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STPS16H100CFP

STPS16H100CFP

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    STPS16H100CFP - HIGH VOLTAGE POWER SCHOTTKY RECTIFIER - STMicroelectronics

  • 数据手册
  • 价格&库存
STPS16H100CFP 数据手册
® STPS16H100CT/CG/CFP/CR HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS s 2x8A 100 V 175 °C 0.64 V A2 K K A2 s s s s NEGLIGIBLE SWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP AVALANCHE CAPABILITY SPECIFIED K A1 A2 A1 TO-220AB STPS16H100CT D2PAK STPS16H100CG DESCRIPTION Dual center tap Schottky rectifier designed for high frequency miniature Switch Mode Power Supplies such as adaptators and on board DC/DC converters. A2 K A1 K A1 A2 TO-220FPAB STPS16H100CFP I2PAK STPS16H100CR ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current δ = 0.5 TO-220AB D2PAK / I2PAK TO-220FPAB IFSM IRRM IRSM PARM Tstg Tj dV/dt *: Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 165°C Tc = 150°C Per diode Per device Parameter Repetitive peak reverse voltage Value 100 30 8 16 200 1 2 8700 - 65 to + 175 175 10000 A A A W °C °C V/µs Unit V A A tp = 10 ms sinusoidal tp = 2 µs square F = 1kHz tp = 100 µs square tp = 1µs Tj = 25°C dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) 1/7 July 2003 - Ed: 2A STPS16H100CT/CG/CFP/CR THERMAL RESISTANCES Symbol Rth (j-c) Junction to ambient Parameter TO-220AB / D PAK / I PAK TO-220FPAB TO-220AB / D PAK / I PAK TO-220FPAB Rth (c) TO-220AB / D PAK / I PAK TO-220FPAB When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF** Parameter Reverse leakage Current Forward Voltage drop Tests Conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% 2 2 2 2 2 2 Value Per diode Total Coupling 1.6 4 1.1 3.5 0.6 3 Unit °C/W °C/W °C/W Min. Typ. 1.6 Max. 3.6 5 0.77 0.64 0.88 0.73 Unit µA mA V VR = VRRM IF = 8 A IF = 8 A IF = 16 A IF = 16 A 0.67 0.59 To evaluate the conduction losses use the following equation : P = 0.55 x IF(AV) + 0.011 x IF2(RMS) Fig. 1: Conduction losses versus average current. PF(AV)(W) 7 δ = 0.1 Fig. 2: Average forward current versus ambient temperature (δ=0.5). IF(AV)(A) 9 6 5 4 3 2 δ = 0.05 δ = 0.2 δ = 0.5 Rth(j-a)=Rth(j-c) TO-220AB/D²PAK/I²PAK 8 7 δ=1 6 5 4 3 Rth(j-a)=50°C/W T 2 1 T 1 IF(AV)(A) 0 0 1 2 3 4 5 6 7 δ=tp/T 8 9 tp 0 δ=tp/T 0 25 tp Tamb(°C) 50 75 100 125 150 175 10 2/7 STPS16H100CT/CG/CFP/CR Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1µs) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 0 25 50 75 100 125 150 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values) (TO-220AB, D²PAK, I²PAK). IM(A) 200 180 160 140 120 100 80 60 40 20 0 1.E-03 1.E-02 1.E-01 1.E+00 IM t TC=125°C TC=25°C Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values) (TO-220FPAB). IM(A) 120 110 100 90 80 70 60 50 40 30 20 IM t TC=125°C TC=75°C TC=25°C TC=75°C δ=0.5 t(s) 10 0 1.E-03 t(s) 1.E-02 1.E-01 1.E+00 δ=0.5 Fig. 6-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB, D²PAK & I²PAK). Zth(j-c) / Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Single pulse δ = 0.2 δ = 0.1 δ = 0.5 Fig. 6-2: Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB). Zth(j-c) / Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 δ = 0.2 δ = 0.1 δ = 0.5 T 0.2 0.1 tp T 0.1 0.0 1.E-03 1.E-02 tP(s) 1.E-01 δ=tp/T Single pulse tP(s) 1.E-02 1.E-01 0.0 1.E+00 δ=tp/T 1.E+00 tp 1.E-03 1.E+01 3/7 STPS16H100CT/CG/CFP/CR Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). IR(mA) 1.E+01 Tj=150°C Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(nF) 1.00 F=1MHz Vosc=30mV Tj=25°C 1.E+00 Tj=125°C 1.E-01 Tj=100°C Tj=75°C 0.10 1.E-02 Tj=50°C 1.E-03 Tj=25°C VR(V) 1.E-04 0 10 20 30 40 50 60 70 80 90 100 0.01 1 VR(V) 10 100 Fig. 9: current. IFM(A) 100 Forward voltage drop versus forward Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu = 35µm). Rth(j-a)(°C/W) 80 D²PAK 70 Tj=125°C (Maximum values) 60 50 10 Tj=125°C (Typical values) Tj=25°C (Maximum values) 40 30 20 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 0 0 5 10 15 S(cm²) 20 25 30 35 40 4/7 STPS16H100CT/CG/CFP/CR PACKAGE MECHANICAL DATA TO-220FPAB DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.6 0.173 0.181 2.5 2.7 0.098 0.106 2.5 2.75 0.098 0.108 0.45 0.70 0.018 0.027 0.75 1 0.030 0.039 1.15 1.70 0.045 0.067 1.15 1.70 0.045 0.067 4.95 5.20 0.195 0.205 2.4 2.7 0.094 0.106 10 10.4 0.393 0.409 16 Typ. 0.63 Typ. 28.6 30.6 1.126 1.205 9.8 10.6 0.386 0.417 2.9 3.6 0.114 0.142 15.9 16.4 0.626 0.646 9.00 9.30 0.354 0.366 3.00 3.20 0.118 0.126 REF. A H B Dia L6 L2 L3 L5 D F1 L4 F2 L7 F G1 G E A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. PACKAGE MECHANICAL DATA I2PAK DIMENSIONS REF. A E L2 c2 Millimeters Min. Max. 4.60 2.69 0.93 1.17 1.17 0.60 1.36 9.35 2.70 10.4 13.6 3.78 1.40 4.40 2.49 0.70 1.14 1.14 0.45 1.23 8.95 2.40 10.0 13.1 3.48 1.27 Inches Min. 0.173 0.098 0.028 0.044 0.044 0.018 0.048 0.352 0.094 0.394 0.516 0.137 0.050 Max. 0.181 0.106 0.037 0.046 0.046 0.024 0.054 0.368 0.106 0.409 0.535 0.149 0.055 A A1 b b1 b2 c c2 D L1 b2 L b1 b e D A1 e E L L1 c L2 5/7 STPS16H100CT/CG/CFP/CR PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. A E L2 Millimeters Min. Max. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 1.40 1.75 3.20 8° 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 10.00 4.88 15.00 1.27 1.40 2.40 0° Inches Min. 0.173 0.098 0.001 0.027 0.045 0.017 0.048 0.352 0.393 0.192 0.590 0.050 0.055 0.094 0° Max. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.409 0.208 0.624 0.055 0.069 0.126 8° A C2 A1 A2 D B B2 C L L3 A1 B2 B G A2 C R C2 D E G L L2 M L3 * V2 M R V2 * FLAT ZONE NO LESS THAN 2mm 0.40 typ. 0.016 typ. FOOTPRINT 16.90 10.30 1.30 5.08 3.70 8.90 6/7 STPS16H100CT/CG/CFP/CR PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. A H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Millimeters Min. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 13 2.65 15.25 6.20 3.50 3.75 Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 14 2.95 15.75 6.60 3.93 3.85 Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.511 0.104 0.600 0.244 0.137 0.147 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 0.551 0.116 0.620 0.259 0.154 0.151 C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 16.4 typ. 0.645 typ. 2.6 typ. 0.102 typ. s Ordering type Marking STPS16H100CT STPS16H100CT STPS16H100CFP STPS16H100CFP STPS16H100CG STPS16H100CG STPS16H100CG-TR STPS16H100CG STPS16H100CR STPS16H100CR EPOXY MEETS UL94,V0 Package TO-220AB TO-220FPAB D2PAK D2PAK I2PAK Weight 2.20 g 2.0 g 1.48 g 1.48 g 1.9 g Base qty 50 50 50 1000 50 Delivery mode Tube Tube Tube Tape & reel Tube Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7
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