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STP9N80K5

STP9N80K5

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO-220-3

  • 描述:

    MOSFET N-CHANNEL 800V 7A TO220

  • 数据手册
  • 价格&库存
STP9N80K5 数据手册
STP9N80K5, STW9N80K5 N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in a TO-220 and TO-247 packages Datasheet - production data Features TAB Order code STP9N80K5 STW9N80K5 1 TO-220 2 3 3 2 1 TO-247 Figure 1: Internal schematic diagram      VDS RDS(on) max. ID 800 V 0.90 Ω 7A Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code STP9N80K5 STW9N80K5 July 2016 Marking 9N80K5 DocID028461 Rev 3 This is information on a product in full production. Package TO-220 TO-247 Packing Tube 1/16 www.st.com Contents STP9N80K5, STW9N80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 5 2/16 4.1 TO-220 type A package information................................................ 11 4.2 TO-247 package information ........................................................... 13 Revision history ............................................................................ 15 DocID028461 Rev 3 STP9N80K5, STW9N80K5 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter VGS Value Unit ± 30 V 7 A Gate-source voltage ID Drain current (continuous) at TC= 25 °C ID Drain current (continuous) at TC = 100 °C 4.4 A Drain current (pulsed) 28 A W ID(1) PTOT Total dissipation at TC = 25 °C 110 dv/dt (2) Peak diode recovery voltage slope 4.5 dv/dt (3) MOSFET dv/dt ruggedness 50 TJ Operating unction temperature range Tstg Storage temperature range V/ns - 55 to 150 °C Notes: (1)Pulse (2)I SD (3)V width limited by safe operating area. ≤ 7 A, di/dt≤ 100 A/μs; VDS peak < V(BR)DSS,VDD= 640 V DS ≤ 640 V Table 3: Thermal data Symbol Parameter Value TO-220 Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Unit TO-247 1.14 62.5 °C/W 50 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 2.4 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 200 mJ DocID028461 Rev 3 3/16 Electrical characteristics 2 STP9N80K5, STW9N80K5 Electrical characteristics TC = 25 °C unless otherwise specified Table 5: On/off-state Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions Min. VGS = 0 V, ID = 1 mA 800 Typ. Max. Unit V VGS = 0 V, VDS = 800 V 1 µA IDSS Zero gate voltage drain current VGS = 0 V, VDS = 800 V TC = 125 °C(1) 50 µA IGSS Gate body leakage current VDS = 0 V, VGS = ±20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 4 5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 3.5 A 0.73 0.90 Ω Min. Typ. Max. Unit - 340 - pF - 37 - pF 3 Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Ciss Parameter Test conditions Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V Coss Output capacitance Crss Reverse transfer capacitance - 0.65 - pF Co(tr)(1) Equivalent capacitance time related - 61 - pF Co(er)(2) Equivalent capacitance energy related Rg Intrinsic gate resistance f = 1 MHz open drain - 7 - Ω Qg Total gate charge - 12 - nC Qgs Gate-source charge Qgd Gate-drain charge VDD = 640 V, ID = 7 A VGS= 10 V See (Figure 16: "Test circuit for gate charge behavior") VGS = 0 V, VDS = 0 to 640 V 22 pF - 3.8 - nC - 6.7 - nC Notes: (1)C o(tr) is a constant capacitance value that gives the same charging time as Coss while V DS is rising from 0 to 80% VDSS. (2)C o(er) is a constant capacitance value that gives the same stored energy as Coss while V DS is rising from 0 to 80% VDSS. Table 7: Switching times Symbol td(on) tr td(off) tf 4/16 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= 400 V, ID =3.5 A, RG = 4.7 Ω VGS = 10 V See (Figure 15: "Test circuit for resistive load switching times" and Figure 20: "Switching time waveform") DocID028461 Rev 3 Min. Typ. Max. Unit - 11 - ns - 5.7 - ns - 65.3 - ns - 13.6 - ns STP9N80K5, STW9N80K5 Electrical characteristics Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 7 A ISDM(1) Source-drain current (pulsed) - 28 A VSD(2) Forward on voltage - 1.5 V ISD = 7 A, VGS = 0 V trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 7 A, di/dt = 100 A/µs, VDD = 60 V See Figure 17: "Test circuit for inductive load switching and diode recovery times" ISD = 7 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C See Figure 17: "Test circuit for inductive load switching and diode recovery times" - 292 ns - 2.66 µC - 18.2 A - 477 ns - 3.91 µC - 16.4 A Notes: (1)Pulse width limited by safe operating area (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 9: Gate-source Zener diode Symbol V(BR)GSO Parameter Gate-source breakdown voltage Test conditions IGS= ± 1mA,ID= 0 A Min. Typ. Max. Unit 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. DocID028461 Rev 3 5/16 Electrical characteristics 2.1 6/16 STP9N80K5, STW9N80K5 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance DocID028461 Rev 3 STP9N80K5, STW9N80K5 Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Output capacitance stored energy Figure 13: Source-drain diode forward characteristics DocID028461 Rev 3 7/16 Electrical characteristics STP9N80K5, STW9N80K5 Figure 14: Maximum avalanche energy vs starting TJ 8/16 DocID028461 Rev 3 STP9N80K5, STW9N80K5 3 Test circuits Test circuits Figure 16: Test circuit for gate charge behavior Figure 15: Test circuit for resistive load switching times Figure 17: Test circuit for inductive load switching and diode recovery times Figure 18: Unclamped inductive load test circuit Figure 19: Unclamped inductive waveform DocID028461 Rev 3 Figure 20: Switching time waveform 9/16 Package information 4 STP9N80K5, STW9N80K5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/16 DocID028461 Rev 3 STP9N80K5, STW9N80K5 4.1 Package information TO-220 type A package information Figure 21: TO-220 type A package outline DocID028461 Rev 3 11/16 Package information STP9N80K5, STW9N80K5 Table 10: TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 12/16 Typ. 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID028461 Rev 3 STP9N80K5, STW9N80K5 4.2 Package information TO-247 package information Figure 22: TO-247 package outline DocID028461 Rev 3 13/16 Package information STP9N80K5, STW9N80K5 Table 11: TO-247 package mechanical data mm Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 14/16 Typ. 5.45 5.60 18.50 ØP 3.55 ØR 4.50 S 5.30 DocID028461 Rev 3 3.65 5.50 5.50 5.70 STP9N80K5, STW9N80K5 5 Revision history Revision history Table 12: Document revision history Date Revision Changes 13-Oct-2015 1 First release. 20-May-2016 2 Modified: Table 4: "Avalanche characteristics", Table 6: "Dynamic", Table 7: "Switching times" and Table 8: "Source-drain diode". Minor text changes 26-Jul-2016 3 Updated features in cover page. DocID028461 Rev 3 15/16 STP9N80K5, STW9N80K5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved 16/16 DocID028461 Rev 3
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