STPS1100U

® STPS1100U POWER SCHOTTKY RECTIFIERS MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF (max) FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW CAPACITANCE HIGH REVERSE AVALANCHE SURGE CAPABILITY DESCRIPTION High voltage Schottky rectifier suited for SLIC protection during the card insertion operation. 1.5 A 100 V 0.70 V SMB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive Peak Reverse Voltage RMS Forward Current Average Forward Current TL = 90°C δ = 0.5 VR = 60V tp = 10 ms Sinusoidal tp = 2 µs F = 1KHz tp = 100 µs Value 100 10 1.5 Unit V A A IFSM IRRM IRSM Tstg Tj dV/dt Surge Non Repetitive Forward Current Peak Repetitive Reverse Current Non Repetitive Peak Reverse Current Storage Temperature Range Max. Operating Junction Temperature Critical Rate of Rise of Reverse Voltage 75 1 1 - 65 to + 150 115 1000 A A A °C V/µs April 1997 - Ed: 3 1/5 STPS1100U THERMAL RESISTANCE Symbol Rth (j-I) Junction-leads Parameter Value 20 Unit °C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 25°C Tj = 100°C Tj = 100°C IF = 100 mA IF = 3 A IF = 1.5 A IF = 3 A 0.57 0.67 VR = VRRM 1 Min. Typ. Max. 30 5 0.43 0.95 0.71 0.85 Unit µA mA V VF ** Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2% To evaluate the conduction losses use the following equation: P = 0.65 x IF(AV) + 0.067 IF2(RMS) Typical junction capacitance, VR = 0V F = 1MHz Tj = 25°C C = 365pF Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature (δ=0.5). PF(av)(W) 1.4 IF(av)(A) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 1.2 1.0 0.8 δ=1 0.6 0.4 0.2 IF(av) (A) 0.2 0.4 0.6 0.8 1.0 1.2 δ=tp/T T tp 0.0 0.0 1.4 1.6 1.8 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Rth(j-a)=Rth(j-l) Rth(j-a)=100°C/W T δ=tp/T tp Tamb(°C) 0 10 20 30 40 50 60 70 80 90 100 110 120 2/5 ® STPS1100U Fig. 3: Non repetitive surge peak forward current versus overload duration; device mounted on printed circuit board S(Cu)=1cm2 (maximum values). Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. IM(A) 10 9 8 7 6 5 4 3 IM 2 1 0 0.001 Ta=25°C Ta=50°C t δ=0.5 t(s) 0.010 Ta=100°C 0.100 1.000 Zth(j-a)/Rth(j-a) 1.0 Printed circuit board: SCu=1cm² (e=35 µm) 0.9 0.8 0.7 0.6 δ = 0.5 0.5 0.4 0.3 δ = 0.2 0.2 δ = 0.1 0.1 tp Single pulse 0.0 1.0E-2 1.0E-1 1.0E+0 1.0E+1 T δ=tp/T tp 1.0E+2 1.0E+3 Fig. 5: Variation of thermal resistance junction to ambient versus copper surface under each lead. Fig. 6: Reverse leakage current versus reverse voltage applied (typical values). Rth(j-a) (°C/W) 100 90 80 70 60 50 40 30 20 0.0 1.0 S(Cu) (cm²) 2.0 3.0 4.0 5.0 1.0E+0 1.0E-1 1.0E+2 P=1.5W Printed circuit board epoxy (Cu thickness:35 µm) IR(µA) 1.0E+3 Tj=100°C Tj=75°C 1.0E+1 Tj=25°C VR(V) 0 10 20 30 40 50 60 70 80 90 100 3/5 ® STPS1100U Fig. 7: Junction capacitance versus reverse voltage applied (typical values). Fig. 8: Forward voltage drop versus forward current (maximum values). C(pF) 200 F=1MHz Tj=25°C VFM(V) 1.6 1.4 1.2 1.0 0.8 0.6 Tj=25°C 100 50 20 VR(V) 0.4 0.2 IFM(A) 1E-3 1E-2 1E-1 0.0 1E-4 Tj=100°C 10 1 2 5 10 20 50 100 1E+0 1E+1 4/5 ® STPS1100U PACKAGE MECHANICAL DATA SMB (plastic) DIMENSIONS E REF. Millimeters Min. Max. 2.62 0.20 2.11 0.35 3.93 5.59 4.30 1.27 2.41 2.13 Inches Min. 0.096 0.004 0.077 0.010 0.143 0.212 0.163 0.039 0.092 0.080 Max. 0.103 0.008 0.083 0.014 0.155 0.220 0.170 0.050 0.095 0.084 B C J F A H A a1 B b1 C D E F H J 2.44 0.10 1.96 0.25 3.65 5.39 4.15 1.00 2.33 2.05 a1 D b1 FOOTPRINT DIMENSIONS (in millimeters) SMB (plastic) Voltage (V) Marking 100 E11 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 ®