STP78N75F4

STD78N75F4 STP78N75F4 N-channel 75 V, 0.0092 Ω, 78 A TO-220, DPAK STripFET™ DeepGATE™ Power MOSFET Features ■ Type VDSS RDS(on) max ID STD78N75F4 75 V < 0.011 Ω 70 A STP78N75F4 75 V < 0.011 Ω 78 A 3 N-channel enhancement mode ■ 100% avalanched rated ■ Low gate charge ■ Very low on-resistance 3 1 1 DPAK 2 TO-220 Application ■ Switching applications Figure 1. Internal schematic diagram Description $ This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances. ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STD78N75F4 78N75F4 DPAK Tape and reel STP78N75F4 78N75F4 TO-220 Tube November 2009 Doc ID 15682 Rev 2 1/14 www.st.com 14 Contents STD78N75F4, STP78N75F4 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 ................................................ 8 Doc ID 15682 Rev 2 STD78N75F4, STP78N75F4 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage DPAK 75 V ± 20 V ID Drain current (continuous) at TC = 25 °C 78 70 A ID Drain current (continuous) at TC = 100 °C 55 50 A Drain current (pulsed) 312 280 A Total dissipation at TC = 25 °C 150 125 W 1 0.83 W/°C IDM (1) PTOT Derating factor EAS (2) Tstg Single pulse avalanche energy 185 mJ – 55 to 175 °C Storage temperature Operating junction temperature Tj 1. Pulse width limited by safe operating area 2. Starting Tj = 25 °C, ID= 35 A, VDD= 50 V Table 3. Thermal data Value Symbol Rthj-case Rthj-a Rthj-pcb Tl (1) Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Unit TO-220 DPAK 1 1.2 62.5 Thermal resistance junction-pcb max Maximum lead temperature for soldering purpose °C/W 50 300 °C/W °C/W °C 1. When mounted on FR-4 board of 1 inch², 2 oz Cu Doc ID 15682 Rev 2 3/14 Electrical characteristics 2 STD78N75F4, STP78N75F4 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol Parameter V(BR)DSS Drain-source Breakdown voltage Test conditions ID = 250 µA, VGS = 0 Symbol Max. 75 Unit V VDS = max rating VDS = max rating,TC=125 °C 100 µA Gate-body leakage current (VDS = 0) VGS = ± 20 V 100 nA Gate threshold voltage VDS = VGS, ID = 250 µA 4 V 0.0092 0.011 Ω Typ. Max. Unit IGSS Table 5. Typ. µA Zero gate voltage Drain current (VGS = 0) RDS(on) Min. 1 IDSS VGS(th) 4/14 On/off states Static drain-source on resistance 2 For DPAK VGS = 10 V, ID = 35 A For TO-220 VGS = 10 V, ID = 39 A Dynamic Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions Min. 5015 VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 37.5 V, ID = 78 A, VGS = 10 V (see Figure 14) Doc ID 15682 Rev 2 - - 382 pF - pF 218 pF 76 nC 23 18.5 - nC nC STD78N75F4, STP78N75F4 Table 6. Symbol Electrical characteristics Switching times Parameter td(on) tr Turn-on delay time Rise time td(off) tf Turn-off-delay time Fall time Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Test conditions VDD = 37.5 V, ID = 39 A RG = 4.7 Ω VGS = 10 V (see Figure 13) Min. Typ. Max. Unit - 25 33 - ns ns - 61 14 - ns ns Min. Typ. Source drain diode Parameter Test conditions Max Unit TO-220 - 78 A DPAK - 70 A TO-220 - 312 A DPAK - 280 A - 1.5 V Source-drain current Source-drain current (pulsed) For TO-220 ISD = 78 A, VGS = 0 Forward on voltage For DPAK ISD = 70 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 78 A, VDD = 60 V di/dt = 100 A/µs, Tj = 150 °C (see Figure 15) - 67 183 5.5 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 15682 Rev 2 5/14 Electrical characteristics STD78N75F4, STP78N75F4 2.1 Electrical characteristics (curves) Figure 2. Safe operating area )$ !  Figure 3. Thermal impedance Figure 5. Transfer characteristics !-V /PERATIONINTHISAREAIS ,IMITEDBYMAX2$3ON  —S MS 4J # 4C #  MS 3INLGE PULSE     Figure 4. 6$36 Output characteristics )$ ! !-V 6'36 !-V )$ !   6$36  6     6    6   Figure 6.   6$36  Normalized BVDSS vs temperature !-V "6$33 NORM     Figure 7.    6'36 Static drain-source on resistance !-V 2$3ON M/HM   6'36  )$—!           6/14     4* # Doc ID 15682 Rev 2      )$! STD78N75F4, STP78N75F4 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. !-V 6'3 6 6$$6  Capacitance variations !-V # P&  )$!             #ISS #RSS       1GN# Figure 10. Normalized on resistance vs temperature    6$36 Figure 11. Normalized gate threshold voltage vs temperature !-V 2$3ON NORM #OSS !-V 6'3TH NORM                 4* #       4* # Figure 12. Source-drain diode forward characteristics !-V 63$ 6  4*  #  4* #   4* #       )3$! Doc ID 15682 Rev 2 7/14 Test circuits 3 STD78N75F4, STP78N75F4 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/14 0 Doc ID 15682 Rev 2 10% AM01473v1 STD78N75F4, STP78N75F4 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 15682 Rev 2 9/14 Package mechanical data STD78N75F4, STP78N75F4 TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 10/14 Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 Doc ID 15682 Rev 2 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.147 0.104 0.151 0.116 STD78N75F4, STP78N75F4 Package mechanical data TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G Doc ID 15682 Rev 2 11/14 Packaging mechanical data 5 STD78N75F4, STP78N75F4 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 12/14 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 R 40 W 15.7 0.075 0.082 1.574 16.3 0.618 0.641 Doc ID 15682 Rev 2 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD78N75F4, STP78N75F4 6 Revision history Revision history Table 8. Document revision history Date Revision Changes 12-May-2009 1 First release. 26-Nov-2009 2 Document status promoted from preliminary data to datasheet (see Section 2.1: Electrical characteristics (curves)). Doc ID 15682 Rev 2 13/14 STD78N75F4, STP78N75F4 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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