STPS10L25G

® STPS10L25D/G LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS A n 10 A 25 V 150 °C 0.35 V A K n n VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION OPTIMIZED CONDUCTION / REVERSE LOSSES TRADE-OFF WHICH MEANS THE HIGHEST EFFICIENCY IN THE APPLICATIONS AVALANCHE CAPABILITY SPECIFIED K NC TO-220AC STPS10L25D D2PAK STPS10L25G DESCRIPTION Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters. This device is especially intended for use as a rectifier at the secondary of 3.3V SMPS units. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt *: Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 140°C δ = 0.5 tp = 10 ms Sinusoidal tp=2 µs square F=1kHz tp = 100 µs square tp = 1µs Tj = 25°C Value 25 30 10 200 1 3 5500 - 65 to + 150 150 10000 Unit V A A A A A W °C °C V/µs dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) 1/5 July 2003 - Ed : 4B STPS10L25D/G THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter Value 1.5 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Tests Conditions Reverse leakage current Tests Conditions Tj = 25°C Tj = 125°C VF * Forward voltage drop Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°Χ Pulse test: * tp = 380 µs, δ < 2% Min. Typ. Max. 800 Unit µA mA V VR = VRRM 135 IF = 10 A IF = 10 A IF = 20 A IF = 20 A 0.41 0.30 260 0.46 0.35 0.55 0.48 To evaluate the maximum conduction losses use the following equation : P = 0.22 x IF(AV) + 0.013 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 δ = 0.1 δ = 0.05 δ = 0.2 Fig. 2: Average forward current versus ambient temperature ( δ = 0.5). IF(av)(A) 12 δ = 0.5 Rth(j-a)=Rth(j-c) 10 8 δ=1 6 4 T Rth(j-a)=50°C/W T 2 IF(av) (A) 0 1 2 3 4 5 6 7 8 δ=tp/T tp δ=tp/T tp Tamb(°C) 50 75 100 125 150 0 9 10 11 0 25 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1µs) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 0 25 50 75 100 125 150 2/5 STPS10L25D/G Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 200 180 160 140 120 100 80 60 IM 40 20 0 1E-3 Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 Tc=25°C Tc=75°C 0.6 0.4 δ = 0.5 Tc=100°C t δ = 0.2 T 0.2 t(s) 1E-2 1E-1 1E+0 δ = 0.1 δ=0.5 Single pulse tp(s) 1E-2 δ=tp/T tp 0.0 1E-4 1E-3 1E-1 1E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). IR(mA) 5E+2 1E+2 Tj=125°C Tj=150°C Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(nF) 5.0 F=1MHz Tj=25°C 1E+1 1.0 1E+0 1E-1 1E-2 Tj=25°C VR(V) 0 5 10 15 20 25 0.1 VR(V) 1 2 5 10 20 30 Fig. 9: Forward voltage drop versus forward current (maximum values). Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness : 35 µm). (STPS10L25G only) Rth(j-a) (°C/W) 80 70 100.0 IFM(A) 10.0 Typical values Tj=150°C Tj=125°C 60 50 40 30 20 10 0 0 4 8 12 1.0 Tj=25°C VFM(V) 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 S(Cu) (cm²) 16 20 24 28 32 36 40 3/5 STPS10L25D/G PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. A E L2 C2 Millimeters Min. Max. 4.40 4.60 2.49 2.69 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 1.36 8.95 9.35 10.00 10.40 4.88 5.28 15.00 15.85 1.27 1.40 1.40 1.75 2.40 3.20 0.40 typ. 0° 8° Inches Min. Max. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.045 0.067 0.017 0.024 0.048 0.054 0.352 0.368 0.393 0.409 0.192 0.208 0.590 0.624 0.050 0.055 0.055 0.069 0.094 0.126 0.016 typ. 0° 8° D L L3 A1 B2 B G A2 C R M * V2 A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 * FLAT ZONE NO LESS THAN 2mm FOOT PRINT DIMENSIONS (in millimeters) n Cooling method: by conduction (method C) 16.90 10.30 1.30 5.08 3.70 8.90 4/5 STPS10L25D/G PACKAGE MECHANICAL DATA TO-220AC DIMENSIONS REF. H2 C L5 ØI L6 L2 D L7 A Millimeters Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 4.95 5.15 10.00 10.40 16.40 typ. 13.00 14.00 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.194 0.202 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 L9 F1 L4 F G M E A C D E F F1 G H2 L2 L4 L5 L6 L7 L9 M Diam. I n n n Cooling method : C Recommended torque value : 0.55 m.N Maximum torque value : 0.70 m.N Ordering type STPS10L25D STPS10L25G STPS10L25G-TR Marking STPS10L25D STPS10L25G STPS10L25G Package TO-220AC D2PAK D2PAK Weight 1.86g 1.48g 1.48g Base qty 50 50 1000 Delivery mode Tube Tube Tape & reel n Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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