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STPS1045F

STPS1045F

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    STPS1045F - POWER SCHOTTKY RECTIFIER - STMicroelectronics

  • 数据手册
  • 价格&库存
STPS1045F 数据手册
® STPS1045D/F POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP INSULATED PACKAGE:ISOWATT220AC Insulating voltage = 2000V DC Capacitance = 12pF 10 A 45 V 0.57 V K A A K A K TO-220AC STPS1045D ISOWATT220AC STPS1045F DESCRIPTION Single chip Schottky rectifier suited for Switch Mode Power Supply and high frequency DC to DC converters. This device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current δ = 0.5 TO-220AC ISOWATT220AC Tc = 150°C Tc = 145°C tp = 10 ms Sinusoidal tp = 2 µs F = 1KHz 180 1 - 65 to + 175 175 10000 A A °C °C V/µs 1/5 Value 45 30 10 Unit V A A IFSM IRRM Tstg Tj dV/dt Surge non repetitive forward current Repetitive peak reverse current Storage temperature range Maximum junction temperature Critical rate of rise of reverse voltage September 1999 - Ed: 3B STPS1045D/F THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case TO-220AC ISOWATT220AC STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Tests Conditions Tj = 25°C Tj = 125°C VF ** Forward voltage drop Tj = 25°C Tj = 125°C Tj = 125°C Pulse test : * tp = 5 ms,δ < 2 % ** tp = 380 µs, δ< 2% Value 2.2 4.5 Unit °C/W Min. Typ. Max. 100 15 Unit µA mA V VR = VRRM IF = 15 A IF = 15 A IF = 7.5 A 0.84 0.72 0.57 To evaluate the conduction losses use the following equation : P = 0.42 x IF(AV) + 0.015 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average current versus ambient temperature (δ : 0.5). PF(av)(W) 8 7 6 5 4 3 2 1 0 0 1 2 3 4 IF(av) (A) 5 6 7 8 9 δ=tp/T T IF(av)(A) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 12 Rth(j-a)=Rth(j-c) 10 δ=1 TO220AC 8 6 4 2 T Rth(j-a)=15°C/W ISOWATT220 tp 10 11 12 0 δ=tp/T tp Tamb(°C) 50 75 100 125 150 175 0 25 2/5 STPS1045D/F Fig. 3-1: Non repetitive surge peak forward current versus overload duration (maximum values) (TO-220AC). Fig. 3-2: Non repetitive surge peak forward current versus overload duration (maximum values) (ISOWATT220AC). IM(A) 160 140 120 100 80 60 40 20 0 1E-3 IM t Tc=50°C Tc=100°C Tc=150°C δ=0.5 t(s) 1E-2 1E-1 1E+0 IM(A) 100 90 80 70 60 50 40 30 20 IM 10 0 1E-3 Tc=50°C Tc=100°C Tc=150°C t δ=0.5 t(s) 1E-2 1E-1 1E+0 Fig. 4-1: Relative variation of thermal transient impedance junction to case versus pulse duration (TO-220AC). Fig. 4-2: Relative variation of thermal transient impedance junction to case versus pulse duration (ISOWATT220AC). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 δ = 0.5 Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 T δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.2 δ = 0.1 T 0.2 tp(s) 1E-3 1E-2 δ=tp/T tp 0.0 1E-4 Single pulse 1E-1 1E+0 0.0 1E-3 Single pulse tp(s) 1E-2 1E-1 δ=tp/T tp 1E+0 1E+1 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). Fig. 6: Junction capacitance versus reverse voltage applied (typical values). IR(µA) 1E+5 1E+4 1E+3 1E+2 1E+1 1E+0 1E-1 0 5 10 15 Tj=150°C C(pF) 1000 F=1MHz Tj=25°C Tj=125°C Tj=100°C Tj=75°C Tj=50°C Tj=25°C 500 200 VR(V) 30 35 40 45 VR(V) 20 25 100 1 2 5 10 20 50 3/5 STPS1045D/F Fig. 7: Forward voltage drop versus forward current (maximum values). IFM(A) 100.0 Tj=125°C (Typical values) 10.0 Tj=125°C Tj=25°C 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 PACKAGE MECHANICAL DATA TO-220AC DIMENSIONS REF. H2 C L5 ØI L6 L2 D L7 A Millimeters Min. Max. 4.60 1.32 2.72 0.70 0.88 1.70 5.15 10.40 14.00 2.95 15.75 6.60 3.93 3.85 4.40 1.23 2.40 0.49 0.61 1.14 4.95 10.00 13.00 2.65 15.25 6.20 3.50 3.75 Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.194 0.393 0.511 0.104 0.600 0.244 0.137 0.147 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.202 0.409 0.551 0.116 0.620 0.259 0.154 0.151 A C D E F F1 G H2 L2 L9 F1 L4 16.40 typ. 0.645 typ. F G M E L4 L5 L6 L7 L9 M Diam. I 2.6 typ. 0.102 typ. 4/5 STPS1045D/F PACKAGE MECHANICAL DATA ISOWATT220AC A H B DIMENSIONS REF. A B D L7 Millimeters Min. Typ. Max. 4.60 2.70 2.75 0.70 1.00 1.70 5.20 16.00 28.60 15.90 9.00 3.00 30.60 1.125 16.40 0.626 9.30 3.20 0.354 0.118 Min. 0.173 0.098 0.094 0.016 0.030 0.045 0.195 4.40 2.50 2.40 0.40 0.75 1.15 4.95 10.00 Inches Typ. Max. 0.181 0.106 0.108 0.028 0.039 0.067 0.205 0.409 0.630 1.205 0.646 0.366 0.0126 L6 L2 L3 Diam E F F1 G H L2 L3 L6 F1 10.40 0.394 F G D E L7 Diam Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5
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