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STPS1545CF

STPS1545CF

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    STPS1545CF - POWER SCHOTTKY RECTIFIER - STMicroelectronics

  • 数据手册
  • 价格&库存
STPS1545CF 数据手册
® STPS1545CT/CF/CG POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 2 x 7.5 A 45 V 175 °C 0.57 V K A1 K A2 FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING INSULATED PACKAGE: ISOWATT220AB Insulating voltage = 2000V DC Capacitance = 12pF DESCRIPTION Dual center tap Schottky rectifier suited for SwitchMode Power Supply and high frequency DC to DC converters. Packaged either in TO-220AB, ISOWATT220AB or D2PAK, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current δ = 0.5 TO-220AB / D2PAK Tc = 157 °C Per diode Per device Parameter Repetitive peak reverse voltage Value 45 20 7.5 15 150 1 2 -65 to +175 175 10000 A A A °C °C V/µs Unit V A A A2 A1 K A2 A1 K TO-220AB STPS1545CT K ISOWATT220AB STPS1545CF A2 A1 D2PAK STPS1545CG ISOWATT220AB Tc = 130 °C IFSM IRRM IRSM Tstg Tj dV/dt *: Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage tp = 10 ms Sinusoidal tp = 2 µs square F = 1kHz tp = 100 µs square 1 dPtot thermal runaway condition for a diode on its own heatsink < Rth(j−a) dTj 1/7 June 1999 - Ed: 4B STPS1545CT/CF/CG THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter TO-220AB / D2PAK ISOWATT220AB Rth (c) TO-220AB / D2PAK ISOWATT220AB When the diodes 1 and 2 are used simultaneously: ∆ Tj (diode 1) = P (diode1)x Rth(j-c) (per diode) + P (diode 2) x Rth(c) Per diode Total Per diode Total Coupling Value 3.0 1.7 5.5 4.2 0.35 2.9 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS (Per diode) Symbol IR * Parameter Reverse leakage current Tests Conditions Tj = 25°C Tj = 125°C VF * Forward voltage drop Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : * tp = 380 µs, δ < 2% Min. Typ. Max. 100 Unit µA mA V VR = VRRM 5 IF = 7.5 A IF = 15 A IF = 15 A 0.65 0.5 15 0.57 0.84 0.72 To evaluate the conduction losses use the following equation : P = 0.42 x IF(AV) + 0.020 IF2(RMS) 2/7 STPS1545CT/CF/CG Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average current versus ambient temperature (δ = 0.5, per diod e). PF(av)(W) 6 5 4 3 2 1 IF(av) (A) 0 0 1 2 3 4 5 6 7 δ=tp/T tp T δ = 0.05 δ= 1 δ = 0.1 δ = 0.2 δ = 0.5 IF(av)(A) 9 8 7 6 5 4 3 2 1 0 Rth(j-a)=Rth(j-c) ISOWATT220AC Rth(j-a)=15°C/W Rth(j-a)=40°C/W TO-220A C D PAK T 8 9 10 δ=tp/T tp Tamb(°C) 50 75 100 125 150 175 0 25 Fig. 3-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB and D2PAK). Fig. 3-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (ISOWATT220AB). IM(A) 120 100 80 60 40 IM IM(A) 80 70 60 50 Tc=50°C Tc=100°C Tc=50°C Tc=100°C 40 30 20 10 0 1E-3 IM t Tc=150°C 20 0 1E-3 Tc=150°C t δ=0.5 t(s) 1E-2 1E-1 1E+0 δ=0.5 t(s) 1E-2 1E-1 1E+0 Fig. 4-1: Relative variation of thermal transient impedance junction to case versus pulse duration (per diode) (TO-220AB and D2PAK). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 δ = 0.2 δ = 0.5 Fig. 4-2: Relative variation of thermal transient impedance junction to case versus pulse duration (per diode) (ISOWATT220AB). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 δ = 0.5 T 0.2 δ = 0.1 0.2 tp(s) 1E-3 1E-2 δ=tp/T tp δ = 0.2 δ = 0.1 Single pulse T Single pulse tp(s) 1E-1 0.0 1E-4 1E-1 1E+0 0.0 1E-3 δ=tp/T tp 1E-2 1E+0 1E+1 3/7 STPS1545CT/CF/CG Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). IR(µA) 5E+4 1E+4 1E+3 1E+2 1E+1 Tj=25°C Tj=150°C Tj=125°C Tj=100°C Tj=75°C Tj=50°C C(pF) 1000 F=1MHz Tj=25°C 500 200 VR(V) 30 35 40 45 1E+0 1E-1 VR(V) 0 5 10 15 20 25 100 1 2 5 10 20 50 Fig. 7: Forward voltage drop versus forward current (maximum values, per diode). Fig. 8: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness: 35µm). Rth(j-a) (°C/W) 80 IFM(A) 100.0 Tj=125°C Typical values 70 Tj=25°C 60 50 40 10.0 Tj=125°C 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 30 20 10 0 0 2 4 6 S(Cu) (cm ) 8 10 12 14 16 18 20 4/7 STPS1545CT/CF/CG PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. A E L2 C2 Millimeters Min. Max. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 1.40 1.75 3.20 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 10.00 4.88 15.00 1.27 1.40 2.40 Inches Min. 0.173 0.098 0.001 0.027 0.045 0.017 0.048 0.352 0.393 0.192 0.590 0.050 0.055 0.094 Max. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.409 0.208 0.624 0.055 0.069 0.126 A A1 A2 D L L3 A1 B2 B G A2 C R B B2 C C2 D E G L L2 L3 M * V2 M R V2 * FLAT ZONE NO LESSTHAN 2mm 0.40 typ. 0° 8° 0.016 typ. 0° 8° FOOTPRINT DIMENSIONS (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 5/7 STPS1545CT/CF/CG PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. A C H2 Dia L5 C A Millimeters Min. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 13 2.65 15.25 6.20 3.50 3.75 Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 14 2.95 15.75 6.60 3.93 3.85 Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.511 0.104 0.600 0.244 0.137 0.147 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 0.551 0.116 0.620 0.259 0.154 0.151 D E F F1 F2 G L7 L6 L2 F2 F1 L9 L4 F G1 G M E D G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 16.4 typ. 0.645 typ. 2.6 typ. 0.102 typ. 6/7 STPS1545CT/CF/CG PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. Millimeters Min. A B D E F F1 F2 G G1 H L2 L3 L4 L6 4.40 2.50 2.50 0.40 0.75 1.15 1.15 4.95 2.40 10.00 28.60 9.80 15.90 Max. 4.60 2.70 2.75 0.70 1.00 1.70 1.70 5.20 2.70 10.40 30.60 10.60 16.40 Inches Min. 0.173 0.098 0.098 0.016 0.030 0.045 0.045 0.195 0.094 0.394 1.125 0.386 0.626 Max. 0.181 0.106 0.108 0.028 0.039 0.067 0.067 0.205 0.106 0.409 1.205 0.417 0.646 16.00 typ. 0.630 typ. Type STPS1545CT STPS1545CF STPS1545CG Marking STPS1545CT Package TO-220AB Weight 2.23 g. 2.08 g. 1.48 g. 1.48 g. Base qty 50 50 50 1000 Delivery mode Tube Tube Tube Tape & reel STPS1545CF ISOWATT220AB STPS1545CG D2PAK D2PAK STPS1545CG-TR STPS1545CG Cooling method: by conduction (C) Expoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7
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