STP80NF03L

STP80NF03L N-CHANNEL 30V - 0.004 Ω - 80A TO-220 STripFET™ II MOSFET TYPE STP80NF03L VDSS RDS(on) ID 30 V < 0.0045 Ω 80 A TYPICAL RDS(on) = 0.004 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE ■ ■ ■ ■ 3 1 2 TO-220 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. c u d ) s t( o r P INTERNAL SCHEMATIC DIAGRAM e t le o s b O - APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION,ABS, AIR-BAG ,LAMPDRIVERS Etc.) ) s ( ct u d o r P e t e l o ORDERING INFORMATION bs O SALES TYPE MARKING PACKAGE PACKAGING STP80NF03L P80NF03L TO-220 TUBE . January 2004 1/8 STP80NF03L ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR Parameter Value Unit Drain-source Voltage (VGS = 0) 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V VGS Gate-source Voltage ± 20 V ID (#) Drain Current (continuous) at TC = 25°C 80 A ID (#) Drain Current (continuous) at TC = 100°C 80 A Drain Current (pulsed) 320 A Total Dissipation at TC = 25°C 300 W Derating Factor 2.0 W/°C Peak Diode Recovery Voltage Slope 2.0 V/ns –65 to 175 °C 175 °C IDM (
) PTOT dv/dt (1) Tstg Tj Storage Temperature Max. Operating Junction Temperature (#) Current Limited by Package. (
) Pulse width limited by safe operating area. (1) ISD ≤ 80A, di/dt ≤ 240 A/µs, VDD = 24V ; T j ≤ TJMAX. c u d THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Tl AVALANCHE CHARACTERISTICS Symbol Parameter ro 0.5 P e let Maximum Lead Temperature For Soldering Purpose Typ ) s t( o s b O - °C/W 62.5 °C/W 300 °C Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 40 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 20 V) 2.3 J ) s ( ct u d o ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF/ON Symbol r P e t e l o V(BR)DSS Test Conditions Min. Typ. Max. ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.5 2.5 V RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 40 A VGS = 4.5 V, ID = 40 A 0.004 0.0045 0.0045 0.0065 Ω Ω s b O IGSS 30 Unit Drain-source Breakdown Voltage IDSS 2/8 Parameter 1 V STP80NF03L ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs (1) Parameter Test Conditions Forward Transconductance Min. Max. Unit 50 S 5500 pF Output Capacitance 1670 pF Reverse Transfer Capacitance 290 pF Ciss Input Capacitance Coss Crss VDS =15 V, ID = 15 A Typ. VDS = 25V, f = 1 MHz, VGS = 0 SWITCHING ON Symbol td(on) tr Parameter Test Conditions Typ. VDD = 15 V, ID = 40 A RG = 4.7Ω VGS = 4.5 V (Resistive Load, Figure 3) Turn-on Delay Time Rise Time Qg Qgs Qgd Min. Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 24V, ID = 80A, VGS = 4.5V Parameter ns 270 ns 85 23 40 Test Conditions td(off) tf Turn-off-Delay Time Fall Time VDD = 15 V, ID = 40 A, RG = 4.7Ω, VGS = 4.5V (Resistive Load, Figure 3) tr(Voff) tf tc Off-Voltage Rise Time Fall Time Cross-over Time Vclamp = 24 V, ID = 80 A, RG = 4.7Ω, VGS = 4.5V (Inductive Load, Figure 5) SOURCE DRAIN DIODE Symbol ISD Parameter t c u Source-drain Current (pulsed) VSD (2) Forward On Voltage trr Qrr IRRM (s) Source-drain Current ISDM (1) od Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current r P e Min. 110 c u d Typ. Test Conditions Min. ) s t( Max. Unit 110 95 ns ns 125 75 125 ns ns ns Typ. ISD = 80 A, VGS = 0 ISD = 80 A, di/dt = 100 A/µs, VDD = 20 V, Tj = 150°C (see test circuit, Figure 5) nC nC nC ro P e let o s b O - Unit 30 SWITCHING OFF Symbol Max. 75 0.15 4 Max. Unit 80 A 320 A 1.5 V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. t e l o s b O 3/8 STP80NF03L Safe Operating Area Thermal Impedance Output Characteristics Transfer Characteristics c u d e t le ) s ( ct Transconductance r P e u d o t e l o s b O 4/8 o r P o s b O - Static Drain-source On Resistance ) s t( STP80NF03L Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature c u d e t le ) s ( ct u d o Source-drain Diode Forward Characteristics r P e ) s t( o r P o s b O - NormalizedBreakdownVoltage vs Temperature t e l o s b O 5/8 STP80NF03L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit c u d e t le ) s ( ct u d o o s b O - Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times r P e t e l o s b O 6/8 o r P ) s t( STP80NF03L TO-220 MECHANICAL DATA mm. DIM. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 0.052 F 1.23 1.32 0.048 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 Q 2.65 2.95 0.104 e t le ) s ( ct c u d ) s t( o r P 0.151 0.116 o s b O - u d o r P e t e l o s b O 7/8 STP80NF03L c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners s b O © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8