STPS10L60CF

® STPS10L60CF/CFP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS s A1 K A2 2x5A 60 V 150 °C 0.52 V s s s LOW FORWARD VOLTAGE DROP NEGLIGIBLE SWITCHING LOSSES INSULATED PACKAGE: Insulating voltage = 2000V DC Capacitance = 12pF AVALANCHE CAPABILITY SPECIFIED A2 A1 K A2 K A1 ISOWATT220AB STPS10L60CF TO-220FPAB STPS10L60CFP DESCRIPTION Dual center tap Schottky rectifiers suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in ISOWATT220AB, TO-220FPAB this device is intended for use in high frequency inverters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM PARM Tstg Tj dV/dt *: Parameter Repetitive peak reverse voltage RMS forward current Average forward current ISOWATT220AB TO220FPAB Tc =130°C δ = 0.5 Per diode Per device Value 60 30 5 10 180 1 4000 - 65 to + 175 150 10000 Unit V A A A A W °C °C V/µs Surge non repetitive forward current Repetitive peak reverse current Repetitive peak avalanche power Storage temperature range tp = 10 ms Sinusoidal tp = 2 µs square F = 1kHz tp = 1µs Tj = 25°C Maximum operating junction temperature * Critical rate of rise reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) 1/5 July 2003 - Ed: 3C STPS10L60CF/CFP THERMAL RESISTANCE Symbol Rth (j-c) Rth (c) Parameter Junction to case ISOWATT220AB TO-220FPAB Per Diode Total Coupling Value 4.5 3.5 2.5 Unit °C/W °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Tests conditions Tj = 25°C Tj = 125°C VF * Forward voltage drop Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : * tp = 380 µs, δ < 2% Min. Typ. Max. 220 Unit µA mA V VR = VRRM 45 IF = 5 A IF = 5 A IF = 10 A IF = 10 A 0.55 0.43 60 0.55 0.52 0.67 0.64 To evaluate the conduction losses use the following equation : P = 0.4x IF(AV) + 0.024 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) δ = 0.05 δ=1 Fig. 2: Average current versus temperature (δ=0.5) (per diode). IF(av)(A) 6 Rth(j-a)=Rth(j-c) ambient 3.5 3.0 2.5 2.0 δ = 0.1 δ = 0.2 δ = 0.5 5 4 3 Rth(j-a)=15°C/W 1.5 1.0 0.5 T 2 1 δ=tp/T T IF(av) (A) δ=tp/T tp tp Tamb(°C) 50 75 100 125 150 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 0 25 2/5 STPS10L60CF/CFP Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1µs) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 0 25 50 75 100 125 150 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (ISOWATT220AB, TO-220FPAB). IM(A) Fig. 6: Relative variation of thermal transient impedance junction to case versus pulse duration. (ISOWATT220AB, TO-220FPAB). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 δ = 0.5 90 80 70 60 50 40 30 20 10 Tc=25°C Tc=75°C IM t δ = 0.2 T Tc=125°C 0.2 δ = 0.1 Single pulse 0 1E-3 δ=0.5 t(s) 1E-2 1E-1 1E+0 tp(s) 1E-2 1E-1 δ=tp/T tp 0.0 1E-3 1E+0 1E+1 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(mA) Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 1000 3E+2 1E+2 1E+1 1E+0 Tc=150°C F=1MHz Tj=25°C Tc=125°C 500 Tc=100°C Tc=75°C 1E-1 1E-2 Tc=50°C Tc=25°C 200 VR(V) 1E-3 0 5 10 15 20 25 30 35 40 45 50 55 60 100 1 VR(V) 10 100 3/5 STPS10L60CF/CFP Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 100.0 Tj=150°C (typical values) Tj=25°C 10.0 1.0 Tj=125°C VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam s Millimeters Min. Max. 4.40 4.60 2.50 2.70 2.50 2.75 0.40 0.70 0.75 1.00 1.15 1.70 1.15 1.70 4.95 5.20 2.40 2.70 10.00 10.40 16.00 Typ. 28.60 30.60 9.80 10.60 15.90 16.40 9.00 9.30 3.00 3.20 Inches Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.016 0.028 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.394 0.409 0.630 Typ. 1.125 1.205 0.386 0.417 0.626 0.646 0.354 0.366 0.118 0.126 s s Cooling method: C Recommended torque value: 0.55 m.N Maximum torque value: 0.70 m.N 4/5 STPS10L60CF/CFP PACKAGE MECHANICAL DATA TO-220FPAB REF. DIMENSIONS Millimeters A H B Inches Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.018 0.027 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.393 0.409 0.63 Typ. 1.126 1.205 0.386 0.417 0.114 0.142 0.626 0.646 0.354 0.366 0.118 0.126 Dia L6 L2 L3 L5 D F1 L4 F2 L7 F G1 G E A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. Min. Max. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.70 0.75 1 1.15 1.70 1.15 1.70 4.95 5.20 2.4 2.7 10 10.4 16 Typ. 28.6 30.6 9.8 10.6 2.9 3.6 15.9 16.4 9.00 9.30 3.00 3.20 Ordering type STPS10L60CF STPS10L60CF STPS10L60CFP s Marking STPS10L60CF STPS10L60CF STPS10L60CFP Package ISOWATT220AB ISOWATT220AB TO-220FPAB Weight 2.08g 2.08g 2g Base qty 50 1000 50 Delivery mode Tube Bulk Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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