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STPS15H100CBY-TR

STPS15H100CBY-TR

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO-252

  • 描述:

    DIODE ARRAY SCHOTTKY 100V DPAK

  • 数据手册
  • 价格&库存
STPS15H100CBY-TR 数据手册
STPS15H100C-Y Datasheet Automotive high voltage power Schottky rectifier Features A1 K A2 K • • • • • • • AEC-Q101 qualified Negligible switching losses Low leakage current Good trade-off between leakage current and forward voltage drop Low thermal resistance Avalanche capability specified PPAP capable A1 Description A2 Dual center tab Schottky rectifier suited for switched mode power supply and high frequency DC to DC converters. DPAK Packaged in DPAK, the STPS15H100C-Y is intended for use in high frequency LED head lamp circuits for automotive applications. Product status STPS15H100C-Y Product summary Symbol Value IF(AV) 2 x 7.5 A VRRM 100 V T j(max.) 175 °C VF(max.) 0.67 V DS6880 - Rev 2 - April 2018 For further information contact your local STMicroelectronics sales office. www.st.com STPS15H100C-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values, per diode, at 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) Forward rms current 10 A Tc = 150 °C, δ = 0.5 square wave Per diode 7.5 Tc = 145 °C, δ = 0.5 square wave Per device 15 IF(AV) Average forward current IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 75 A PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 475 W Storage temperature range -65 to +175 °C Operating junction temperature range(1) -40 to +175 °C Tstg Tj A 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameters Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Max. value Per diode Unit 4 Total 2.4 °C/W 0.7 When the diodes 1 and 2 are used simultaneously : Δ Tj(diode 1) = P(diode1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c) Table 3. Static electrical characteristics (per diode) Symbol IR(1) Parameter Reverse leakage current Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VF(2) Forward voltage drop Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VR = VRRM IF = 7.5 A IF = 12 A IF = 15 A Min. Typ. - 1.3 - 0.62 3 µA 4 mA 0.67 0.85 0.68 - Unit 0.8 - Max. 0.73 V 0.89 0.71 0.76 1. tp = 5 ms, δ < 2% 2. tp = 380 μs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.58 x IF(AV) + 0.012 x IF2(RMS) DS6880 - Rev 2 page 2/9 STPS15H100C-Y Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current (per diode) 7 PF(AV) (W) Figure 2. Average forward current versus ambient temperature (δ = 0.5, per diode) 9 δ=1 6 IF(AV)(A) 8 δ = 0.5 Rth(j-a) = Rth(j-c) 7 5 6 δ = 0.2 4 δ = 0.1 5 δ = 0.05 4 3 Rth(j-a) = 70 °C/W 3 2 T 2 1 IF(AV)(A) 0 T 1 tp δ =tp/T 0 1 2 3 4 5 6 7 8 9 Figure 3. Normalized avalanche power derating versus pulse duration (Tj = 125 °C) 1 PARM (t p ) PARM (10 µs) 0 Tamb(°C) tp δ =tp/T 0 25 50 75 100 125 150 175 Figure 4. Relative variation of thermal impedance junction to case versus pulse duration 1.0 Zth(j-c)/Rth(j-c) 0.9 0.8 0.7 0.1 δ = 0.5 0.6 0.5 0.01 0.4 δ = 0.2 0.3 δ = 0.1 T 0.2 t p(µs) 0.1 0.001 1 10 100 Single pulse 1.E-03 Figure 5. Reverse leakage current versus reverse voltage applied (typical values, per diode) 1.E+01 IR(mA) 1.E-02 1.E-01 tp 1.E+00 Figure 6. Junction capacitance versus reverse voltage applied (typical values, per diode) 1.0 C(nF) Tj = 150 °C 1.E+00 δ =tp/T tp(s) 0.0 1000 F = 1 MHz Vosc = 30 mV Tj = 25 °C Tj = 125 °C Tj = 100 °C 1.E-01 0.1 Tj = 75 °C 1.E-02 Tj = 50 °C 1.E-03 Tj = 25 °C VR(V) 1.E-04 0 DS6880 - Rev 2 10 20 30 40 50 60 70 80 90 100 VR(V) 0.0 1 10 100 page 3/9 STPS15H100C-Y Characteristics (curves) Figure 7. Forward voltage drop versus forward current (per diode) 100 Figure 8. Thermal resistance junction to ambient versus copper surface under tab 100 IF (A) Rth(j-a) (°C/W) DPAK 90 80 Tj = 125 °C (Maximum values) 70 60 50 Tj = 125 °C (Typical values) 10 Tj = 25 °C (Maximum values) 40 30 Epoxy printed board FR4, eCu= 35 µm 20 10 VFM(V) 1 0.0 DS6880 - Rev 2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 SCu (cm²) 0 5 10 15 20 25 30 35 40 1.6 page 4/9 STPS15H100C-Y Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 DPAK package information • • Epoxy meets UL94, V0 Lead-free packages Figure 9. DPAK package outline A E c2 b4 E1 L2 D1 H D L4 A1 b (2x) e R e1 c Seating plane A2 (L1) L V2 0.25 DS6880 - Rev 2 Gauge plane page 5/9 STPS15H100C-Y DPAK package information Table 4. DPAK mechanical data Dimensions Dim. Millimeters Min. Inches Typ. Max. Min. Typ. Max. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b4 5.20 5.40 0.205 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 D1 4.95 5.25 0.195 E 6.40 6.60 0.252 E1 4.60 4.70 4.80 0.181 0.185 0.189 e 2.16 2.28 2.40 0.085 0.090 0.094 e1 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L 1.00 1.50 0.039 0.059 (L1) 2.60 2.80 3.00 0.102 0.110 0.118 L2 0.65 0.80 0.95 0.026 0.031 0.037 L4 0.60 1.00 0.024 R V2 5.10 0.201 0.207 0.260 0.039 0.20 0.008 0° 8° 0° 8° Figure 10. DPAK recommended footprint (dimensions are in mm) 6.3 6.1 10.7 2.8 1.8 min. B 1.5 4.572 A The device must be positioned within DS6880 - Rev 2 page 6/9 STPS15H100C-Y Ordering Information 3 Ordering Information Table 5. Ordering information DS6880 - Rev 2 Order code Marking Package Weight Base qty. Delivery mode STPS15H100CBY-TR S15 H100Y DPAK 0.30 g 2500 Tape and reel page 7/9 STPS15H100C-Y Revision history Table 6. Document revision history Date Version 04-Nov-2011 1 Initial release. 2 Updated Figure 3. Normalized avalanche power derating versus pulse duration (Tj = 125 °C), Table 1. Absolute ratings (limiting values, per diode, at 25 °C unless otherwise specified) and Section ● Description. 16-Apr-2018 Changes Removed figure 4. DS6880 - Rev 2 page 8/9 STPS15H100C-Y IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS6880 - Rev 2 page 9/9
STPS15H100CBY-TR 价格&库存

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STPS15H100CBY-TR
  •  国内价格
  • 1+3.97440
  • 10+3.87720
  • 30+3.80160
  • 100+3.72600

库存:336

STPS15H100CBY-TR
  •  国内价格
  • 1+3.73040

库存:50