STPS15L45CBY-TR

STPS15L45C-Y Datasheet Automotive 45 V low drop power Schottky rectifier Features A1 K A2 K A1 K A2 • • • • • • • AEC-Q101 qualified Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop Avalanche capability specified PPAP capable • ECOPACK®2 compliant component DPAK Applications • • • • DC/DC converters Reverse polarity protection Freewheeling diodes Switching diodes Description Product status link STPS15L45C-Y Dual center tab Schottky rectifier suited for SMPS and high frequency DC to DC converters. Packaged in DPAK, the STPS15L45C-Y is intended for use in low voltage, high frequency inverters, freewheeling and polarity protection for automotive application. Product summary Symbol Value IF(AV) 2 x 7.5 A VRRM 45 V T j(max.) 150 °C VF(typ.) 0.40 V DS7145 - Rev 3 - November 2018 For further information contact your local STMicroelectronics sales office. www.st.com STPS15L45C-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values, per diode, at 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V IF(RMS) Forward rms current 10 A Per diode 7.5 Per device 15 Surge non repetitive forward current tp = 10 ms sinusoidal 75 A Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 266 W IF(AV) Average forward current IFSM PARM Tstg Tj Tc = 140 °C, δ = 0.5 square wave A Storage temperature range -65 to +175 °C Operating junction temperature range(1) -40 to +150 °C 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameters Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Max. value Per diode Unit 4 Total 2.4 °C/W 0.7 When the diodes 1 and 2 are used simultaneously : Δ Tj(diode 1) = P(diode1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c) Table 3. Static electrical characteristics (per diode) Symbol IR(1) Parameter Reverse leakage current Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VF(1) Forward voltage drop Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VR = VRRM IF = 7.5 A IF = 12 A IF = 15 A Min. Typ. - 60 - 0.40 500 µA 120 mA 0.46 0.60 0.49 - Unit 0.52 - Max. 0.57 V 0.64 0.53 0.63 1. tp = 380 μs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.29 x IF(AV) + 0.023 x IF2(RMS) DS7145 - Rev 3 page 2/10 STPS15L45C-Y Characteristics For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode DS7145 - Rev 3 page 3/10 STPS15L45C-Y Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current (per diode) Figure 2. Average forward current versus ambient temperature (δ = 0.5, per diode) IF(AV) (A) PF(AV) (W) 5.5 δ = 0.5 5.0 Rth(j-a) = Rth(j-c) δ = 0.2 4.5 4.0 δ = 0.1 δ = 0.05 δ=1 3.5 3.0 2.5 Rth(j-a) = 70 °C/W 2.0 1.5 T 1.0 0.5 0.0 IF(AV) (A) 0 1 2 3 4 5 6 7 8 9 Figure 3. Normalized avalanche power derating versus pulse duration (Tj = 125 °C) 1 0 10 Tamb(°C) tp δ = tp/T tp δ = tp/T 25 50 75 100 125 150 Figure 4. Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) PARM (t p ) PARM (10 µs) 1.0 0.9 0.8 0.7 0.1 δ = 0.5 0.6 0.5 0.01 0.4 δ = 0.2 0.3 δ = 0.1 T 0.2 0.001 0.1 t p(µs) 1 DS7145 - Rev 3 10 100 1000 tp(s) Single pulse 0.0 1.E-03 1.E-02 δ = tp/T 1.E-01 tp 1.E+00 page 4/10 STPS15L45C-Y Characteristics (curves) Figure 5. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 6. Junction capacitance versus reverse voltage applied (typical values, per diode) IR (mA) C(nF) 10.0 1.E+03 F = 1 MHz VOSC = 30 mV Tj = 25 °C Tj = 150 °C 1.E+02 Tj = 125 °C T = 100 °C j 1.E+01 T = 75 °C j 1.E+00 1.0 Tj = 50 °C T = 25 °C j 1.E-01 VR (V) 1.E-02 0 5 10 15 20 25 VR(V) 0.1 30 35 40 45 Figure 7. Forward voltage drop versus forward current (per diode) 100 Tj = 125 °C (Maximum values) 100 Figure 8. Thermal resistance junction to ambient versus copper surface under tab IFM(A) 100 10 1 Rth(j-a) (°C/W) DPAK Epoxy printed circuit board, copper thickness: 35 µm 90 80 70 Tj = 125 °C 60 (Typical values) 10 50 40 Tj = 25 °C 30 (Maximum values) 20 VFM(V) 10 1 0.0 DS7145 - Rev 3 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 SCu (cm²) 0 0 5 10 15 20 25 30 35 40 page 5/10 STPS15L45C-Y Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 DPAK package information • • Epoxy meets UL94, V0 Lead-free packages Figure 9. DPAK package outline A E c2 b4 E1 L2 D1 H D L4 A1 b (2x) e R e1 c Seating plane A2 (L1) L V2 0.25 DS7145 - Rev 3 Gauge plane page 6/10 STPS15L45C-Y DPAK package information Table 4. DPAK mechanical data Dimensions Dim. Inches(1) Millimeters Min. Typ. Max. Min. Typ. Max. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b4 5.20 5.40 0.205 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 D1 4.95 5.25 0.195 E 6.40 6.60 0.252 E1 4.60 4.70 4.80 0.181 0.185 0.189 e 2.159 2.286 2.413 0.085 0.090 0.095 e1 4.445 4.572 4.699 0.175 0.180 0.185 H 9.35 10.10 0.368 0.398 L 1.00 1.50 0.039 0.059 (L1) 2.60 2.80 3.00 0.102 0.110 0.118 L2 0.65 0.80 0.95 0.026 0.031 0.037 L4 0.60 1.00 0.024 R V2 5.10 0.201 0.207 0.260 0.039 0.20 0.008 0° 8° 0° 8° 1. Inches dimensions given for reference only Figure 10. DPAK recommended footprint (dimensions are in mm) 6.3 6.1 10.7 2.8 1.8 min. B 1.5 4.572 A The device must be positioned within DS7145 - Rev 3 page 7/10 STPS15L45C-Y Ordering Information 3 Ordering Information Table 5. Ordering information Order code Marking Package Weight Base qty. Delivery mode STPS15L45CBY-TR S15L45CY DPAK 0.32 g 2500 Tape and reel For a list of available options (e.g. memory size, package) and orderable part numbers or for further information on any aspect of this device, please go to www.st.com or contact the ST Sales Office nearest to you. Note: DS7145 - Rev 3 Qualified and characterized according to AEC Q101. page 8/10 STPS15L45C-Y Revision history Table 6. Document revision history DS7145 - Rev 3 Date Version 10-Mar-2011 1 07-Jul-2015 2 29-Nov-2018 3 Changes First issue. Updated Table 2. Format updated to current standard. Added Section Applications on cover page. Updated Figure 5. Reverse leakage current versus reverse voltage applied (typical values, per diode) and Table 3. Static electrical characteristics (per diode). page 9/10 STPS15L45C-Y IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS7145 - Rev 3 page 10/10