STP5NK60ZFP

N-CHANNEL 600V - 1.2Ω - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP5NK60Z STP5NK60ZFP STD5NK60Z s s s s s s STP5NK60Z - STP5NK60ZFP STD5NK60Z VDSS 600 V 600 V 600 V RDS(on) < 1.6 Ω < 1.6 Ω < 1.6 Ω ID 5A 5A 5A Pw 90 W 25 W 90 W 3 1 2 TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 1 DPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING ORDERING INFORMATION SALES TYPE STP5NK60Z STP5NK60ZFP STD5NK60ZT4 MARKING P5NK60Z P5NK60ZFP D5NK60 PACKAGE TO-220 TO-220FP DPAK PACKAGING TUBE TUBE TAPE & REEL September 2002 1/12 STP5NK60Z - STP5NK60ZFP ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP5NK60Z STD5NK60Z Value STP5NK60ZFP Unit VDS VDGR VGS ID ID IDM (l) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 5 3.16 20 90 0.72 600 600 ± 30 5 (*) 3.16 (*) 20 (*) 25 0.2 3000 4.5 2500 -55 to 150 -55 to 150 V V V A A A W W/°C V V/ns V °C °C (l) Pulse width limited by safe operating area (1) I SD ≤5A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 DPAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.39 62.5 300 TO-220FP 5 100 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 5 220 Unit A mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V (#) When mounted on minimum Footprint PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/12 STP5NK60Z - STP5NK60ZFP ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 30V VDS = VGS, ID = 50µA VGS = 10V, ID = 2.5 A 3 3.75 1.2 Min. 600 1 50 ±10 4.5 1.6 Typ. Max. Unit V µA µA µA V Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 8 V, ID = 2.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 4 690 90 20 40 Max. Unit S pF pF pF pF VGS = 0V, VDS = 0V to 480V SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Test Conditions VDD = 300 V, ID = 2.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) VDD = 400V, ID = 12 A, VGS = 10V Min. Typ. 16 25 26 6 20 34 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 300 V, ID = 2.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 5 A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 36 25 12 10 24 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, VGS = 0 ISD = 5 A, di/dt = 100A/µs VDD = 30V, Tj = 150°C (see test circuit, Figure 5) 485 2.7 11 Test Conditions Min. Typ. Max. 5 20 1.6 Unit A A V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/12 STP5NK60Z - STP5NK60ZFP Safe Operating Area For TO-220/DPAK Safe Operating Area For TO-220FP Thermal Impedance For TO-220/DPAK Thermal Impedance For TO-220FP Output Characteristics Transfer Characteristics 4/12 STP5NK60Z - STP5NK60ZFP Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/12 STP5NK60Z - STP5NK60ZFP Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature Maximum Avalanche Energy vs Temperature 6/12 STP5NK60Z - STP5NK60ZFP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/12 STP5NK60Z - STP5NK60ZFP TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 D F1 G1 E Dia. L5 L7 L6 L4 P011C L9 8/12 F2 F G H2 STP5NK60Z - STP5NK60ZFP TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.5 1.5 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 ¯ F1 F D G1 H F2 L2 L5 E 123 L4 G 9/12 STP5NK60Z - STP5NK60ZFP TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0 o DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8 o TYP. TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.8 0.024 0 o 0.039 0o P032P_B 10/12 STP5NK60Z - STP5NK60ZFP DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 * on sales type 11/12 STP5NK60Z - STP5NK60ZFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 12/12