STPR1520D_01

® STPR1520D/F ULTRA-FAST RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) 15 A 200 V 150°C 0.99 V 30 ns K A A FEATURES SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY s s s s s TO-220AC STPR1520D DESCRIPTION Low cost single chip rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in TO-220AC and ISOWATT220AC, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Symbol VRRM bs O IF(AV) IFSM Tstg Tj IF(RMS) let o Repetitive peak reverse voltage RMS forward current Average forward current δ = 0.5 TO-220AC ISOWATT220AC Tc = 115°C Tc = 70°C Tp = 10 ms Sinusoidal Pr e du o (s) ct so Ob - te le ro P ISOWATT220AC STPR1520F uc d s) t( K Parameter Value 200 30 15 Unit V A A Surge non repetitive forward current Storage temperature range Maximum operating junction temperature 150 - 65 to + 150 + 150 A °C October 2001 - Ed: 3B 1/6 STPR1520D/F THERMAL RESISTANCES Symbol Rth(j-c) Junction to case Parameter TO-220AC ISOWATT220AC Value 2 4.5 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF ** Parameters Reverse leakage current Forward voltage drop Test conditions Tj = 25°C Tj = 100°C Tj = 125°C Tj = 125°C Tj = 25°C Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % Min. Typ. Max. 50 1 0.99 1.20 1.25 Unit µA mA V VR = VRRM IF = 15 A IF = 30 A IF = 30 A To evaluate the conduction losses use the following equation : P = 0.78 x IF(AV) + 0.014 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr tfr VFP Tj = 25°C Tj = 25°C Tj = 25°C Test conditions IF = 0.5A IF = 1A IF = 1A Irr = 0.25A IR = 1A tr = 10 ns VFR = 1.1 x VF tr = 10 ns Fig. 1: Average forward power dissipation versus average forward current. bs O let o Pr e du o (s) ct Ob - so te le ro P uc d 30 s) t( Unit ns Min. Typ. Max. 20 3 V Fig. 2: Peak current versus form factor. 2/6 STPR1520D/F Fig. 3: Average temperature. current versus ambient Fig. 4: Average temperature. current versus ambient Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values) (TO-220AC) Fig. 6: Non repetitive surge peak forward current versus overload duration (maximum values) (ISOWATT220AC). Fig. 7: Relative variation of thermal transient impedance junction to case versus pulse duration (TO-220AC). bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( Fig. 8: Relative variation of thermal transient impedance junction to case versus pulse duration (ISOWATT220AC). 3/6 STPR1520D/F Fig. 9: Forward voltage drop versus forward current. Fig. 10: Junction capacitance versus reverse voltage applied (typical values). Fig. 11: Recovery charge versus dIF/dt. Fig. 12: Peak reverse current versus dIF/dt. Fig. 13: Dynamic parameters versus junction temperature. bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( 4/6 STPR1520D/F PACKAGE MECHANICAL DATA TO-220AC DIMENSIONS REF. A C D E F F1 G H2 L2 L4 L5 L6 L7 L9 M Diam. I Millimeters Min. H2 C L5 ØI L6 L2 D L7 A Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.194 0.202 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 Max. L9 F1 L4 F G M E bs O let o Pr e du o (s) ct so Ob - te le 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 4.95 5.15 10.00 10.40 16.40 typ. 13.00 14.00 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 ro P uc d s) t( 5/6 STPR1520D/F PACKAGE MECHANICAL DATA ISOWATT220AC A H B DIMENSIONS REF. A B D E F F1 G H L2 L3 L6 L7 Diam Millimeters 4.40 2.50 2.40 0.40 0.75 1.15 4.95 10.00 16.00 28.60 15.90 9.00 3.00 30.60 16.40 9.30 3.20 1.125 0.626 0.354 0.118 4.60 2.70 2.75 0.70 1.00 1.70 5.20 10.40 0.173 0.098 0.094 0.016 0.030 0.045 0.195 0.394 0.630 Inches 0.181 0.106 0.108 0.028 0.039 0.067 0.205 0.409 Min. Typ. Max. Min. Typ. Max. L6 L2 L3 L7 F1 Diam F G D E bs O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( 1.205 0.646 0.366 0.126 The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia -Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6