STPS16L45CT

® STPS16L45CT/CFP LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 2x8A 45 V 150 °C 0.45 V A2 A1 K FEATURES AND BENEFITS LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES LOW SWITCHING LOSSES ALLOWING HIGH FREQUENCY OPERATION INSULATED PACKAGE: TO-220FPAB Insulated voltage: 2000V DC Capacitance: 12 pF AVALANCHE CAPABILITY SPECIFIED s s s s A2 A1 K A2 K A1 DESCRIPTION Dual center tap Schottky barrier rectifier designed for high frequency Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-220AB and TO-220FPAB, these devices are intended for use in low voltage, high frequency converters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current TO-220AB TO-220FPAB IFSM IRRM IRSM PARM Tstg Tj dV/dt *: Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage TO-220AB STPS16L45CT TO-220FPAB STPS16L45CFP Value 45 30 Tc = 140°C δ = 0.5 Tc = 125°C δ = 0.5 Per diode Per device Per diode Per device 8 16 8 16 180 1 2 4000 - 65 to + 150 150 10000 Unit V A A A A A A W °C °C V/µs tp = 10 ms sinusoidal tp=2 µs square F=1kHz tp = 100 µs square tp = 1µs Tj = 25°C dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) 1/5 July 2003 - Ed : 3C STPS16L45CT/CFP THERMAL RESISTANCES Symbol Rth(j-c) Junction to case Parameter TO-220AB TO-220FPAB Per diode Total Coupling Per diode Total Coupling Value 2.2 1.3 0.3 4.5 3.5 2.5 Unit °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions IR * Reverse leakage Tj = 25°C VR = VRRM current Tj = 125°C VF * Forward voltage drop Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : * tp = 380 µs, δ < 2% Min. Typ. 65 0.39 0.55 Max. 0.2 130 0.5 0.45 0.63 0.64 Unit mA mA V IF = 8 A IF = 8 A IF = 16 A IF = 16 A To evaluate the conduction losses use the following equation : P = 0.26 x IF(AV) + 0.024 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 Fig. 2: Average current versus temperature (δ = 0.5) (per diode). 9 8 7 6 5 4 3 2 1 0 IF(av)(A) Rth(j-a)=Rth(j-c) ambient TO-220AB Rth(j-a)=15°C/W TO-220FPAB δ=1 T T IF(av) (A) 0 1 2 3 4 5 6 7 δ=tp/T tp δ=tp/T tp Tamb(°C) 50 75 100 125 150 8 9 10 0 25 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1µs) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 0 25 50 75 100 125 150 2/5 STPS16L45CT/CFP Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values per diode, TO-220AB). IM(A) Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values per diode, TO-220FPAB). IM(A) 100 90 80 70 60 50 40 30 20 IM 10 0 1E-3 120 100 80 Tc=25°C Tc=25°C 60 40 IM Tc=75°C Tc=125°C t Tc=50°C Tc=100°C t 20 0 1E-3 δ=0.5 t(s) 1E-2 1E-1 1E+0 δ=0.5 t(s) 1E-2 1E-1 1E+0 Fig. 6-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 Single pulse δ = 0.5 Fig. 6-2: Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 T δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.2 δ = 0.1 T 0.2 tp(s) 1E-2 δ=tp/T tp Single pulse tp(s) δ=tp/T tp 0.0 1E-4 1E-3 1E-1 1E+0 0.0 1E-3 1E-2 1E-1 1E+0 1E+1 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values) (per diode). IR(mA) 2E+2 1E+2 1E+1 1E+0 1E-1 Tj=25°C Fig. 8: Junction capacitance versus reverse voltage applied (typical values) (per diode). C(pF) 2000 Tj=150°C F=1MHz Tj=25°C Tj=125°C 1000 500 Tj=75°C 200 VR(V) VR(V) 35 40 45 1E-2 0 5 10 15 20 25 30 100 1 2 5 10 20 50 3/5 STPS16L45CT/CFP Fig. 9: Forward voltage drop versus forward current (maximum values) (per diode). IFM(A) Typical values Tj=150°C 100.0 10.0 Tj=125°C Tj=25°C 1.0 Tj=75°C VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 PACKAGE MECHANICAL DATA TO-220FPAB REF. DIMENSIONS Millimeters A H B Inches Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.018 0.027 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.393 0.409 0.63 Typ. 1.126 1.205 0.386 0.417 0.114 0.142 0.626 0.646 0.354 0.366 0.118 0.126 Dia L6 L2 L3 L5 D F1 L4 F2 L7 F G1 G E A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. Min. Max. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.70 0.75 1 1.15 1.70 1.15 1.70 4.95 5.20 2.4 2.7 10 10.4 16 Typ. 28.6 30.6 9.8 10.6 2.9 3.6 15.9 16.4 9.00 9.30 3.00 3.20 4/5 STPS16L45CT/CFP PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Millimeters Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Ordering type STPS16L45CT Marking STPS16L45CT Package TO-220AB Weight 2g 2g Base qty 50 50 Delivery mode Tube Tube STPS16L45CFP STPS16L45CFP TO-220FPAB s s s s Epoxy meets UL94,V0 Cooling method : C Recommended torque value : 0.55 m.N Maximum torque value : 0.70 m.N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. 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