STP80NF70

STP80NF70 N-channel 68 V, 0.0082 Ω, 98 A, TO-220 STripFET™ II Power MOSFET Features Type VDSS RDS(on) max ID STP80NF70 68 V < 0.0098 Ω 98 A ■ Exceptional dv/dt capability ■ 100% avalanche tested 3 1 TO-220 Application ■ 2 Switching applications Description The STP80NF70 is a N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process. It has specifically been designed to minimize input capacitance and gate charge. The device is therefore suitable in advanced high-efficiency switching applications. Figure 1. Internal schematic diagram $4!"OR ' 3 3# Table 1. Device summary Order code Marking Package Packaging STP80NF70 80NF70 TO-220 Tube June 2010 Doc ID 17610 Rev 1 1/13 www.st.com 13 Contents STP80NF70 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ............................................... 9 Doc ID 17610 Rev 1 STP80NF70 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage Value Unit 68 V ± 20 V ID Drain current (continuous) at TC = 25 °C 98 A ID Drain current (continuous) at TC=100 °C 68 A Drain current (pulsed) 392 A Total dissipation at TC = 25 °C 190 W Derating factor 1.27 W/°C 13 V/ns 700 mJ -55 to 175 °C Value Unit IDM (1) PTOT dv/dt (2) Peak diode recovery voltage slope EAS (3) Tstg TJ Single pulse avalanche energy Storage temperature Operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX. 3. Starting TJ = 25 oC, ID = 40 A, VDD = 34 V. Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max 0.79 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose(1) 300 °C 1. 1.6 mm from case for 10 sec. Doc ID 17610 Rev 1 3/13 Electrical characteristics 2 STP80NF70 Electrical characteristics (TCASE=25°C unless otherwise specified). Table 4. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, IGSS Gate body leakage current (VDS = 0) VGS = ±20 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 40 A V(BR)DSS Table 5. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Min. Typ. Max. 68 V VDS = Max rating @125 °C 2 Unit 3 1 10 µA µA ±100 nA 4 V 0.0082 0.0098 Ω Dynamic Parameter Test conditions Min. Typ. Max. Unit Forward transconductance VDS = 15 V, ID = 40 A - 60 - S Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f = 1 MHz, VGS = 0 - 2550 550 175 - pF pF pF - 75 17 30 - nC nC nC Min. Typ. Max. Unit - 17 60 90 75 - ns ns ns ns Total gate charge Gate-source charge Gate-drain charge VDD = 34 V, ID = 80 A VGS =10 V 1. Pulsed: pulse duration=300µs, duty cycle 1.5%. Table 6. Symbol td(on) tr td(off) tf 4/13 Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= 34 V, ID= 40 A, RG=4.7 Ω, VGS=10 V Figure 13 on page 9 Doc ID 17610 Rev 1 STP80NF70 Electrical characteristics Table 7. Symbol ISD Source drain diode Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 98 A ISDM(1) Source-drain current (pulsed) - 392 A VSD(2) Forward on voltage - 1.5 V trr Qrr IRRM ISD = 80 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs, VDD = 25 V, TJ = 150 °C Figure 15 on page 9 - 70 160 4.7 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 17610 Rev 1 5/13 Electrical characteristics STP80NF70 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM00935v2 ID (A) Operation in this area is limited by max RDS(on) 100 100µs 10 1ms 10ms 1 0.1 0.1 Figure 4. 1 10 VDS(V) Output characteristics AM00936v1 ID (A) VGS=10V 8V 250 AM00937v1 ID (A) VDS=10V 250 7V 200 200 150 150 6V 100 100 50 50 5V 0 6/13 0 5 10 15 VDS(V) Doc ID 17610 Rev 1 0 2 3 4 5 6 7 8 9 VGS(V) STP80NF70 Figure 6. Electrical characteristics Normalized BVDSS vs temperature AM00957v1 VBR(DSS) (norm) Figure 7. Static drain-source on resistance VGS=0 RDS(on) (mΩ) ID=250µA 9.5 AM00951v1 1.2 9 1.1 8.5 1.0 8 0.9 0.8 Figure 8. 7.5 7 -50 0 100 50 Gate charge vs gate-source voltage Figure 9. AM00952v1 VGS (V) ID(A) Capacitance variations AM00953v1 C(pF) TJ=25°C VDD=34V ID=80A 12 80 60 40 20 0 TJ(°C) 5000 f=1MHz 10 4000 8 3000 Ciss 6 2000 4 Crss 1000 2 0 Coss 60 40 20 0 80 0 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature 0 10 20 40 30 50 Figure 11. Normalized on resistance vs temperature AM00954v1 VGS(th) (norm) AM00955v1 RDS(on) (norm) VDS=VGS ID=250µA 1.0 1.8 0.9 1.4 0.8 1.0 0.7 0.6 0.6 -50 0 50 100 60 Qg(nC) TJ(°C) Doc ID 17610 Rev 1 0.2 VGS=10V ID=40A -50 0 50 100 TJ(°C) 7/13 Electrical characteristics STP80NF70 Figure 12. Source-drain diode forward characteristics AM00956v1 VSD (V) 1.1 TJ=-55°C 0.9 0.7 25°C 0.5 175°C 0.3 8/13 0 20 40 60 80 ISD(A) Doc ID 17610 Rev 1 STP80NF70 3 Test circuits Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Doc ID 17610 Rev 1 9/13 Package mechanical data 4 STP80NF70 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/13 Doc ID 17610 Rev 1 STP80NF70 Package mechanical data TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S Doc ID 17610 Rev 1 11/13 Revision history 5 STP80NF70 Revision history Table 8. 12/13 Document revision history Date Revision 11-Jun-2010 1 Changes First release. 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