STP80N6F6

STP80N6F6 Automotive-grade N-channel 60 V, 4.4 mΩ typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet - production data Features TAB Order code VDS RDS(on) max. ID STP80N6F6 60 V 5 mΩ 80 A(1) 1. Current limited by package • Designed for automotive applications and AEC-Q101 qualified 3 1 2 • Low gate charge • Very low on-resistance TO-220 • High avalanche ruggedness Figure 1. Internal schematic diagram Applications • Switching applications 'Ć7$% Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. * 6 $0Y Table 1. Device summary Order code Marking Packages Packaging STP80N6F6 80N6F6 TO-220 Tube January 2014 This is information on a product in full production. DocID023470 Rev 2 1/12 www.st.com Contents STP80N6F6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 DocID023470 Rev 2 STP80N6F6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V Drain current (continuous) at TC = 25 °C 80 A Drain current (continuous) at TC = 100 °C 80 A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 120 W Derating factor 0.8 W/°C - 55 to 175 °C Value Unit Thermal resistance junction-case max 1.25 °C/W Thermal resistance junction-ambient max 62.5 °C/W ID (1) ID (1) IDM (1) PTOT Tstg Tj 1. Parameter Storage temperature Operating junction temperature Current limited by package Table 3. Thermal data Symbol Rthj-case Rthj-a Parameter DocID023470 Rev 2 3/12 12 Electrical characteristics 2 STP80N6F6 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS IDSS Parameter Test conditions Drain-source breakdown voltage (VGS = 0) Zero gate voltage Drain current (VGS = 0) ID = 250 μA Typ. VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 40 A Unit V 1 μA 100 μA ± 100 nA 4.5 V 4.4 5 mΩ Min. Typ. Max. Unit - 8325 - pF - 500 - pF - 400 - pF - 147 - nC - 44 - nC - 46 - nC Min. Typ. Max. Unit - 40 - ns VDS = 60 V, TC=125 °C VGS = ± 20 V Max. 60 VDS = 60 V Gate-body leakage current (VDS = 0) IGSS Min. 3 Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 30 V, ID = 80 A, VGS = 10 V Table 6. Switching times Symbol td(on) tr td(off) tf 4/12 Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time VDD = 30 V, ID = 40 A RG = 4.7 Ω VGS = 10 V Fall time DocID023470 Rev 2 71 ns - 132 - ns - 40 - ns STP80N6F6 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit Source-drain current - 80 A ISDM (1) Source-drain current (pulsed) - 320 A VSD (2) Forward on voltage ISD = 80 A, VGS = 0 - 1.3 V trr Reverse recovery time - 46 ns Qrr Reverse recovery charge - 65 nC IRRM Reverse recovery current ISD = 80 A, VDD = 48 V di/dt = 100 A/μs, Tj = 150 °C - 2.8 A ISD 1. Current limited by package. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID023470 Rev 2 5/12 12 Electrical characteristics 2.1 STP80N6F6 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM17950v1 ID (A) 100 s ai are n) his S(o n t x RD i a n tio y m era d b Op ite Lim 10 100µs 1ms 10ms 1 Tj=175°C Tc=25°C Single pulse 0.1 0.1 1 VDS(V) 10 Figure 4. Output characteristics Figure 5. Transfer characteristics AM17951v1 ID (A) VGS=8, 9, 10V 350 AM17952v1 ID (A) 350 VDS=3V 7V 300 300 250 250 6V 200 200 150 150 100 100 50 50 5V 0 0 0 4 2 6 8 VDS(V) Figure 6. Gate charge vs gate-source voltage AM17953v1 VGS (V) VDD=30V ID=80A 12 2 0 4 8 6 10 VGS(V) Figure 7. Static drain-source on-resistance AM17954v1 RDS(on) (mΩ) VGS=10V 10.0 10 8.0 8 6.0 6 4.0 4 2.0 2 0 0 6/12 50 100 150 Qg(nC) 0.0 DocID023470 Rev 2 0 10 20 30 40 50 60 70 ID(A) STP80N6F6 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature AM17955v1 C (pF) AM17956v1 VGS(th) (norm) Ciss ID=250µA 1.2 1 0.8 1000 0.4 Coss Crss 0.6 0.2 0 -75 100 0 20 60 40 VDS(V) Figure 10. Normalized on-resistance vs temperature AM17957v1 RDS(on) -25 25 125 TJ(°C) Figure 11. Normalized VDS vs temperature AM17958v1 VDS (norm) (norm) ID=40A ID=1mA 2 1.1 1.5 1.05 1 1 0.5 0.95 0 -75 75 -25 25 75 TJ(°C) 125 0.9 -75 -25 25 75 125 TJ(°C) Figure 12. Source-drain diode forward characteristics AM17959v1 VSD (V) TJ=-50°C 1 0.8 0.6 TJ=25°C TJ=150°C 0.4 0.2 0 0 20 40 60 80 ISD(A) DocID023470 Rev 2 7/12 12 Package mechanical data 3 STP80N6F6 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 8/12 DocID023470 Rev 2 STP80N6F6 Package mechanical data Figure 13. TO-220 type A drawing BW\SH$B5HYB7 DocID023470 Rev 2 9/12 12 Package mechanical data STP80N6F6 Table 8. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 10/12 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID023470 Rev 2 STP80N6F6 4 Revision history Revision history Table 9. Document revision history Date Revision 08-Aug-2012 1 Changes Initial release. – – – – – – 21-Jan-2014 2 – – – – – – Document status promoted from preliminary to production data Modified: title Modified: Features Added: note 1 in cover page Modified: RDS(on)max and ID values in cover page Modified: ID (at TC = 25 °C and at TC = 100 °C) values, ID, IDM values and added note 1 in Table 2 Modified: Rthj-case value in Table 3 Modified: RDS(on) values in Table 4 Modified: ID and the entire typical values in Table 5, 6 and 7 Added: Section 2.1: Electrical characteristics (curves) Updated: Section 3: Package mechanical data Minor text changes DocID023470 Rev 2 11/12 12 STP80N6F6 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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