®
STPAC01F1
IPADTM
RF DETECTOR FOR POWER AMPLIFIER CONTROL
MAIN PRODUCT CHARACTERISTICS The STPAC01F1 has two outputs, one for the signal detection and another one for the temperature compensation: VDCout = 0.88 V at 0.85 GHz at 10 dBm VDCout = 1.07 V at 1.85 GHz at 10 dBm Vsupply = 5 V max.
s s s
DESCRIPTION The STPAC01 is an integrated RF detector for the power control stage. It converts RF signal coming from the coupler into a DC signal usable by the digital stage. It is based on the use of two similar diodes, one providing the signal detection while the second one is used to provide a temperature information to thermal compensation stage. A biasing stage suppresses the detection diode drop voltage effect. Target applications are cellular phones and PDA using GSM, DCS, PCS, AMPS, TDMA , CDMA and 800MHz to 1900MHz frequency ranges BENEFITS
s
Flip-Chip package
PIN CONFIGURATION (ball side)
3
DC out Gnd1 RFin
2
V Temp Gnd1 Gnd1
1
A
Gnd2 Bias
B C
The use of IPAD technology allows the RF front-end designer to save PCB area and to drastically suppress parasitic inductances.
FUNCTIONAL DIAGRAM
Coupler VBIAS RF input RF detector Low pass filter Thermal compensation STPAC01F1 GND1 GND2
VDCOut Vtemp
TM : IPAD is a trademark of STMicroelectronics.
January 2003 - Ed: 1
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STPAC01F1
ABSOLUTE RATINGS (Tamb = 25°C) Symbol VBIAS PRF FOP VPP TOP TSTG Bias voltage RF power at the RF input Operating frequency range ESD level as per MIL-STD 883E method 3015.7 notice 8 (HBM) Operating temperature range Storage temperature range Parameter and test conditions Value 5 20 0.8 to 2 100 -30 to +85 -55 to 150 Unit V dBm GHz V °C °C
ELECTRICAL CHARACTERISTICS (Tamb = 25°C) PARAMETERS RELATED TO BIAS VOLTAGE Symbol VBIAS IBIAS Parameter Operating bias voltage Bias current VBIAS = 3.2 V Test conditions Min. 2.2 Typ. Max. 3.2 0.5 Unit V mA
PARAMETERS RELATED TO DETECTION FUNCTION (VBIAS = 2.7 V, DC output load = 100 kΩ) Symbol VDCout Parameter DC output voltage (see fig. 1, IDC = 50µA) Test conditions F = 1.85 GHz, PRF = 10 dBm F = 1.85 GHz, PRF = -20 dBm F = 0.85 GHz, PRF = 10 dBm F = 0.85 GHz, PRF = -20 dBm ∆VDCout DC output voltage variation 0 < Tamb < 70°C, (see fig. 5, IDC = 50µA) F = 1.85 GHz, PRF = 10 dBm 2.2 < VBIAS < 3.2 V, F = 1.85 GHz, PRF = 10 dBm Min. 0.97 1.83 0.78 1.83 Typ. 1.07 1.93 0.88 1.93 0.09 0.44 Max. 1.17 2.03 0.98 2.03 V Unit V
PARAMETERS RELATED TO TEMPERATURE FUNCTION Symbol VTemp ∆VTemp Parameter Temperature output voltage (see fig. 6) Temperature output voltage variation (see fig. 6) Test conditions IDC = 50µA IDC = 50µA, 0 < Tamb < 70 °C IDC = 50µA, 2.2 < VBIAS < 3.2 V Min. 1.83 Typ. 1.93 0.09 0.44 Max. 2.03 Unit V V
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STPAC01F1
APPLICATION DIAGRAM
Coupler VBIAS RF input RF detector Low pass filter Thermal compensation STPAC01F1 IDC = 50µA GND1 GND2 IDC = 50µA
VDCOut Vtemp
+
Out
The STPAC01 is the first part of the power amplifier stage and provides both RF power and die temperature measurements. The above figure gives the basic circuit of RF detector. A coupler located on the line between RF amplifier output and the antenna takes a part of the available power and applies it to STPAC01 RF input. The RF detector and the low pass filter provide a DC voltage depending on the input power. Thermal compensation provides a DC voltage depending on the ambient temperature. As the detection system and the thermal compensation are based on the same topology, VDCout will have the same temperature variation as Vtemp. Connected to a differential amplifier, the output will be a voltage directly linked to the RF input power. VDCout and Vtemp must be bias with 50µA DC current. This topology offers the most accurate output value as it is 100% compensated. Fig. 1: VDCout measurement circuit.
Fig. 2: VDCout versus RF input power.
VDCout
RF generator
RF in
STPAC test board
VDCOut
2
Multimeter
1.8 1.6 1.4 1.2 Tamb = 25°C Ibias = 50µA Vbias = 2.7V
Power supply
VBIAS
DC output voltage
1850MHz 850MHz
Current generator
IDC
1 0.8 -20
-15
-10
-5 Pin (dBm)
0
5
10
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STPAC01F1
Fig. 3: Relative variation of VDCout versus frequency (from 800 to 900 MHz).
Fig. 4: Relative variation of VDCout versus frequency (from 1800 to 1900 MHz).
VDCout (Freq.) / VDCOut (850MHz) 1.05 1.05
VDCout (Freq.) / VDCOut (850MHz)
1
1
0.95
0.95
0.9 800
825
850 Frequency in MHz
875
900
0.9 1800
1825
1850 Frequency in MHz
1875
1900
Fig. 5: Temperature effect measurement circuit on VDCout.
Climatic chamber RF generator RF in STPAC test board VDCOut Multimeter
Fig. 6: Vtemp measurement circuit.
Climatic chamber STPAC test board Vtemp Multimeter
Power supply
VBIAS
DC output voltage Power supply VBIAS
Temp. voltage
Current generator
IDC
Current generator
IDC
Fig. 7: Vtemp output voltage versus ambient temperature.
Vtemp 1.98 Ibias = 50µA 1.96 1.94 1.92 1.9 1.88 0 10 20 30 40 50 60 70 Tamb (°C)
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STPAC01F1
PACKAGE MECHANICAL DATA
500µm ± 50 650µm ± 65 315µm ± 50 500µm ± 50
1.57mm ± 50µm
FOOT PRINT RECOMMENDATIONS
MARKING
1.57mm ± 50µm
Dot, ST logo xxx = marking yww = datecode (y = year ww = week)
Copper pad Diameter : 250µm recommended , 300µm max
365
240
365
Solder stencil opening : 330µm
Solder mask opening recommendation : 340µm min for 300µm copper pad diameter
xxx y ww
40
220
All dimensions in µm
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STPAC01F1
FLIP-CHIP TAPE AND REEL SPECIFICATION
Dot identifying Pin A1 location 4 +/- 0.1 Ø 1.5 +/- 0.1 1.75 +/- 0.1 3.5 +/- 0.1
0.73 +/- 0.05
All dimensions in mm
8 +/- 0.3
ST
ST
ST
xxx yww
User direction of unreeling
xxx yww
xxx yww
4 +/- 0.1
OTHER INFORMATION Ordering code STPAC01F1 Marking RAT Package Flip-Chip Weight 3.3 mg Base qty 5000 Delivery mode Tape & reel
Note: More packing informations are available in the application note AN1235: ''Flip-Chip: Package description and recommandations for use''
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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