STP8NM60D

STB8NM60D STP8NM60D N-CHANNEL 600V - 0.9Ω - 8A - TO-220/D2PAK Fast Diode MDmesh™ Power MOSFET General features Type VDSS RDS(on) ID PTOT STB8NM60D STP8NM60D 600V 600V < 1.0Ω < 1.0Ω 8A 8A 100W 100W ■ High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Fast internal recovery diode 3 1 TO-220 2 3 1 D²PAK Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters Internal schematic diagram Applications The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. Order codes Sales Type Marking Package Packaging STB8NM60D B8NM60D D²PAK TAPE & REEL STP8NM60D P8NM60D TO-220 TUBE February 2006 Rev2 1/13 www.st.com 13 Electrical ratings 1 STB8NM60D - STP8NM60D Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Drain-Source Voltage (V GS = 0) 600 V VDGR Drain-gate Voltage (R GS = 20kΩ) 600 V VGS Gate-Source Voltage ±30 V VDS Parameter ID Drain Current (continuous) at T C = 25°C 8 A ID Drain Current (continuous) at T C=100°C 5 A Drain Current (pulsed) 32 A Total Dissipation at T C = 25°C 100 W Derating Factor 0.8 W/°C Peak Diode Recovery voltage slope 20 V/ns -65 to 150 °C IDM (1) PTOT dv/dt(2) TJ Tstg Operating Junction Temperature Storage Temperature 1. Pulse width limited by safe operating area 2. ISD ≤5A, di/dt ≤400A/µs, VDD =80%V(BR)DSS Table 2. Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case Max 1.25 °C/W Rthj-amb Thermal resistance junction-ambient Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Value Unit Table 3. Symbol 2/13 Thermal data Avalanche data Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 2.5 A EAS Single pulse avalanche energy (starting Tj=25°C, ID=IAR, VDD=50V) 200 mJ Rev2 STB8NM60D - STP8NM60D 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol On/off states Parameter Test Condictions V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS Gate Body Leakage Current VGS = ±30V, VDS = 0 (V DS = 0) ID = 250µA, V GS= 0 VDS= VGS, ID = 250µA RDS(on) Static Drain-Source On Resistance VGS= 10V, ID=2.5A Parameter gfs (1) Forward Transconductance Crss Coss eq.(2) Qg Qgs Qgd 3 Unit V 1 10 µA µA ±100 nA 4 5 V 0.9 1 Ω Typ. Max. Unit Dynamic Symbol Coss Max. 600 VDS = Max Rating,Tc=125°C Gate Threshold Voltage Ciss Typ. VDS = Max Rating, VGS(th) Table 5. Min. Test Condictions VDS =ID(on) x R DS(on)max ID = 2.5A Min. 2.4 S pF pF pF pF Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS =25V, f=1 MHz, VGS=0 380 170 14 Equivalent Ouput Capacitance VGS=0, V DS =0V to 480V 60 Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=400V, ID = 5A VGS =10V 15 4 8 (see Figure 13) 18 nC nC nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS increases from 0 to 80% VDSS Rev2 3/13 Electrical characteristics STB8NM60D - STP8NM60D Table 6. Switching times Symbol Parameter td(on) tr td(off) tf td(off) tf tc Table 7. Symbol ISD ISDM (1) VSD(2) trr Qrr IRRM trr Qrr IRRM Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-off Delay Time Fall Time Cross-over Time Test Condictions VDD =300V, ID=2.5A, RG=4.7Ω, VGS=10V (see Figure 12) VDD =480V, ID=5A, RG=4.7Ω, VGS=10V (see Figure 12) Typ. Max. Unit 13 10 26 8 ns ns ns ns 8 8 14 ns ns ns Source drain diode Parameter Test Condictions Min. Typ. Source-drain Current Source-drain Current (pulsed) Max. Unit 5 20 A A 1.5 V Forward on Voltage ISD=5A, V GS=0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=5A, di/dt = 100A/µs, VDD=50 V, Tj=25°C 107 330 6 ns nC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=5A, di/dt = 100A/µs, VDD=50 V, Tj=150°C 178 640 7 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/13 Min. Rev2 STB8NM60D - STP8NM60D Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance Rev2 5/13 Electrical characteristics STB8NM60D - STP8NM60D Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 6/13 Capacitance variations Rev2 STB8NM60D - STP8NM60D 3 Test circuit Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform Rev2 7/13 Package mechanical data 4 STB8NM60D - STP8NM60D Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/13 Rev2 STB8NM60D - STP8NM60D Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. inch TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 Rev2 9/13 Package mechanical data STB8NM60D - STP8NM60D D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 10.4 0.393 D1 E 8 0.315 10 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 R 0.126 0.015 0º 4º 3 V2 0.4 1 10/13 Rev2 STB8NM60D - STP8NM60D 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 0.153 0.161 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. P0 3.9 4.1 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type Rev2 11/13 Revision history 6 STB8NM60D - STP8NM60D Revision history Table 8. 12/13 Document revision history Date Revision Changes 13-Jan-2006 1 Initial release. 15-Feb-2006 2 Modified Description on first page Rev2 STB8NM60D - STP8NM60D Revision history Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Rev2 13/13