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STPS1H100MF

STPS1H100MF

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    DO-222AA

  • 描述:

    Diode Schottky 100V 1A Surface Mount STmite Flat

  • 数据手册
  • 价格&库存
STPS1H100MF 数据手册
STPS1H100MF Datasheet High voltage power Schottky rectifier Features • • • • • Negligible switching losses High junction temperature capability Low leakage current Good trade-off between leakage current and forward voltage drop Avalanche capability specified Description STmite Flat The STPS1H100MF is a Schottky rectifier designed for high frequency miniature switch mode power supplies such as adaptors and on-board DC/DC convertors. This device is housed in STmite flat package. It is ideal for lighting and telecom power applications. Product status link STPS1H100MF Product summary Symbol Value IF(AV) 1A VRRM 100 V Tj (max.) 175 °C VF (max.) 0.62 V DS5836 - Rev 2 - April 2018 For further information contact your local STMicroelectronics sales office. www.st.com STPS1H100MF Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current Value Unit 100 V 2 A IF(AV) Average forward current Tc = 160 °C, δ = 0.5 1 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 50 A PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 108 W -65 to +175 °C 175 °C Tstg Storage temperature range Tj Operating junction temperature range(1) 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal parameters Symbol Rth(j-c) Parameter Max. value Unit 20 °C/W Junction to case Table 3. Static electrical characteristics Symbol IR(1) Parameter Reverse leakage current Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C VF(2) Forward voltage drop Tj = 125 °C Tj = 25 °C Tj = 125 °C VR = VRRM IF = 1 A IF = 2 A Min. Typ. - 0.2 - Unit 4 µA 0.5 mA 0.77 0.58 - Max. 0.62 0.86 0.65 V 0.7 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.54 x IF(AV) + 0.08 x IF2(RMS) DS5836 - Rev 2 page 2/9 STPS1H100MF Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current 0.9 PF(AV)(W) Figure 2. Average forward current versus ambient temperature (δ = 0.5) 1.2 0.8 δ = 0.2 0.7 δ = 0.5 δ= 1 Rth(j-a)=Rth(j-c) 1.0 δ = 0.1 0.6 IF(AV)(A) 0.8 δ = 0.05 0.5 0.6 0.4 Rth(j-a)=250°C/W 0.4 0.3 T T 0.2 0.1 IF(AV)(A) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.2 0.7 0.8 0.9 1.0 δ=tp/T tp δ =tp/T 1.1 1.2 Figure 3. Normalized avalanche power derating versus junction temperature (Tj = 125 °C) 1 PARM (t p ) PARM (10 µs) tp Tamb (°C) 0.0 0 25 50 75 100 125 150 175 Figure 4. Forward voltage drop versus forward current 20.0 IFM(A) 18.0 16.0 Tj=125 °C (Maximum values) 14.0 12.0 0.1 10.0 Tj=125 °C (Typical values) 8.0 6.0 0.01 4.0 Tj=25 °C (Maximum values) 2.0 t p(µs) 0.001 1 DS5836 - Rev 2 10 100 1000 VFM(V) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 page 3/9 STPS1H100MF Characteristics (curves) Figure 5. Relative variation of thermal impedance, junction to ambient, versus pulse duration (epoxy printed circuit board, copper thickness = 35 μm, recommended pad layout) 1.0 Figure 6. Thermal resistance, junction to ambient, versus copper surface under tab (epoxy printed board FR4, copper thickness = 35 μm) 200 Zth(j-a) /Rth(j-a) Rth(j-a) (°C/W) STMite-Flat 0.9 150 0.8 0.7 0.6 100 0.5 0.4 50 0.3 0.2 0.1 t p (s) 0.0 1.E-02 1.E-01 1.E+00 0 0.0 1.E+01 1.E+02 IR(µA) Tj =150 °C 1.E+02 Tj =125 °C 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Figure 8. Junction capacitance versus reverse voltage applied (typical values) 100 1.E+03 0.5 1.E+03 Figure 7. Reverse leakage current versus voltage applied (typical values) 1.E+04 SCu (cm²) Single pulse C(pF) F = 1 MHz VOSC=30 mVRMS Tj=25 °C Tj =100 °C 1.E+01 Tj =75 °C 1.E+00 Tj =50 °C 1.E-01 Tj =25 °C 1.E-02 VR(V) VR(V) 10 1.E-03 0 DS5836 - Rev 2 20 40 60 80 100 1 10 100 page 4/9 STPS1H100MF Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 STmite Flat package information • Epoxy meets UL 94,V0 Figure 9. STmite Flat package outline L1 1 L2 L E1 1 E D b2 b L3 BOTTOM VIEW TOP VIEW C A FRONT VIEW RIGHT VIEW Table 4. STmite Flat package mechanical data Dimensions Ref. DS5836 - Rev 2 Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 0.80 0.85 0.95 0.031 0.033 0.037 b 0.40 0.55 0.65 0.016 0.022 0.026 b2 0.70 0.85 1.00 0.027 0.033 0.039 c 0.10 0.15 0.25 0.004 0.006 0.009 D 1.75 1.90 2.05 0.069 0.075 0.081 E 3.60 3.80 3.90 0.142 0.150 0.154 E1 2.80 2.95 3.10 0.110 0.116 0.122 L 0.50 0.55 0.80 0.020 0.022 0.031 L1 2.10 2.40 2.60 0.083 0.094 0.102 L2 0.45 0.60 0.75 0.018 0.024 0.030 L3 0.20 0.35 0.50 0.008 0.014 0.020 page 5/9 STPS1H100MF STmite Flat package information Figure 10. STmite Flat Recommended footprint (0.033) (0.025) 0.85 0.63 (0.079) 2.00 (0.026) 0.65 (0.026) 0.65 0.95 (0.037) 1.95 (0.077) 4.13 (0.163) millimeters (inches) DS5836 - Rev 2 page 6/9 STPS1H100MF Ordering information 3 Ordering information Table 5. Ordering information DS5836 - Rev 2 Order code Marking Package Weight Base qty. Delivery mode STPS1H100MF M11 STmite flat 16 mg 12000 Tape and reel page 7/9 STPS1H100MF Revision history Table 6. Document revision history Date Version 15-May-2008 1 Changes First issue. Removed figure 4 and figure 5. 10-Apr-2018 2 Updated Section ● Description, Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) and Figure 3. Normalized avalanche power derating versus junction temperature (Tj = 125 °C). Minor text changes to improve readability. DS5836 - Rev 2 page 8/9 STPS1H100MF IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS5836 - Rev 2 page 9/9
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