs (1) Ciss Coss Crss Cosseq(2). td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Test conditions Min. Typ. 4 1154 106 21.3 46.8 22.5 7.7 51.5 19 42 7.3 21.7 59 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC Forward transconductance VDS =15V, ID = 1.75A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Off-voltage rise time Fall time Total gate charge Gate-source charge Gate-drain charge VDS =25V, f=1 MHz, VGS=0 VGS=0, VDS =0V to 800V VDD=500 V, ID= 1.75 A, RG=4.7Ω, VGS=10V (see Figure 20) VDD=800V, ID = 3.5 A VGS =10V (see Figure 21) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 5/16 Electrical characteristics STP5NK100Z - STF5NK100Z - STW5NK100Z Table 7. Symbol ISD ISDM VSD (1) (2) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 3.5 A, VGS=0 ISD= 3.5 A, di/dt = 100A/µs, VDD=30 V (see Figure 22) ISD= 3.5 A, di/dt = 100A/µs, VDD=35 V, Tj=150°C (see Figure 22) 605 3.09 10.5 742 4.2 11.2 Test conditions Min Typ. Max 3.5 14 1.6 Unit A A V ns µC A ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 6/16 STP5NK100Z - STF5NK100Z - STW5NK100Z Electrical characteristics 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO-220FP Figure 2. Thermal impedance for TO-220FP Figure 3. Safe operating area for TO-220 Figure 4. Thermal impedance for TO-220 Figure 5. Safe operating area for TO-247 Figure 6. Thermal impedance for TO-247 7/16 Electrical characteristics Figure 7. Output characterisics STP5NK100Z - STF5NK100Z - STW5NK100Z Figure 8. Transfer characteristics Figure 9. Transconductance Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations 8/16 STP5NK100Z - STF5NK100Z - STW5NK100Z Figure 13. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 14. Normalized on resistance vs temperature Figure 15. Source-drain diode forward characteristics Figure 16. Normalized BVdss vs temperature Figure 17. Maximum avalanche energy vs temperature 9/16 Test circuit STP5NK100Z - STF5NK100Z - STW5NK100Z 3 Test circuit Figure 19. Unclamped Inductive waveform Figure 18. Unclamped Inductive load test circuit Figure 20. Switching times test circuit for resistive load Figure 21. Gate charge test circuit Figure 22. Test circuit for inductive load switching and diode recovery times 10/16 STP5NK100Z - STF5NK100Z - STW5NK100Z Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/16 Package mechanical data STP5NK100Z - STF5NK100Z - STW5NK100Z TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 12/16 G STP5NK100Z - STF5NK100Z - STW5NK100Z Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 13/16 Package mechanical data STP5NK100Z - STF5NK100Z - STW5NK100Z TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S 14/16 STP5NK100Z - STF5NK100Z - STW5NK100Z Revision history 5 Revision history Table 8. Date 12-Oct-2004 08-Sep-2005 16-Dec-2005 16-Aug-2006 Revision history Revision 1 2 3 4 First release Complete datasheet Inserted ecopack indication New template, no content change Changes 15/16 STP5NK100Z - STF5NK100Z - STW5NK100Z Please Read Carefully: Information in this document is provided solely in connection with ST products. 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