STP77N6F6

STP77N6F6 N-channel 60 V, 0.0063 Ω typ., 77 A STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet − production data Features TAB Order code VDS RDS(on) max ID PTOT STP77N6F6 60 V 0.007 Ω 77 A 80 W • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) 3 1 • High avalanche ruggedness 2 • Low gate drive power losses TO-220 • Very low switching gate charge Applications Figure 1. Internal schematic diagram • Switching applications Description '7$% This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. * 6 $0Y Table 1. Device summary Order code Marking Package Packaging STP77N6F6 77N6F6 TO-220 Tube May 2013 This is information on a product in full production. DocID024067 Rev 2 1/13 www.st.com 13 Contents STP77N6F6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 DocID024067 Rev 2 STP77N6F6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V Drain current (continuous) at Tc = 25 °C 77 A Drain current (continuous) at Tc = 100 °C 55 A Drain current (pulsed) 308 A Total dissipation at Tc = 25 °C 80 W -55 to 175 °C Value Unit ID (1) ID(1) IDM(2) P Parameter TOT (1) TJ Pstg Operating junction temperature storage temperature 1. This value is rated according to Rthj-c 2. Pulse width is limited by safe operating area Table 3. Thermal data Symbol Rthj-c Rthj-a (1) Parameter Thermal resistance junction-case 1.88 Thermal resistance junction-ambient 62.5 °C/W 1. When mounted on FR-4 board of 1 inch², 2 oz Cu, t < 10 sec Table 4. Avalanche characteristics Symbol Parameter Value Unit IAV Avalanche current, repetitive or not-repetitive (pulse width limited by maximum junction temperature) 38.5 A EAS Single pulse avalanche energy (TJ = 25 °C, ID = IAV, VDD = 43 V) 152 mJ DocID024067 Rev 2 3/13 Electrical characteristics 2 STP77N6F6 Electrical characteristics (TJ= 25 °C unless otherwise specified) Table 5. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS = 0 Min. Typ. Max. 60 Unit V VDS = 60 V, VGS = 0 10 µA VDS = 60 V, VGS= 0, TJ=125 °C 100 µA ± 100 nA 4 V 0.0063 0.007 Ω Min. Typ. Max. Unit - 4295 - pF - 292 - pF - 190 - pF - 70.5 - nC - 19.7 - nC - 16.2 - nC - 2.2 - Ω Min. Typ. Max. Unit - 22 - ns - 42 - ns - 73 - ns - 16 - ns IDSS Zero gate voltage Drain current IGSS Gate-body leakage current VGS = ± 20 V, VDS = 0 VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS = 10 V, ID = 38.5 A 2 Table 6. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 30 V, ID = 77 A, VGS = 10 V Qgs Gate-source charge Qgd Gate-drain charge Rg Intrinsic gate resistance f = 1 MHz open drain Table 7. Switching times Symbol td(on) tr td(off) tf 4/13 Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time VDD = 30 V, ID = 77 A RG = 4.7 Ω VGS = 10 V Fall time DocID024067 Rev 2 STP77N6F6 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 77 A ISDM (1) Source-drain current (pulsed) - 308 A VSD (2) Forward on voltage ISD = 77 A, VGS = 0 - 1.3 V trr Reverse recovery time - 49 ns Qrr Reverse recovery charge - 8.5 nC IRRM Reverse recovery current ISD = 77 A, VDD = 48 V di/dt = 100 A/µs, Tj = 25 °C - 0.3 A ISD 1. Pulse width is limited by safe operating area 2. Pulse test: pulse duration = 300 µs, duty cycle 1.5% DocID024067 Rev 2 5/13 Electrical characteristics 2.1 STP77N6F6 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM15844v1 ID (A) s ai are ) is S(on h D t in ax R ion m rat by e d Op ite Lim 100 100µs 10 1ms 10ms Tj=175°C Tc=25°C Single pulse 1 0.1 10 1 0.1 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics AM15845v1 ID (A) AM15846v1 ID (A) VGS=7, 8, 9, 10, 11V 300 VDS=5 V 300 6V 250 250 200 200 150 150 5V 100 100 50 50 4V 0 4 2 0 Figure 6. Gate charge vs gate-source voltage AM15847v1 VGS (V) VDD=30V ID=77A 12 0 6 VDS(V) 2 3 4 5 6 7 8 9 10 VGS(V) Figure 7. Static drain-source on-resistance AM15848v1 RDS(on) (mΩ) 14.0 VGS=10V 12.0 10 10.0 8 8.0 6 6.0 4 4.0 2 2.0 0.0 0 0 6/13 20 40 60 80 Qg(nC) DocID024067 Rev 2 0 20 40 60 ID(A) STP77N6F6 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs. temperature AM15849v1 C (pF) AM15850v1 VGS(th) (norm) 1.2 ID=250µA Ciss 1 0.8 1000 0.6 0.4 Coss Crss 100 0.1 10 1 0 -50 -25 VDS(V) Figure 10. Normalized on-resistance vs. temperature AM15851v1 RDS(on) (norm) 0.2 VGS=10V ID=38.5 A 0 25 50 75 100 125 TJ(°C) Figure 11. Drain-source diode forward characteristics AM15852v1 VSD (V) 1 2 TJ=-50°C 0.9 1.5 TJ=25°C 0.8 1 0.7 TJ=150°C 0.5 0 -50 -25 0.6 0.5 0 25 75 100 125 150 TJ(°C) 0 10 20 30 40 50 60 ISD(A) Figure 12. Normalized VDS vs. temperature AM15853v1 VDS (norm) ID=250µA 1.1 1.05 1 0.95 0.9 -50 -25 0 25 50 75 100 125 TJ(°C) DocID024067 Rev 2 7/13 Test circuits 3 STP77N6F6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A D.U.T. FAST DIODE B B AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 DocID024067 Rev 2 10% AM01473v1 STP77N6F6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID024067 Rev 2 9/13 Package mechanical data STP77N6F6 Table 9. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 10/13 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID024067 Rev 2 STP77N6F6 Package mechanical data Figure 19. TO-220 type A drawing 0015988_typeA_Rev_S DocID024067 Rev 2 11/13 Revision history 5 STP77N6F6 Revision history Table 10. Document revision history Date Revision 12-Dec-2012 1 First release. 2 – Updated: values in Table 4, the entire values in Table 6, 7, VDD and TJ values in Table 8, typical values for trr, Qrr, IRRM in Table 8 – Added: VSD max value in Table 8 – Added: Section 2.1: Electrical characteristics (curves) – Minor text changes 23-May-2013 12/13 Changes DocID024067 Rev 2 STP77N6F6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com DocID024067 Rev 2 13/13