STP5NK90Z_06

STP5NK90Z STF5NK90Z N-channel 900V - 2Ω - 4.5A - TO-220/TO-220FP Zener - Protected SuperMESH™ MOSFET General features Type STP5NK90Z STF5NK90Z VDSS (@Tjmax) 900 V 900 V RDS(on) < 2.5 Ω ID 4.5 A PW 125W 30W 3 1 2 < 2.5 Ω 4.5 A(1) 1. Limited only by maximum temperature allowed ■ ■ ■ ■ ■ ■ Extremely high dv/dt capability Improved esd capability 100% avalanche rated Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility TO-220 TO-220FP Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( Order codes Part number STP5NK90Z STF5NK90Z Marking P5NK90Z F5NK90Z Package TO-220 TO-220FP Packaging Tube Tube August 2006 Rev 4 1/15 www.st.com 15 Contents STP5NK90Z - STF5NK90Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 4 5 Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( 2/15 STP5NK90Z - STF5NK90Z Electrical ratings 1 Electrical ratings Table 1. Symbol Absolute maximum ratings Parameter Value STP5NK90Z STF5NK90Z V V V 4.5 (2) 2.8 (2) 18 (2) 30 0.24 A A Unit VDS VDGR VGS ID ID IDM (1) PTOT Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20KΩ) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating Factor Gate source ESD (HBM-C=100pF, R=1.5KΩ) Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature 4.5 2.8 18 125 1 900 900 ± 30 VESD (G-S) dv/dt (3) VISO TJ Tstg 1. Pulse width limited by safe operation area 2. Limited only by maximum temperature allowed 3. ISD ≤4.5 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX Table 2. Symbol Rthj-case Thermal data bs O let o Rthj-a Tl ro P e Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose du (s) ct so Ob - eP let - od r 4.5 4000 uc s) t( V V A W W/°C V/ns 2500 -55 to 150 -55 to 150 °C °C Value Unit TO-220 1 62.5 300 TO-220FP 4.2 °C/W °C/W °C Parameter Table 3. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Max Value 4.5 230 Unit A mJ 3/15 Electrical ratings STP5NK90Z - STF5NK90Z Table 4. Symbol BVGSO Gate-source zener diode Parameter Gate-Source breakdown voltage Test conditions Igs=±1mA (Open drain) Min 30 Typ. Max Unit V 1.1 Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( 4/15 STP5NK90Z - STF5NK90Z Electrical characteristics 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating, Tc=125°C Min. 900 1 50 ±10 Typ. Max. Unit V µA µA µA V Ω Gate body leakage current VGS = ± 20V (VGS = 0) Gate threshold voltage Static drain-source on resistance VDS = VGS, ID = 100µA VGS = 10 V, ID = 2.25 A 3 3.75 2 4.5 2.5 Table 6. Symbol gfs (1) Ciss Coss Crss Cosseq(2). td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Test conditions Forward transconductance VDS =15V, ID = 2.25A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance O bs let o 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS ro P e Turn-on delay time Rise time Off-voltage rise time Fall time Total gate charge Gate-source charge Gate-drain charge uc d (s) t so Ob - VDS =25V, f=1 MHz, VGS=0 te le ro P Min. Typ. 4.8 uc d s) t( Max. Unit S pF pF pF pF ns ns ns ns nC nC nC 1160 105 21.5 65.5 27 7.2 52 19 41.5 69 21.9 VGS=0, VDS =0V to 720V VDD=400 V, ID= 2.2 A, RG=4.7Ω, VGS=10V (see Figure 19) VDD=720V, ID = 4.4A VGS =10V (see Figure 18) 5/15 Electrical characteristics STP5NK90Z - STF5NK90Z Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4.5A, VGS=0 ISD = 4.5 A, di/dt = 100 A/µs VDD = 35 V (see Figure 18) ISD = 4.5 A, di/dt = 100 A/µs VDD = 35 V, Tj = 150 °C (see Figure 18) 635 5.9 18.5 712 4.66 13.1 Test conditions Min Typ. Max 4.5 18 1.6 Unit A A V ns µC A ns µC A 1. Pulse width limited by safe operating area bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( 6/15 STP5NK90Z - STF5NK90Z Electrical characteristics 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO 220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( 7/15 Electrical characteristics Figure 5. Output characterisics Figure 6. STP5NK90Z - STF5NK90Z Transfer characteristics Figure 7. Transconductance Figure 8. Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( 8/15 STP5NK90Z - STF5NK90Z Figure 11. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 12. Normalized on resistance vs temperature Figure 13. Source-drain diode forward characteristics Figure 14. Avalanche Energy vs starting Tj Figure 15. Normalized breakdown voltage vs temperature bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( 9/15 Test circuit Package mechanical data STP5NK90Z - STF5NK90Z 3 Test circuit Package mechanical data Figure 17. Unclamped inductive wafeform Figure 16. Unclamped inductive load test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load switching and diode recovery times bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( 10/15 STP5NK90Z - STF5NK90Z Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( 11/15 Package mechanical data STP5NK90Z - STF5NK90Z TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø bs O let o Pr e du o H G1 (s) ct so Ob L3 L6 L7 eP let 0.118 od r E uc s) t( 1.204 0.417 0.141 0.645 0.366 0.126 A B F1 D F F2 L2 L5 123 L4 12/15 G STP5NK90Z - STF5NK90Z Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 øP Q bs O let o Pr e du o (s) ct so Ob - eP let od r uc s) t( 0.151 0.116 0.154 13/15 Revision history STP5NK90Z - STF5NK90Z 5 Revision history Table 8. Date 06-Oct-2004 08-Sep-2005 14-Dec-2005 31-Jul-2005 Revision history Revision 1 2 3 4 First release Complete datasheet Inserted Ecopack indication New template, no content change Changes bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( 14/15 STP5NK90Z - STF5NK90Z Please Read Carefully: Information in this document is provided solely in connection with ST products. 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