STPS1L30AU

® STPS1L30A/U LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH MEANS THE HIGHEST YIELD IN THE APPLICATIONS SURFACE MOUNT MINIATURE PACKAGE SMA STPS1L30A JEDEC DO-214AC SMB STPS1L30U JEDEC DO-214AA 1A 30 V 150 °C 0.3 V DESCRIPTION Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters, freewheel diode and integrated circuit latch up protection. Packaged in SMA and SMB, this device is especially intended for use in parallel with MOSFETs in synchronous rectification. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt *: RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage TL = 135°C δ = 0.5 tp = 10 ms Sinusoidal tp = 2 µs F = 1kHz square tp = 100 µs square Parameter Repetitive peak reverse voltage Value 30 10 1 75 1 1 - 65 to + 150 150 10000 Unit V A A A A A °C °C V/µs dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j−a) dTj 1/5 August 1999 - Ed: 4A STPS1L30A/U THERMAL RESISTANCES Symbol Rth (j-l) Junction to lead Parameter SMA SMB STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF * Parameters Reverse leakage Current Forward Voltage drop Tests Conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : * tp = 380 µs, δ < 2% Value 30 25 Unit °C/W Min. Typ. 6 Max. 200 15 0.395 0.3 0.445 Unit µA mA V VR = VRRM IF = 1 A 0.26 IF = 2 A 0.325 0.375 To evaluate the maximum conduction losses use the following equation : P = 0.225 x IF(AV) + 0.075 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.0 Fig. 2: Average forward current versus ambient temperature (δ=0.5). 1.2 IF(av)(A) Rth(j-a)=Rth(j-l) δ = 0.1 δ = 0.05 δ = 0.2 δ = 0.5 1.0 0.8 δ=1 Rth(j-a)=120°C/W Rth(j-a)=100°C/W 0.6 0.4 T T 0.2 IF(av) (A) 0.2 0.4 0.6 0.8 δ=tp/T tp 0.0 δ=tp/T tp Tamb(°C) 50 75 100 125 150 1.0 1.2 0 25 Fig. 3-1: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA). IM(A) 10 8 6 4 2 0 1E-3 IM t Fig. 3-2: Non repetitive surge peak forward current versus overload duration (maximum values) (SMB). IM(A) 10 8 Ta=25°C Ta=25°C 6 Ta=50°C Ta=50°C 4 Ta=100°C Ta=100°C 2 0 1E-3 IM t δ=0.5 t(s) 1E-2 1E-1 1E+0 δ=0.5 t(s) 1E-2 1E-1 1E+0 2/5 STPS1L30A/U Fig. 4-1: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35µm, recommended pad layout) (SMB). Zth(j-a)/Rth(j-a) 1.0 0.8 0.6 0.4 T Fig. 4-2: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35µm, recommended pad layout) (SMA). Zth(j-a)/Rth(j-a) 1.0 0.8 0.6 0.4 T 0.2 0.0 1E-2 tp(s) 1E-1 1E+0 1E+1 δ=tp/T tp 0.2 1E+2 5E+2 0.0 1E-2 tp(s) 1E-1 1E+0 1E+1 δ=tp/T tp 1E+2 5E+2 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). 1E+2 1E+1 1E+0 1E-1 1E-2 1E-3 0 5 Tj=25°C Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) 500 IR(mA) Tj=150°C Tj=125°C Tj=100°C F=1MHz Tj=25°C 100 VR(V) 10 15 20 25 30 10 1 2 VR(V) 5 10 20 30 Fig. 7-1: Forward voltage drop versus forward current (typical values, high level). IFM(A) 10.00 Fig. 7-2: Forward voltage drop versus forward current (maximum values, low level). IFM(A) Tj=125°C Tj=100°C 3.0 2.5 Tj=100°C 2.0 Tj=150°C Typical values Tj=150°C 1.00 Tj=25°C 1.5 Tj=25°C 1.0 0.5 VFM(V) 0.10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VFM(V) 0.0 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 3/5 STPS1L30A/U Fig. 8-1: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) (SMB). Rth(j-a) (°C/W) 120 100 80 60 40 20 S(Cu) (cm²) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 8-2: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) (SMA). Rth(j-a) (°C/W) 140 120 100 80 60 40 20 0 0 1 S(Cu) (cm²) 2 3 4 5 PACKAGE MECHANICAL DATA SMA DIMENSIONS REF. E1 Millimeters Min. Max. 2.70 0.20 1.65 0.41 5.60 4.60 2.95 1.60 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.106 0.008 0.065 0.016 0.220 0.181 0.116 0.063 A1 D 1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75 A2 b E c E A1 E1 C L A2 D b L FOOT PRINT DIMENSIONS (in millimeters) 1.65 1.45 2.40 1.45 4/5 STPS1L30A/U PACKAGE MECHANICAL DATA SMB DIMENSIONS E1 REF. Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 D A1 A2 b 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 E c E A1 E1 C L A2 D b L FOOT PRINT DIMENSIONS (in millimeters) 2.3 1.52 2.75 1.52 Ordering type STPS1L30U STPS1L30A Marking G23 GB3 Package SMB SMA Weight 0.107g 0.068g Base qty 2500 5000 Delivery mode Tape & reel Tape & reel Band indicates cathode Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5