STP9N65M2

STD9N65M2, STF9N65M2 STP9N65M2, STU9N65M2 Datasheet N-channel 650 V, 0.79 Ω typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features TAB 1 2 3 Order codes DPAK TAB IPAK 1 2 VDS RDS(on) max. ID STD9N65M2 3 1 TAB 2 STF9N65M2 3 STP9N65M2 TO-220FP DPAK 650 V 0.90 Ω STU9N65M2 TO-220 1 2 3 D(2, TAB) Package • • Extremely low gate charge Excellent output capacitance (COSS) profile • • 100% avalanche tested Zener-protected 5A TO-220FP TO-220 IPAK Applications G(1) • S(3) AM01475V1 Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status link STD9N65M2 STF9N65M2 STP9N65M2 STU9N65M2 DS10197 - Rev 3 - June 2019 For further information contact your local STMicroelectronics sales office. www.st.com STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VGS Value Parameter DPAK, TO-220, IPAK Gate-source voltage TO-220FP ±25 V ID Drain current (continuous) at TC = 25 °C 5 5(1) ID Drain current (continuous) at TC = 100 °C 3.2 3.2(1) IDM (2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) A 60 Peak diode recovery voltage slope 15 dv/dt(4) MOSFET dv/dt ruggedness 50 Tstg Storage temperature range TJ A 20 dv/dt(3) 20 W 2.5 kV V/ns -55 to 150 Operating junction temperature range Unit °C 1. Current limited by package. 2. Pulse width is limited by safe operating area. 3. ISD ≤ 5 A, di/dt = 400 A/μs; VDS(peak) < V(BR)DSS, VDD = 400 V. 4. VDS ≤ 520 V. Table 2. Thermal data Symbol Parameter Rthj-case Rthj-pcb Rthj-amb(1) Value DPAK TO-220FP Thermal resistance junction-case 2.08 6.25 Thermal resistance junction-pcb 50 Thermal resistance junction-ambient TO-220 IPAK 2.08 Unit °C/W °C/W 62.5 100 °C/W 1. When mounted on 1 inch2 FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol IAR EAS DS10197 - Rev 3 Parameter Avalanche current, repetitive or not repetitive (pulse width limited by TJ max) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR; VDD = 50 V) Value Unit 1 A 105 mJ page 2/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 1 mA Typ. 650 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 2.5 A VGS = 0 V, VDS = 650 V, TC = 125 °C Unit V VGS = 0 V, VDS = 650 V IDSS Max. 1 µA 100 µA ±10 µA 3 4 V 0.79 0.90 Ω Min. Typ. Max. Unit - 310 - pF - 18 - pF - 0.9 - pF (1) 2 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V Equivalent capacitance energy related VDS = 0 to 520 V, VGS = 0 V - 109 - pF Rg Intrinsic gate resistance f = 1 MHz open drain - 6.6 - Ω Qg Total gate charge VDD = 520 V, ID = 5 A - 10.3 - nC Gate-source charge VGS = 0 to 10 V - 2.4 - nC Gate-drain charge (see Figure 18. Test circuit for gate charge behavior) - 4.8 - nC Coss eq. (1) Qgs Qgd 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS10197 - Rev 3 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 325 V, ID = 2.5 A, - 7.5 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 6.6 - ns Turn-off delay time (see Figure 17. Test circuit for resistive load switching times and Figure 22. Switching time waveform) - 22.5 - ns - 18 - ns Fall time page 3/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 Electrical characteristics Table 7. Source-drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 5 A ISDM (1) Source-drain current (pulsed) - 20 A VSD (2) Forward on voltage - 1.6 V trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Qrr IRRM ISD = 5 A, VGS = 0 V - 276 ns (see Figure 19. Test circuit for inductive load switching and diode recovery times) - 1.7 µC - 12.5 A Reverse recovery time ISD = 5 A, di/dt = 100 A/µs, - 312 ns Reverse recovery charge VDD = 60 V, TJ = 150 °C - 1.9 µC Reverse recovery current (see Figure 19. Test circuit for inductive load switching and diode recovery times) - 12.4 A ISD = 5 A, di/dt = 100 A/µs, VDD = 60 V 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. DS10197 - Rev 3 page 4/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for DPAK and IPAK Figure 2. Thermal impedance for DPAK and IPAK AM18058v1 ID (A) 10 n) (o DS O p Li e ra m ite tio n d b y in t m h is ax a R re a is 10µs 1 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C S ingle puls e 0.01 0.1 1 10 100 VDS (V) Figure 3. Safe operating area for TO-220FP AM18056v1 ID (A) Figure 4. Thermal impedance for TO-220FP K GC20940 (o n) 10µs 10 -1 DS O p Li e ra m ite tio n d b y in t m h is ax a R re a is 10 1 100µs 1ms 10ms 0.1 10 -2 Tj=150°C Tc=25°C S ingle puls e 0.01 0.1 1 10 100 VDS (V) Figure 5. Safe operating area for TO-220 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 t p (s) Figure 6. Thermal impedance for TO-220 AM18057v1 ID (A) 10 n) (o DS O p Li e ra m ite tio n d b y in t m h is ax a R re a is 10µs 1 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C S ingle puls e 0.01 0.1 DS10197 - Rev 3 1 10 100 VDS (V) page 5/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 Electrical characteristics (curves) Figure 7. Output characteristics ID (A) Figure 8. Transfer characteristics ID (A) GADG160320171044OCH VGS = 8, 9, 10 V VGS = 7 V 10 8 10 8 VGS = 6 V 6 6 4 4 2 4 8 12 16 20 VDS (V) Figure 9. Gate charge vs gate-source voltage VGS (V) GADG160320171046QVG VDS (V) VDD = 520 V, ID = 5 A 12 0 0 2 4 6 8 VGS (V) Figure 10. Static drain-source on-resistance AM18062v1 R DS (on) (Ω) VGS =10V 600 0.830 10 500 VDS 8 VDS = 20 V 2 VGS = 5 V 0 0 GADG160320171044TCH 400 0.820 0.810 0.800 6 300 4 200 2 100 0.770 0 Qg (nC) 0.760 0.790 0 0 2 4 6 8 10 2 3 4 5 ID(A) GADG160320171046BDV 1.12 CISS 2 1.08 ID = 1 mA 1.04 COSS 10 1 10 0 1 V(BR)DSS (norm.) GADG160320171212CVR 10 3 10 0 Figure 12. Normalized V(BR)DSS vs temperature Figure 11. Capacitance variations C (pF) 0.780 1.00 0.96 f = 1 MHz CRSS 0.92 10 -1 10 -1 DS10197 - Rev 3 10 0 10 1 10 2 VDS (V) 0.88 -75 -25 25 75 125 Tj (°C) page 6/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 Electrical characteristics (curves) Figure 13. Normalized gate threshold voltage vs temperature VGS(th) (norm.) GADG160320171045VTH RDS(on) (norm.) GADG160320171045RON 2.2 1.1 ID = 250 µA 1.8 1.0 VGS = 10 V 1.4 0.9 1.0 0.8 0.6 0.7 0.6 -75 Figure 14. Normalized on-resistance vs temperature -25 25 75 125 Tj (°C) Figure 15. Source-drain diode forward characteristics AM18068v1 VS D (V) 0.2 -75 -25 25 75 125 Tj (°C) Figure 16. Output capacitance stored energy EOSS GADG160320171046EOS TJ =-50°C 1.0 2.5 2.0 TJ 1.5 1.0 TJ =150°C 0.5 2 DS10197 - Rev 3 IS D 0.0 0 100 200 300 400 500 600 VDS (V) page 7/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 Test circuits 3 Test circuits Figure 17. Test circuit for resistive load switching times Figure 18. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 19. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 20. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 22. Switching time waveform Figure 21. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS10197 - Rev 3 page 8/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DS10197 - Rev 3 page 9/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 DPAK (TO-252) type A package information 4.1 DPAK (TO-252) type A package information Figure 23. DPAK (TO-252) type A package outline 0068772_A_26 DS10197 - Rev 3 page 10/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 DPAK (TO-252) type A package information Table 8. DPAK (TO-252) type A mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS10197 - Rev 3 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 11/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 DPAK (TO-252) type C package information 4.2 DPAK (TO-252) type C package information Figure 24. DPAK (TO-252) type C package outline 0068772_C_26 DS10197 - Rev 3 page 12/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 DPAK (TO-252) type C package information Table 9. DPAK (TO-252) type C mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.25 E 6.50 E1 4.70 e 5.46 6.10 6.20 6.60 6.70 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 2.90 REF 0.90 L3 L4 1.25 0.51 BSC 0.60 L6 DS10197 - Rev 3 5.33 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° page 13/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 DPAK (TO-252) type C package information Figure 25. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_26 DS10197 - Rev 3 page 14/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 DPAK (TO-252) packing information 4.3 DPAK (TO-252) packing information Figure 26. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS10197 - Rev 3 page 15/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 DPAK (TO-252) packing information Figure 27. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 10. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS10197 - Rev 3 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 16/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 TO-220FP package information 4.4 TO-220FP package information Figure 28. TO-220FP package outline 7012510_Rev_13_B DS10197 - Rev 3 page 17/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 TO-220FP package information Table 11. TO-220FP package mechanical data Dim. mm Min. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 E 0.45 0.70 F 0.75 1.00 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.20 G1 2.40 2.70 H 10.00 10.40 L2 DS10197 - Rev 3 Typ. 16.00 L3 28.60 30.60 L4 9.80 10.60 L5 2.90 3.60 L6 15.90 16.40 L7 9.00 9.30 Dia 3.00 3.20 page 18/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 TO-220 type A package information 4.5 TO-220 type A package information Figure 29. TO-220 type A package outline 0015988_typeA_Rev_22 DS10197 - Rev 3 page 19/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 TO-220 type A package information Table 12. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 DS10197 - Rev 3 Typ. 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 page 20/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 IPAK (TO-251) type A package information 4.6 IPAK (TO-251) type A package information Figure 30. IPAK (TO-251) type A package outline 0068771_IK_typeA_rev14 DS10197 - Rev 3 page 21/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 IPAK (TO-251) type A package information Table 13. IPAK (TO-251) type A package mechanical data Dim. mm Min. Typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H DS10197 - Rev 3 Max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° 1.00 page 22/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 IPAK (TO-251) type C package information 4.7 IPAK (TO-251) type C package information Figure 31. IPAK (TO-251) type C package outline 0068771_IK_typeC_rev14 DS10197 - Rev 3 page 23/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 IPAK (TO-251) type C package information Table 14. IPAK (TO-251) type C package mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.35 A1 0.90 1.00 1.10 b 0.66 0.79 b2 DS10197 - Rev 3 0.90 b4 5.23 5.33 5.43 c 0.46 0.59 c2 0.46 0.59 D 6.00 6.10 6.20 D1 5.20 5.37 5.55 E 6.50 6.60 6.70 E1 4.60 4.78 4.95 e 2.20 2.25 2.30 e1 4.40 4.50 4.60 H 16.18 16.48 16.78 L 9.00 9.30 9.60 L1 0.80 1.00 1.20 L2 0.90 1.08 1.25 θ1 3° 5° 7° θ2 1° 3° 5° page 24/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 Ordering information 5 Ordering information Table 15. Order codes Order code Marking STD9N65M2 STF9N65M2 STP9N65M2 STU9N65M2 DS10197 - Rev 3 9N65M2 Package Packing DPAK Tape and reel TO-220FP TO-220 Tube IPAK page 25/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 Revision history Table 16. Document revision history Date Version 24-Feb-2014 1 Changes First release. – Modified: title, Features and Description 15-Jul-2014 2 – Modified: Figure 5 and 15 – Updated: Figure 28 and Table 12 – Minor text changes. Removed maturity status indication from cover page. The document status is production data. 19-Jun-2019 3 Updated Section 1 Electrical ratings, Section 2 Electrical characteristics and Section 2.1 Electrical characteristics (curves) Minor text changes. DS10197 - Rev 3 page 26/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 5 4.1 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 DPAK (TO-252) type C package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.3 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.4 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.5 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.6 IPAK (TO-251) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.7 IPAK (TO-251) type C package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26 DS10197 - Rev 3 page 27/28 STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS10197 - Rev 3 page 28/28