STP7NK30Z

STP7NK30Z STF7NK30Z N-CHANNEL 300V - 0.80Ω - 5A TO-220/TO-220FP Zener-Protected SuperMESH™MOSFET Table 1: General Features TYPE STP7NK30Z STF7NK30Z s s s s s s Figure 1: Package ID 5A 5A Pw 50 W 20 W VDSS 300 V 300 V RDS(on) < 0.9 Ω < 0.9 Ω TYPICAL RDS(on) = 0.80 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 1 2 TO-220 TO-220FP DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ product Figure 2: Internal Schematic Diagram APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING Table 2: Order Codes SALES TYPE STF7NK30Z STP7NK30Z MARKING F7NK30Z P7NK30Z PACKAGE TO-220FP TO-220 PACKAGING TUBE TUBE Rev. 2 September 2005 1/12 STP7NK30Z - STF7NK30Z Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Parameter STP7NK30Z Value STF7NK30Z Unit V V V 5 (*) 3.2 (*) 20 (*) 20 0.16 A A A W W/°C V V/ns 2500 V °C °C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 5 3.2 20 50 0.4 300 300 ± 30 2800 4.5 -55 to 150 -55 to 150 ( ) Pulse width limited by safe operating area (1) ISD ≤5.7A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed Table 4: Thermal Data TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 2.50 62.5 300 TO-220FP 6.25 °C/W °C/W °C Table 5: Avalanche Characteristics Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 5 130 Unit A mJ Table 6: Gate-Source Zener Diode Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/12 STP7NK30Z - STF7NK30Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On /Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID =1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20V VDS = VGS, ID = 50µA VGS = 10V, ID = 2.5 A 3 3.75 0.80 Min. 300 1 50 ±10 4.5 0.90 Typ. Max. Unit V µA µA µA V Ω Table 8: Dynamic Symbol gfs (1) Ciss Coss Crss Coss eq. (3) td(on) tr td(off) tf tr(Voff) tf tc Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS =15 V, ID = 2.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 2.5 380 74 15 30 11 25 20 10 8.5 8.5 20 13 4.5 7.6 17 Max. Unit S pF pF pF pF ns ns ns ns ns ns ns nC nC nC Equivalent Output Capacitance VGS = 0V, VDS = 0V to 400V Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 425 V, ID = 2.8 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) VDD = 320V, ID = 5A, RG = 4.7Ω, VGS = 10V (see Figure 17) VDD = 320V, ID = 5 A, VGS = 10V (see Figure 21) Table 9: Source Drain Diode Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, VGS = 0 ISD = 5 A, di/dt = 100A/µs VDD = 40, Tj = 150°C (see Figure 19) 154 716 9.3 Test Conditions Min. Typ. Max. 5 20 1.6 Unit A A V ns nC A (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/12 STP7NK30Z - STF7NK30Z Figure 3: Safe Operating Area for TO-220 Figure 6: Thermal Impedance for TO-220 Figure 4: Safe Operating Area for TO-220FP Figure 7: Thermal Impedance for TO-220FP Figure 5: Output Characteristics Figure 8: Transfer Characteristics 4/12 STP7NK30Z - STF7NK30Z Figure 9: Transconductance Figure 12: Static Drain-source On Resistance Figure 10: Gate Charge vs Gate-source Voltage Figure 13: Capacitance Variations Figure 11: Normalized Gate Thereshold Voltage vs Temperature Figure 14: Normalized BVDSS vs Temperature 5/12 STP7NK30Z - STF7NK30Z Figure 15: Normalized On Resistance vs TemperatureS Figure 16: Source-Drain Diode Forward Characteristics 6/12 STP7NK30Z - STF7NK30Z Figure 17: Unclamped Inductive Load Test Circuit Figure 20: Unclamped Inductive Wafeform Figure 18: Switching Times Test Circuit For Resistive Load Figure 21: Gate Charge Test Circuit Figure 19: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/12 STP7NK30Z - STF7NK30Z In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/12 STP7NK30Z - STF7NK30Z TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 D F G1 H F2 L2 L5 E 123 L4 G 9/12 STP7NK30Z - STF7NK30Z TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 10/12 STP7NK30Z - STF7NK30Z Table 10: Revision History Date 10-May-2005 05-Sep-2005 Revision 1 2 Description of Changes New stylesheet Inserted Ecopack indication 11/12 STP7NK30Z - STF7NK30Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12