STPS15L30CDJFTR

STPS15L30CDJF Datasheet 30 V, 15 A high efficiency PowerFLAT power Schottky diode Features • • • • • • • • • Low forward voltage drop Very low conduction losses Negligible switching losses Extremely fast switching Low thermal resistance Avalanche rated High integration Thin package: 1 mm ECOPACK2 compliant Applications • • • • Switching diode SMPS DC/DC converter Telecom power Description Product status link STPS15L30CDJF Product summary Symbol Value IF(AV) 2 X 7.5 A VRRM 30 V Tj (max.) 150 °C VF (typ.) 0.34 V This dual center tap Schottky rectifier is ideally suited for switch mode power supply and high frequency DC to DC converters. Packaged in PowerFLAT 5x6, the STPS15L30CDJF is optimized for use in low voltage high frequency inverters, free-wheeling and polarity protection applications. Its low profile was especially designed to be used in applications with space-saving constraints. DS6250 - Rev 5 - March 2023 For further information contact your local STMicroelectronics sales office. www.st.com STPS15L30CDJF Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 30 V IF(RMS) Forward rms current 10 A Tc = 140 °C Per diode 7.5 Tc = 135 °C Per device 15 IF(AV) Average forward current, δ = 0.5 square wave IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 75 A PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 200 W -65 to +175 °C +150 °C Tstg Tj Storage temperature range Maximum operating junction temperature(1) A 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameters Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Max. Per diode 2.5 Per device 1.6 Unit °C/W 0.7 When the diodes 1 and 2 are used simultaneously : Δ Tj(diode 1) = P(diode1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c) For more information, please refer to the following application note : • AN5046: Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT packages Table 3. Static electrical characteristics (per diode) Symbol IR(1) Parameter Reverse leakage current Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C VF(1) Forward voltage drop Tj = 125 °C Tj = 25 °C Tj = 125 °C VR = 30 V IF = 7.5 A IF = 15 A Min. Typ. - 70 - Unit 1 mA 140 mA 0.48 0.34 - Max. 0.39 0.57 0.44 V 0.51 1. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.27 x IF(AV) + 0.016 x IF2(RMS) For more information, please refer to the following application notes related to the power losses: • • DS6250 - Rev 5 AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses in a power diode page 2/9 STPS15L30CDJF Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current (per diode) 4.5 Figure 2. Average forward current versus ambient temperature (δ = 0.5, per diode) PF(AV)(W) IF(AV)(A) 9 δ=1 δ = 0.5 4.0 3.5 7 δ = 0.2 3.0 6 δ = 0.1 δ = 0.05 2.5 Rth(j-a) = Rth(j-c) 8 5 2.0 4 3 1.5 T 1.0 0.5 I F(AV) (A ) T 2 1 tp δ=tp/T Tamb(°C) tp δ=tp/T 0 0.0 0 1 2 3 4 5 6 7 8 9 10 Figure 3. Normalized avalanche power derating versus pulse duration 1 PARM (t p ) PARM (10 µs) 0 25 50 75 100 125 150 Figure 4. Relative variation of thermal impedance junction to case versus pulse duration 1.0 Z th (j-c ) /R th (j-c ) 0.9 0.8 0.7 0.1 0.6 0.5 0.4 0.01 0.3 0.2 0.001 tp (s ) 0.0 1 10 100 1000 Figure 5. Reverse leakage current versus reverse voltage applied (typical values, per diode) 1.E+03 Single pulse 0.1 t p(µs) IR(mA) 1.E-05 1.E-04 1.E-03 1.E-02 1.E+00 Figure 6. Junction capacitance versus reverse voltage applied (typical values, per diode) 1000 C(pF) F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C TC = 150 °C 1.E+02 1.E-01 TC = 125 °C TC = 100 °C 1.E+01 TC = 75 °C 1.E+00 TC = 50 °C 1.E-01 TC = 25 °C VR(V) 0 DS6250 - Rev 5 5 10 15 20 25 VR(V) 100 1.E-02 30 1 10 100 page 3/9 STPS15L30CDJF Characteristics (curves) Figure 7. Forward voltage drop versus forward current (per diode) 20 Figure 8. Thermal resistance junction to ambient versus copper surface under tab (typical values) I FM(A ) Rth(j-a)(°C/W) 120 18 T j = 25 °C (Max im u m valu es ) 16 PowerFlat_5X6 epoxy printed board FR4, ecu = 70 µm 100 14 80 12 T j = 125 °C 10 (Max im u m valu es ) 8 60 T j = 125 °C (Ty p ic al valu es ) 6 40 4 20 SCu(cm²) 2 V FM 0 0.0 DS6250 - Rev 5 0.1 0.2 0.3 0.4 0.5 (V ) 0 0 1 2 3 4 5 6 7 8 9 10 0.6 page 4/9 STPS15L30CDJF Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 PowerFLAT 5x6 package information • • Epoxy meets UL 94,V0 Cooling method: by conduction (C) Figure 9. PowerFLAT 5x6 package outline (non-contractual) Bottom view Side view Top view Note: DS6250 - Rev 5 This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed. page 5/9 STPS15L30CDJF PowerFLAT 5x6 package information Table 4. PowerFLAT 5x6 mechanical data Dimensions Ref Millimeters Min. Typ. Inches (for reference only) Max. Min. Typ. Max. A 0.80 1.00 0.031 0.039 A1 0.00 0.05 0.000 0.002 b 0.30 0.50 0.01 0.02 c 0.25 0.010 D 4.80 5.40 0.189 0.212 D2 3.91 4.45 0.154 0.175 e 1.27 0.050 E 5.90 6.35 0.232 0.250 E2 3.34 3.70 0.138 0.146 L 0.50 0.80 0.020 0.031 K 1.10 1.575 0.015 0.023 L1 0.05 0.25 0.002 0.15 0.006 0.009 Figure 10. PowerFLAT 5x6 recommended footprint (dimensions are in mm) Note: DS6250 - Rev 5 For packing information, please refer to TN1173. page 6/9 STPS15L30CDJF Ordering information 3 Ordering information Table 5. Ordering information DS6250 - Rev 5 Order code Marking Package Weight Base qty. Delivery mode STPS15L30CDJFTR PS15 L30C PowerFLAT 5x6 0.095 g 3000 Tape and reel page 7/9 STPS15L30CDJF Revision history Table 6. Document revision history Date Revision Changes 13-May-2009 1 First issue. 09-Nov-2009 2 Updated Table 1. 30-Jul-2010 3 Replace Power QFN with PowerFLAT. Updated Figure 9. Added reference E in Table 5. Updated package graphics. 18-May-2011 4 Removed dash from order code and updated marking in Table 6. Added Figure 12. 15-Mar-2023 DS6250 - Rev 5 5 Updated cover image and Section 2.1 PowerFLAT 5x6 package information. page 8/9 STPS15L30CDJF IMPORTANT NOTICE – READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. 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