STPS1L20M_05

® STPS1L20M LOW DROP POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF(AV) VRRM Tj (max) VF(max) FEATURES AND BENEFITS ■ ■ ■ ■ ■ ■ 1A 20 V 150°C 0.37 V A C STmite (DO216-AA) Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop for higher efficiency and extented battery life Low thermal resistance Avalanche capability specified DESCRIPTION Single Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in STmite, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Due to the small size of the package this device fits battery powered equipment (cellular, notebook, PDA’s, printers) as well chargers and PCMCIA cards. Table 3: Absolute Ratings (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward voltage IF(AV) IFSM PARM Tstg Tj dV/dt Average forward current Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Table 2: Order Code Part Number STPS1L20M Marking 1L2 Value 20 2 Tc = 140°C δ = 0.5 tp = 10 ms sinusoidal tp = 1µs Tj = 25°C 1 50 1400 -65 to + 150 150 10000 Unit V A A A W °C °C V/µs Maximum operating junction temperature * Critical rate of rise of reverse voltage (rated VR, Tj = 25°C) dPtot 1 * : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink dTj Rth ( j – a ) November 2005 REV. 4 1/6 STPS1L20M Table 4: Thermal Resistance Symbol Rth(j-c) Rth(j-l)* Junction to case Junction to ambient Parameter Value 20 250 Unit °C/W °C/W * Mounted with minimum recommended pad size, PC board FR4. Table 5: Static Electrical Characteristics Symbol Parameter Tests conditions Tj = 25°C Tj = 85°C IR * Reverse leakage current Tj = 25°C Tj = 85°C Tj = 25°C Tj = 85°C Tj = 25°C VF * Forward voltage drop Tj = 85°C Tj = 25°C Tj = 85°C Pulse test: * tp = 380 µs, δ < 2% Min. Typ 0.015 0.9 0.005 0.45 Max. 0.075 4.5 0.035 2.5 0.025 1.6 0.43 0.37 0.53 0.49 Unit VR = VRRM VR = 10V VR = 5V mA 0.003 0.3 IF = 1A IF = 3A 0.38 0.32 0.46 0.42 2 V To evaluate the conduction losses use the following equation: P = 0.31 x IF(AV) + 0.06 IF (RMS) Figure 1: Conduction losses versus average current PF(AV)(W) 0.50 0.45 0.40 0.35 0.30 0.25 δ = 0.05 δ=1 δ = 0.1 δ = 0.2 δ = 0.5 Figure 2: Average forward current versus ambient temperature (δ = 0.5) IF(AV)(A) 1.1 Rth(j-a)=Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 Rth(j-a)=270°C/W 0.20 0.15 0.10 0.05 0.00 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 T 0.4 0.3 0.2 IF(AV)(A) δ=tp/T 1.0 1.1 0.1 tp Tamb(°C) 0 25 50 75 100 125 150 0.0 1.2 2/6 STPS1L20M Figure 3: Normalized avalanche derating versus pulse duration PARM(tp) PARM(1µs) 1 power Figure 4: Normalized avalanche derating versus junction temperature PARM(tp) PARM(25°C) 1.2 1 power 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 25 50 75 100 125 150 Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values) IM(A) 25 Figure 6: Relative variation of thermal impedance junction to ambient versus pulse duration Zth(j-c)/Rth(j-c) 1.0 0.9 20 0.8 0.7 15 TC=25°C 0.6 0.5 δ = 0.5 10 TC=75°C 0.4 0.3 δ = 0.2 δ = 0.1 Single pulse 5 TC=125°C IM t 0.2 0.1 T 0 1.E-03 δ=0.5 t(s) 1.E-02 1.E-01 1.E+00 tp(s) 1.E-03 1.E-02 0.0 1.E-04 δ=tp/T tp 1.E-01 Figure 7: Reverse leakage current versus reverse voltage applied (typical values) IR(mA) 1.E+02 Tj=150°C Figure 8: Reverse leakage current versus junction temperature (typical values) IR(mA) 1.E+02 VR=20V 1.E+01 Tj=125°C 1.E+01 Tj=100°C 1.E+00 Tj=75°C 1.E+00 1.E-01 Tj=50°C 1.E-01 1.E-02 Tj=25°C 1.E-02 VR(V) 1.E-03 0 2 4 6 8 10 12 14 16 18 20 Tj(°C) 1.E-03 0 25 50 75 100 125 150 3/6 STPS1L20M Figure 9: Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25°C Figure 10: Forward voltage drop versus forward current IFM(A) 2.0 1.8 1.6 1.4 1.2 Tj=85°C (typical values) Tj=85°C (maximum values) 100 1.0 0.8 0.6 0.4 Tj=25°C (maximum values) VR(V) 10 1 10 100 0.2 0.0 0.00 VFM(V) 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 Figure 11: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu = 35µm, typical values) Rth(j-a)(°C/W) 250 200 150 100 50 0 0 20 40 60 80 S(mm²) 100 120 140 160 180 200 4/6 STPS1L20M Figure 12: STmite Package Mechanical Data DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. A 0.85 1.00 1.15 0.033 0.039 A1 -0.05 0.05 -0.002 b 0.40 0.65 0.016 b2 0.70 1.00 0.027 c 0.10 0.25 0.004 D 1.75 1.90 2.05 0.069 0.007 E 1.75 1.90 2.05 0.069 0.007 H 3.60 3.75 3.90 0.142 0.148 L 0.50 0.63 0.80 0.020 0.025 L2 1.20 1.35 1.50 0.047 0.053 L3 0.50 0.019 ref ref R 0.07 0.003 R1 0.07 0.003 L3 D b2 b H L2 L R E C A1 R1 0° to 6° A Max. 0.045 0.002 0.025 0.039 0.010 0.081 0.081 0.154 0.031 0.059 Figure 13: Foot Print Dimensions (in millimeters) 1.82 1.38 2.03 1.10 0.75 0.50 0.71 Table 6: Ordering Information Ordering type STPS1L20M Marking 1L2 Package STmite Weight 15.5 mg Base qty 12000 Delivery mode Tape & reel Table 7: Revision History Date Jul-2003 13-Sep-2004 Revision 2A 3 Last update. STmite package dimensions reference A1 change: from blank (min) to -0.05mm and from 0.10 (max) to 0.05mm. Page 2, table 5: conduction losses evaluation values changed: 29-Nov-2005 4 . From P = 0.34 x IF(AV) + 0.07 IF2(RMS) . To P = 0.31 x IF(AV) + 0.06 IF2(RMS) 5/6 Description of Changes STPS1L20M Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 6/6