STP7NE10L

® STP7NE10L N - CHANNEL 100V - 0.3 Ω - 7A - TO-220 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STP7NE10L s s s s s V DSS 100 V R DS(on) < 0.4 Ω ID 7A TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 1 3 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique " Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL (DISK DRIVES,etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR VGS ID ID I DM ( • ) P tot dv/dt(1 ) T st g Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 2 0 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 2 5 C Drain Current (continuous) at T c = 1 00 o C Drain Current (pulsed) Total Dissipation at T c = 2 5 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 100 100 ± 20 7 4.9 28 45 0.3 6 -65 to 150 175 (1) ISD ≤7 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C 1/5 (•) Pulse width limited by safe operating area October 1999 STP7NE10L THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 3.33 100 1.5 275 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j m ax) Single Pulse Avalanche Energy (starting T j = 2 5 o C, I D = I AR , V DD = 3 0 V) Max Value 7 40 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 2 50 µ A V GS = 0 Min. 100 1 10 ± 1 00 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = M ax Rating Drain Current (V GS = 0 ) V DS = M ax Rating Gate-body Leakage Current (V DS = 0 ) V GS = ± 2 0 V T c = 1 00 o C ON (∗) Symbol V GS(th) R DS(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance Test Conditions I D = 2 50 µ A Min. 1 Typ. 1.7 0.3 0.35 7 Max. 2.5 0.4 0.45 Unit V Ω Ω A V GS = 1 0 V I D = 3 .5 A V GS = 5 V I D = 3 .5 A I D(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 1 0 V DYNAMIC Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 2 5 V f = 1 MHz I D = 2.5 A V GS = 0 Min. 2 345 45 20 450 60 25 Typ. Max. Unit S pF pF pF 2/5 ® STP7NE10L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 5 0 V R G = 4 .7 Ω V DD = 8 0 V ID = 5 A I D = 2.5 A V GS = 5 V V GS = 5 V Min. Typ. 7 17 10 5 4 Max. 9 22 14 Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD=80V R G = 4 .7 Ω I D =5 A V GS = 1 0 V Min. Typ. 8 8 19 Max. 10 12 25 Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 8 A I SD = 5 A V DD = 3 0 V V GS = 0 d i/dt = 100 A/ µ s T j = 150 o C 75 190 5 Test Conditions Min. Typ. Max. 7 28 1.5 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area ® 3/5 STP7NE10L TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 F1 D G1 E Dia. L5 L7 L6 L4 P011C L9 4/5 F2 F G H2 ® STP7NE10L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . ® 5/5