STP5NK80Z

STP5NK80Z STP5NK80ZFP N-channel 800V - 1.9Ω - 4.3A - TO-220/TO-220FP Zener-protected SuperMESH™ Power MOSFET General features Type STP5NK80Z STP5NK80ZFP ■ ■ ■ ■ VDSS (@Tjmax) 800 V 800 V RDS(on) < 2.4 Ω < 2.4 Ω ID 4.3 A 4.3 A 3 1 2 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility TO-220 TO-220FP Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Internal schematic diagram Applications ■ Switching application Order codes Part number STP5NK80Z STP5NK80ZFP Marking P5NK80Z P5NK80ZFP Package TO-220 TO-220FP Packaging Tube Tube August 2006 Rev 4 1/15 www.st.com 15 Contents STP5NK80Z - STP5NK80ZFP Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 4 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/15 STP5NK80Z - STP5NK80ZFP Electrical ratings 1 Electrical ratings Table 1. Symbol Absolute maximum ratings Parameter TO-220 Value TO-220FP 800 ± 30 4.3 2.7 17.2 110 0.88 3500 4.5 2500 4.3 (1) 2.7 (1) 17.2 (1) 30 0.24 V V A A A W W/°C V V/ns V Unit VDS VGS ID ID IDM(2) PTOT Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor VESD(G-S) dv/dt (3) VISO TJ Tstg Gate source ESD (HBM-C=100pF, R=1.5ΚΩ) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc= 25°C) Operating junction temperature Storage temperature -55 to 150 °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤4.3A, di/dt ≤ 200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Table 2. Symbol Thermal data Parameter TO-220 Value TO-220FP 4.2 62.5 300 °C/W °C/W °C Unit Rthj-case Rthj-a Tl Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 1.14 3/15 Electrical ratings STP5NK80Z - STP5NK80ZFP Table 3. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Value 4.3 190 Unit A mJ Table 4. Symbol BVGSO Gate-source zener diode Parameter Test conditions Min. 30 Typ. Max. Unit V Gate-source breakdown voltage Igs=± 1mA (Open Drain) 1.1 Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/15 STP5NK80Z - STP5NK80ZFP Electrical characteristics 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating, Tc = 125°C Min. 800 1 50 ±10 Typ. Max. Unit V µA µA µA V Ω IDSS IGSS VGS(th) RDS(on) Gate body leakage current VGS = ± 20V (VGS = 0) Gate threshold voltage Static drain-source on resistance VDS = VGS, ID = 100µA VGS = 10V, ID = 2.15 A 3 3.75 1.9 4.5 2.4 Table 6. Symbol gfs (1) Ciss Coss Crss Cosseq(2). td(on) tr td(off) tr Qg Qgs Qgd td(Voff) tr Dynamic Parameter Test conditions Min. Typ. 4.25 910 98 20 40 18 25 45 30 32.4 5 18.5 22 10 32 45.5 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC ns ns ns Forward transconductance VDS =15V, ID = 2.15A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-on delay time fall time Total gate charge Gate-source charge Gate-drain charge Off-voltage rise time Fall time Cross-over time VDS =25V, f=1 MHz, VGS=0 VGS=0, VDS =0V to 400V VDD=400 V, ID= 2 A, RG=4.7Ω, VGS=10V (see Figure 18) VDD=640V, ID = 4.3A VGS =10V VDD=640 V, ID= 4.3 A, RG=4.7Ω, VGS=10V (see Figure 20) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 5/15 Electrical characteristics STP5NK80Z - STP5NK80ZFP Table 7. Symbol ISD ISDM VSD (1) (2) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 4.3 A, VGS=0 ISD= 4.3 A, di/dt = 100A/µs, VDD=40 V, Tj = 150°C (see Figure 20) 500 3 12 Test conditions Min Typ. Max 4.3 17.2 1.6 Unit A A V ns µC A trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 6/15 STP5NK80Z - STP5NK80ZFP Electrical characteristics 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220FP (HV11720) Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 7/15 Electrical characteristics Figure 7. Transconductance Figure 8. STP5NK80Z - STP5NK80ZFP Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on resistance vs temperature 8/15 STP5NK80Z - STP5NK80ZFP Figure 13. Source-drain diode forward characteristics Electrical characteristics Figure 14. Normalized BVdss vs temperature Figure 15. Avalanche energy vs temperature 9/15 Test circuit STP5NK80Z - STP5NK80ZFP 3 Test circuit Figure 17. Unclamped Inductive waveform Figure 16. Unclamped Inductive load test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load switching and diode recovery times 10/15 STP5NK80Z - STP5NK80ZFP Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/15 Package mechanical data STP5NK80Z - STP5NK80ZFP TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 D F G1 H F2 L2 L5 E 123 L4 12/15 G STP5NK80Z - STP5NK80ZFP Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 13/15 Revision history STP5NK80Z - STP5NK80ZFP 5 Revision history Table 8. Date 09-Sep-2004 06-Sep-2005 16-Aug-2006 Revision history Revision 2 3 4 Preliminary version Final version New template, no content change Changes 14/15 STP5NK80Z - STP5NK80ZFP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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