STP75NF68

STP75NF68 N-channel 68 V, 0.010 Ω, 80 A, TO-220 STripFET™ II Power MOSFET Features Type STP75NF68 ■ ■ VDSS 68 V RDS(on) max < 0.014 Ω ID 80 A Exceptional dv/dt capability 100% avalanche tested 1 3 2 Application ■ TO-220 Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable in advanced high-efficiency switching applications. Figure 1. Internal schematic diagram Table 1. Device summary Marking 75NF68 Package TO-220 Packaging Tube Order code STP75NF68 August 2008 Rev 2 1/12 www.st.com 12 Contents STP75NF68 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/12 STP75NF68 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC=100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 68 ± 20 80 56 320 190 1.27 13 700 -55 to 175 175 Unit V V A A A W W/°C V/ns mJ °C °C PTOT dv/dt (2) Peak diode recovery voltage slope EAS (3) Single pulse avalanche energy Storage temperature Operating junction temperature Tstg TJ 1. Pulse width limited by safe operating area 2. ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX 3. Starting TJ = 25 oC, ID = 40 A, VDD = 34 V Table 3. Symbol Rthj-case Rthj-amb Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose(1) Value 0.79 62.5 300 Unit °C/W °C/W °C 1. 1.6mm from case for 10 sec 3/12 Electrical characteristics STP75NF68 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 µA, VGS= 0 VDS = Max rating, VDS = Max rating @125 °C VGS = ±20 V VDS= VGS, ID = 250 µA VGS= 10 V, ID= 40 A 2 3 0.010 Min. 68 1 10 ±100 4 0.014 Typ. Max. Unit V µA µA nA V Ω Table 5. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15 V, ID = 40 A VDS =25 V, f = 1 MHz, VGS = 0 Min. Typ. 60 2550 550 175 75 17 30 Max. Unit S pF pF pF nC nC nC VDD = 34 V, ID = 80 A VGS =10 V 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/12 STP75NF68 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= 34 V, ID= 40 A, RG=4.7 Ω, VGS=10 V Figure 13 on page 8 Min. Typ. 17 60 90 75 Max. Unit ns ns ns ns Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, VGS = 0 ISD = 80 A, di/dt = 100 A/µs, VDD = 25 V, TJ = 150 °C Figure 15 on page 8 70 160 4.7 Test conditions Min Typ. Max 80 320 1.5 Unit A A V ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/12 Electrical characteristics STP75NF68 2.1 Figure 2. ID (A) Electrical characteristics (curves) Safe operating area AM00935v1 Figure 3. Thermal impedance Operation in this area is limited by max RDS(on) 100 100µs 10 1ms 10ms 1 0.1 0.1 1 10 VDS(V) Figure 4. ID (A) 250 200 150 100 50 Output characteristics AM00936v1 VGS=10V 8V 7V Figure 5. ID (A) 250 200 150 6V Transfer characteristics AM00937v1 VDS=15V 100 50 5V 0 0 5 10 15 VDS(V) 0 0 1 2 3 4 5 6 7 VGS(V) Figure 6. Normalized BVDSS vs temperature AM00957v1 Figure 7. RDS(on) (Ω) 10.5 10 Static drain-source on resistance AM00951v1 VBR(DSS) (norm) 1.2 VGS=0 ID=250µA 1.1 9.5 1.0 9 0.9 8.5 8 -50 0 50 100 TJ(°C) 0 0.8 20 40 60 80 ID(A) 6/12 STP75NF68 Figure 8. VGS (V) 12 10 4000 8 3000 6 4 2 0 80 2000 Crss 1000 VDD=34V ID=80A Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM00952v1 Capacitance variations AM00953v1 C(pF) TJ=25°C 5000 f=1MHz Ciss Coss 20 40 60 Qg(nC) 0 0 10 20 30 40 50 60 Qg(nC) 0 Figure 10. Normalized gate threshold voltage vs temperature AM00954v1 Figure 11. Normalized on resistance vs temperature AM00955v1 VGS(th) (norm) 1.0 VDS=VGS ID=250µA RDS(on) (norm) 1.8 VGS=10V ID=40A 0.9 1.4 0.8 1.0 0.7 0.6 0.6 -50 0 50 100 TJ(°C) 0.2 -50 0 50 100 TJ(°C) Figure 12. Source-drain diode forward characteristics AM00956v1 VSD (V) 1.1 TJ=-55°C 0.9 0.7 25°C 0.5 175°C 0.3 0 20 40 60 80 ISD(A) 7/12 Test circuits STP75NF68 3 Test circuits Figure 14. Gate charge test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/12 STP75NF68 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STP75NF68 TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 10/12 STP75NF68 Revision history 5 Revision history Table 8. Date 24-Jul-2008 06-Aug-2008 Document revision history Revision 1 2 First release Document status promoted from preliminary data to datasheet Changes 11/12 STP75NF68 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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