STP5NK65ZFP

STP5NK65ZFP N-channel 650 V, 1.5 Ω, 4.5 A TO-220FP Zener-protected SuperMESH™ Power MOSFET Features Type VDSS RDS(on) max ID Pw STP5NK65ZFP 650 V < 1.8 Ω 4.5 A 25 W ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability ■ Improved ESD capability u d o 3 r P e Switching application 2 t e l o ) (s Description 1 TO-220FP Applications ■ ) s ( ct s b O Figure 1. Internal schematic diagram t c u The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products d o r P e t e l o s b O Table 1. Device summary Order codes Marking Package Packaging STP5NK65ZFP P5NK65ZFP TO-220FP Tube April 2009 Doc ID 15565 Rev 1 1/12 www.st.com 12 Electrical ratings 1 STP5NK65ZFP Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 650 V VGS Gate- source voltage ± 30 V (1) A A ID Drain current (continuous) at TC = 25 °C 4.5 ID Drain current (continuous) at TC = 100 °C 3.1 (1) IDM (2) PTOT Drain current (pulsed) 18 Total dissipation at TC = 25 °C 25 Derating factor 0.6 Gate source ESD (HBM-C=100 pF, R=1.5 kΩ) VESD(G-S) dv/dt (3) e t e ol VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tj Tstg Operating junction temperature Storage temperature ) (s s b O A ct du o r P 2000 Peak diode recovery voltage slope (s) (1) W W/°C V 4.5 V/ns 2500 V -55 to 150 V Value Unit 5 V 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area t c u 3. ISD ≤ 5.7 A, di/dt ≤ 200 A/µs, VDD =80% V(BR)DSS. Table 3. P e d o r Symbol t e l o bs O Parameter Rthj-case Thermal resistance junction-case Max Rthj-amb Thermal resistance junction-ambient Max 62.5 V Tl Maximum lead temperature for soldering purpose 300 A Table 4. 2/12 Absolute maximum ratings Absolute maximum ratings Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 4.2 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 170 mJ Doc ID 15565 Rev 1 STP5NK65ZFP 2 Electrical characteristics Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 5. On/off states Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Table 6. Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance gfs Ciss Coss Crss Coss eq. (2) Qg Qgs Qgd Min. Typ. Max. Unit 650 - - V VDS=max rating VDS=max rating @125 °C - - 1 50 µA µA VGS = ± 20 V - - ±10 VDS = VGS, ID = 50 µA 3 3.75 VGS = 10 V, ID = 2.1 A - ID =1 mA, VGS = 0 let Parameter Test conditions 1.5 (s) µA ct u d o r P e Dynamic Symbol (1) Test conditions 4.5 V 1.8 Ω Min. Typ. Max. Unit Forward transconductance VDS =10 V, ID = 2.1 A - 5 - S Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1MHz, VGS = 0 - 680 80 17 - pF pF pF VGS = 0, VDS = 0 to 480 V - 98 - pF VDD = 520 V, ID = 4.5 A, VGS = 10 V Figure 16 25 4.4 13.7 35 - nC nC nC o s b O ) s ( t c Equivalent output capacitance u d o Total gate charge Gate-source charge Gate-drain charge r P e 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. t e l o 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. s b O Table 7. Symbol Switching times Parameter Test conditions Min. Typ. td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 325 V, ID = 2.1 A, RG = 4.7 Ω, VGS = 10 V Figure 15 - 20 15 140 40 tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD = 325 V, ID = 2.1 A, RG = 4.7 Ω, VGS = 10 V Figure 15 - 12 7 15 Doc ID 15565 Rev 1 Max. Unit - ns ns ns ns - ns ns ns 3/12 Electrical characteristics Table 8. STP5NK65ZFP Symbol Source Drain Diode Parameter Test conditions Min. Typ. Max. Unit - - 4.5 18 A A ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward On voltage ISD = 4.5 A, VGS = 0 - - 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4.5 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C Figure 20 - 375 1.76 10 - ns nC A ISD trr Qrr IRRM ) s ( ct 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Table 9. r P e Gate-source Zener diode Symbol Parameter Test conditions Gate-source breakdown voltage BVGSO t e l o Igs=± 1mA (open drain) s b O u d o Min. 30 Typ. Max. Unit - - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. ) (s t c u d o r P e t e l o s b O 4/12 Doc ID 15565 Rev 1 STP5NK65ZFP Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM03326v1 ID (A) 10 ) 10µs 100µs D S( on O Li per m at ite io d ni by n m this ax a R rea is 1µs 1 ) s ( ct 1ms Tj=150°C Tc=25°C 0.1 10ms u d o Sinlge pulse 0.01 0.1 Figure 4. 10 1 100 r P e VDS(V) Output characteristics Figure 5. Transfer characteristics t e l o ) (s s b O t c u d o r t e l o P e Figure 6. Transconductance Figure 7. Static drain source on resistance s b O Doc ID 15565 Rev 1 5/12 Electrical characteristics Figure 8. STP5NK65ZFP Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Capacitance variations ) s ( ct u d o Figure 11. Normalized on resistance vs temperature r P e t e l o ) (s s b O t c u d o r P e Figure 12. Source-drain diode forward characteristics t e l o s b O Figure 13. Avalanche energy vs starting Tj AM03327v1 EAS (mJ) ID=4.2 A VDD=50 V 170 150 130 110 90 70 50 30 10 0 6/12 Doc ID 15565 Rev 1 20 40 60 80 100 120 140 TJ(°C) STP5NK65ZFP Electrical characteristics Figure 14. Normalized BVDSS vs temperature ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Doc ID 15565 Rev 1 7/12 Test circuits 3 STP5NK65ZFP Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. ) s ( t VG 2.7kΩ c u d PW 47kΩ 1kΩ PW D.U.T. AM01468v1 e t e ol o r P AM01469v1 Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B A D G S s ( t c 3.3 µF B 25 Ω D 1000 µF RG S r P e 2200 µF 3.3 µF VDD ID Vi D.U.T. Pw let AM01470v1 Figure 19. Unclamped inductive waveform b O L VD VDD u d o G so )- L=100µH s b O AM01471v1 Figure 20. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/12 0 Doc ID 15565 Rev 1 10% AM01473v1 STP5NK65ZFP 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Doc ID 15565 Rev 1 9/12 Package mechanical data STP5NK65ZFP TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 G 4.95 G1 2.4 H 10 ro 28.6 L4 9.8 L5 2.9 L6 15.9 9 u d o Pr A )- 30.6 s b O 10.6 3.6 16.4 9.3 3 3.2 L7 E B so b O 2.7 10.4 s ( t c L7 Dia 5.2 t e l o 16 L3 P e ) s ( ct du 1.5 L2 e t e l Max. D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_J 10/12 Doc ID 15565 Rev 1 STP5NK65ZFP 5 Revision history Revision history Table 10. Document revision history Date Revision 16-Apr-2009 1 Changes First issue ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Doc ID 15565 Rev 1 11/12 STP5NK65ZFP ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. r P e All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. t e l o No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. ) (s s b O UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. t c u UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. d o r P e t e l o Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. s b O ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 Doc ID 15565 Rev 1