STP90N6F6

STP90N6F6 N-channel 60 V, 0.0057 Ω typ., 90 A STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Order code VDS RDS(on) max. ID PTOT STP90N6F6 60 V 0.0063 Ω 90 A 136 W • • • • Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications • Switching applications Description Figure 1: Internal schematic diagram This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features Table 1: Device summary Order code Marking Package Packaging STP90N6F6 90N6F6 TO-220 Tube March 2015 DocID025190 Rev 3 This is information on a product in full production. 1/13 www.st.com Contents STP90N6F6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 5 2/13 TO-220 type A package information................................................ 10 Revision history ............................................................................ 12 DocID025190 Rev 3 STP90N6F6 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 90 A ID Drain current (continuous) at TC= 100 °C 70 A (1) IDM Drain current (pulsed) 360 A PTOT Total dissipation at TC = 25 °C 136 W Tstg Storage temperature - 55 to 175 °C 175 °C Value Unit Tj Max. operating junction temperature Notes: (1) Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max. 1.1 °C/W Rthj-amb Thermal resistance junction-ambient max. 62.5 °C/W Value Unit Table 4: Avalanche characteristics Symbol Parameter IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax) 45 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAV, VDD = 43 V) 152 mJ DocID025190 Rev 3 3/13 Electrical characteristics 2 STP90N6F6 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 5: Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 250 µA Min. Typ. Max. 60 Unit V VGS = 0 V, VDS = 60 V 10 µA VGS = 0 V, VDS = 60 V, Tj = 125 °C 100 µA ±100 nA 4 V 0.0057 0.0063 Ω Min. Typ. Max. Unit - 4295 - pF - 292 - pF - 190 - pF - 74.9 - nC - 19 - nC - 18.3 - nC - 2.2 - Ω Test conditions Min. Typ. Max. Unit VDD = 30 V, ID = 45 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Switching times test circuit for resistive load" and Figure 18: "Switching time waveform") - 22 - ns - 42 - ns - 73 - ns - 16 - ns IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS = 10 V, ID= 45 A 2 Table 6: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Intrinsic gate resistance Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 30 V, ID = 90 A, VGS = 10 V (see Figure 14: "Gate charge test circuit") f = 1 MHz open drain Table 7: Switching times Symbol td(on) tr td(off) tf 4/13 Parameter Turn-on delay time Rise time Turn-off-delay time Fall time DocID025190 Rev 3 STP90N6F6 Electrical characteristics Table 8: Source-drain diode Symbol (1) VSD Parameter Test conditions Forward on voltage VGS = 0 V, ISD = 90 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 90 A, di/dt = 100 A/µs, VDD = 48 V, Tj = 25 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") Min. Typ. - Max. Unit 1.3 V - 49 ns - 8.5 µC - 0.3 A Notes: (1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DocID025190 Rev 3 5/13 Electrical characteristics 2.1 STP90N6F6 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Normalized gate threshold voltage vs. temperature Figure 7: Normalized V(BR)DSS vs. temperature GIPG180320141610SA V (BR)DSS (norm) ID=250µ A 1.15 1.1 1.05 1 0.95 0.9 0.85 0.8 -55 -30 6/13 DocID025190 Rev 3 -5 20 45 70 95 120 T J(°C) STP90N6F6 Electrical characteristics Figure 8: Static drain-source on-resistance Figure 9: Normalized on-resistance vs. temperature Figure 10: Gate charge vs. gate-source voltage Figure 11: Capacitance variations Figure 12: Source- drain diode forward characteristics DocID025190 Rev 3 7/13 Test circuits 3 STP90N6F6 Test circuits Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit VDD 47 k Ω 12 V 1 kΩ 100 nF I G = CONST Vi ≤ V GS 100 Ω D.U.T. 2.7 k Ω 2200 μ F VG 47 k Ω 1 kΩ PW AM01469v 1 Figure 15: Test circuit for inductive load switching and diode recovery times A A D.U.T. FAST DIODE B B Figure 16: Unclamped inductive load test circuit A D G S 25 Ω L=100 µH 3.3 µF B 1000 µF D G RG VDD D.U.T. S AM01470v1 Figure 18: Switching time waveform Figure 17: Unclamped inductive waveform t on V(BR)DSS t d(on) toff tr t d(off) tf VD 90% 90% I DM 10% 0 ID VDD VDD AM01472v 1 8/13 10% VGS 0 DocID025190 Rev 3 10% VDS 90% AM01473v 1 STP90N6F6 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. DocID025190 Rev 3 9/13 Package information 4.1 STP90N6F6 TO-220 type A package information Figure 19: TO-220 type A package outline 10/13 DocID025190 Rev 3 STP90N6F6 Package information Table 9: TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID025190 Rev 3 11/13 Revision history 5 STP90N6F6 Revision history Table 10: Document revision history Date Revision 03-Sep-2013 1 Initial release. 2 Document status promoted from preliminary to production data. Updated new section curves. Minor text changes. 3 Minor text edits throughout document On cover page: updated title descritpion, features table and descritpion In section 1 Electrical ratings: renamed and updated Table 5 "Static" (was On/off states), Table 6 "Dynamic", Table 7 "Switching times", Table 8 "Source-drain diode" In section 2 Electrical characteristics: updated Table 2 "Absolute maximum ratings" and Table 4 "Avalanche charateristics"; updated Section 2.1 Electrical characteristics (curves) 03-Apr-2014 13-Mar-2015 12/13 Changes DocID025190 Rev 3 STP90N6F6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID025190 Rev 3 13/13