STPR120A

STPR120A ® HIGH EFFICIENCY FAST RECOVERY DIODE Table 1: Main Product Characteristics IF(AV) 1A VRRM 200 V Tj (max) 150°C VF(max) 0.74 V trr (max) 35 ns ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O SMA (JEDEC DO-214AC) STPR120A FEATURES AND BENEFITS ■ ■ ■ ■ Very low switching losses Low forward voltage drop Fast rectifier Epitaxial diode Surface mount package Table 2: Order Code Part Number STPR120A DESCRIPTION Marking R12 Single chip rectifier suited to Switched Mode Power Supplies and high frequency DC/DC converters. Packaged in SMA, this surface mount device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Table 3: Absolute Ratings (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current Value Unit 200 V 8 A IF(AV) Average forward current TL = 125°C δ = 0.5 1 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 30 A Tstg Storage temperature range -65 to + 150 °C 150 °C Tj Maximum operating junction temperature August 2004 REV. 4 1/6 STPR120A Table 4: Thermal Resistance Symbol Rth(j-l) Junction to lead Parameter Value 30 Unit °C/W Table 5: Static Electrical Characteristics Symbol IR * VF ** Parameter Tests conditions Tj = 25°C VR = VRRM Reverse leakage current Tj = 125°C Forward voltage drop Tj = 25°C IF = 1A Tj = 150°C IF = 1A Min. Typ Max. 3 180 400 Unit µA 0.94 V ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Pulse test: 0.69 0.74 * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% 2 To evaluate the conduction losses use the following equation: P = 0.62 x IF(AV) + 0.12 IF (RMS) Table 6: Recovery Characteristics Symbol Parameter trr Reverse recovery time tfr Forward recovery time VFP 2/6 Forward recovery voltage Test conditions Min. Typ Max. Unit IF = 0.5A Irr = 0.25A IR =1A Tj = 25°C Tj = 25°C IF = 1A dIF/dt = 50 A/µs VR = VRRM 25 25 35 ns IF = 1A dIF/dt = 100 A/µs Measured at 1V 25 ns IF = 1A 5 V dIF/dt = 100 A/µs STPR120A Figure 1: Average forward power dissipation versus average forward current Figure 2: Peak current versus form factor IM(A) P(W) 10 1.0 δ = 0.1 0.9 0.8 δ = 0.2 δ = 0.5 9 8 δ = 0.05 0.7 δ=1 0.6 P=1.5W 7 6 0.5 5 0.4 4 P=1.0W P=0.5W P=0.25W 0.3 3 T ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 0.2 2 0.1 δ=tp/T IF(AV)(A) 1 tp 0.0 δ 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Figure 3: Average forward current versus ambient temperature (δ = 0.5) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Figure 4: Non repetitive surge peak forward current versus overload duration IF(AV)(A) IM(A) 1.2 6 1.1 Rth(j-a)=Rth(j-I) 1.0 5 0.9 0.8 4 Ta=25°C Rth(j-a)=120°C/W 0.7 0.6 3 0.5 Ta=100°C 2 0.4 T 0.3 IM Ta=125°C 1 0.2 t 0.1 δ=tp/T 0.0 0 Tamb(°C) tp 25 t(s) δ=0.5 0 50 75 100 125 150 Figure 5: Variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35µm, recommended pad layout) 1E-3 1E-2 1E-1 1E+0 Figure 6: Forward voltage drop versus forward current (maximum values) IFM(A) Zth(j-a)/Rth(j-a) 50.00 200 100 10.00 Tj=150°C Tj=25°C (maximum values) 1.00 10 0.10 Single pulse tp(s) 1 1E-3 VFM(V) 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3/6 STPR120A Figure 7: Junction capacitance versus reverse voltage applied (typical values) Figure 8: Recovery charges versus dIF/dt Qrr(nC) C(pF) 200 20 IF=2A 90% confidence Tj=125°C F=1MHz Tj=25°C 10 100 5 50 2 20 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O VR(V) dIF/dt(A/µs) 1 10 1 10 100 200 Figure 9: Peak recovery current versus dIF/dt 10 50 100 Figure 10: Dynamic junction temperature IRM(A) 200 parameters 500 versus Qrr; IRM[Tj] / Qrr; IRM[Tj=125°C] 20.0 1.25 IF=2A 90% confidence Tj=125°C 10.0 20 1.00 IRM 0.75 1.0 QRR 0.50 Tj(°C) dIF/dt(A/µs) 0.25 0.1 10 4/6 20 50 100 200 500 0 25 50 75 100 125 150 STPR120A Figure 11: SMA Package Mechanical Data DIMENSIONS REF. E1 D E Millimeters Inches Min. Max. Min. Max. A1 1.90 2.03 0.075 0.080 A2 0.05 0.20 0.002 0.008 b 1.25 1.65 0.049 0.065 c 0.15 0.41 0.006 0.016 E 4.80 5.60 0.189 0.220 E1 3.95 4.60 0.156 0.181 D 2.25 2.95 0.089 0.116 L 0.75 1.60 0.030 0.063 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O A1 A2 C L b Figure 12: SMA Foot Print Dimensions (in millimeters) 1.65 1.45 2.40 1.45 5/6 STPR120A Table 7: Ordering Information Ordering type STPR120A ■ ■ Marking R12 Package SMA Weight 0.068 g Base qty 5000 Delivery mode Tape & reel Band indicates cathode Epoxy meets UL94, V0 Table 8: Revision History Date Jul-2003 Revision 3 Aug-2004 4 Description of Changes ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Last update. SMA package dimensions update. Reference A1 max. changed from 2.70mm (0.106inc.) to 2.03mm (0.080). Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. 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