STPS1L40

® STPS1L40 LOW DROP POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF(AV) VRRM Tj (max) VF(max) FEATURES AND BENEFITS ■ ■ ■ ■ ■ 1A 40 V 150°C 0.42 V SMA (JEDEC DO-214AC) STPS1L40A SMB (JEDEC DO-214AA) STPS1L40U Very small conduction losses Negligible switching losses Low forward voltage drop Surface mount miniature packages Avalanche capability specified DESCRIPTION Single chip Schottky rectifiers suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMA and SMB, this device is especially intended for surface mounting and used in low voltage, high frequency inverters, free wheeling and polarity protection applications. Table 3: Absolute Ratings (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward voltage IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage TL = 130°C δ = 0.5 tp = 10ms sinusoidal tp = 2µs F = 1kHz square tp = 100µs square tp = 1µs Tj = 25°C Value 40 8 1 60 1 1 900 -65 to + 150 150 10000 Unit V A A A A A W °C °C V/µs Table 2: Order Codes Part Number STPS1L40A STPS1L40U Marking GB4 GC4 1 dPt ot * : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink Rth ( j – a ) dTj August 2004 REV. 5 1/7 STPS1L40 Table 4: Thermal Resistance Symbol Rth(j-l) Junction to lead Parameter SMA SMB Value 30 25 Unit °C/W Table 5: Static Electrical Characteristics Symbol IR * Parameter Reverse leakage current Tests conditions Tj = 25°C Tj = 125°C Tj = 25°C VF * Forward voltage drop Tj = 125°C Tj = 25°C Tj = 125°C Pulse test: * tp = 380 µs, δ < 2% Min. Typ 6 0.37 0.5 Max. 35 10 0.5 0.42 0.63 0.61 Unit µA mA VR = VRRM IF = 1 A IF = 2 A V To evaluate the conduction losses use the following equation: P = 0.23 x IF(AV) + 0.19 IF (RMS) 2 Figure 1: Average forward power dissipation versus average forward current PF(AV)(W) 0.70 Figure 2: Average forward current versus ambient temperature (δ = 0.5) IF(AV)(A) δ = 0.1 0.60 0.50 δ = 0.2 1.2 δ = 0.5 1.0 0.8 0.6 Rth(j-a)=Rth(j-I) δ = 0.05 δ=1 Rth(j-a)=120°C/W 0.40 Rth(j-a)=100°C/W 0.30 0.4 0.20 0.10 T 0.2 T IF(AV)(A) 0.00 0.0 0.2 0.4 0.6 0.8 δ=tp/T 1.0 tp 0.0 δ=tp/T 0 25 tp 50 Tamb(°C) 75 100 125 150 1.2 Figure 3: Normalized avalanche derating versus pulse duration PARM(tp) PARM(1µs) 1 power Figure 4: Normalized avalanche derating versus junction temperature PARM(tp) PARM(25°C) 1.2 1 power 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 25 50 75 100 125 150 2/7 STPS1L40 Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA) IM(A) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1E-3 1E-2 1E-1 1E+0 IM t Figure 6: Non repetitive surge peak forward current versus overload duration (maximum values) (SMB) IM(A) 7 6 Ta=25°C 5 Ta=25°C 4 Ta=50°C 3 Ta=100°C Ta=50°C 2 IM Ta=100°C t 1 δ=0.5 t(s) 0 1E-3 δ=0.5 t(s) 1E-2 1E-1 1E+0 Figure 7: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35µm, recommended pad layout) (SMA) Zth(j-c)/Rth(j-c) 1.0 Figure 8: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35µm, recommended pad layout) (SMB) Zth(j-c)/Rth(j-c) 1.0 0.8 0.8 0.6 δ = 0.5 0.6 δ = 0.5 0.4 δ = 0.2 0.4 T 0.2 δ = 0.2 δ = 0.1 Single pulse T 0.2 δ = 0.1 Single pulse tp(s) 1E-1 1E+0 1E+1 δ=tp/T 1E+2 tp 5E+2 tp(s) 1E-1 1E+0 1E+1 δ=tp/T 1E+2 tp 5E+2 0.0 1E-2 0.0 1E-2 Figure 9: Reverse leakage current versus reverse voltage applied (typical values) IR(mA) 2E+1 1E+1 Figure 10: Junction capacitance versus reverse voltage applied (typical values) C(pF) 200 Tj=150°C F=1MHz Tj=25°C 1E+0 Tj=100°C 100 50 1E-1 1E-2 Tj=25°C 20 VR(V) 1E-3 0 5 10 15 20 25 30 35 40 VR(V) 10 1 2 5 10 20 50 3/7 STPS1L40 Figure 11: Forward voltage drop versus forward current (typical values, high level) IFM(A) 10.00 Figure 12: Forward voltage drop versus forward current (maximum values, low level) IFM(A) 3.0 2.5 Tj=125°C Tj=25°C Tj=125°C 1.00 Tj=150°C 2.0 Tj=25°C 1.5 Tj=150°C 0.10 1.0 0.5 VFM(V) 0.01 0 100 200 300 400 500 600 700 800 900 1000 0.0 0 100 200 300 VFM(V) 400 500 600 700 800 Figure 13: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) (SMA) Rth(j-a)(°C/W) 140 120 100 Figure 14: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) (SMB) Rth(j-a)(°C/W) 120 100 80 80 60 60 40 40 20 0 0 1 2 3 4 5 20 S(Cu)(cm²) 0 0.0 0.5 1.0 1.5 S(Cu)(cm²) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4/7 STPS1L40 Figure 15: SMA Package Mechanical Data DIMENSIONS E1 REF. Millimeters Min. Max. 2.03 0.20 1.65 0.41 5.60 4.60 2.95 1.60 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.080 0.008 0.065 0.016 0.220 0.181 0.116 0.063 D A1 A2 b 1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75 E c A1 E E1 b C L A2 D L Figure 16: SMA Foot Print Dimensions (in millimeters) 1.65 1.45 2.40 1.45 5/7 STPS1L40 Figure 17: SMB Package Mechanical Data DIMENSIONS E1 REF. Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 D A1 A2 b 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 E c A1 E E1 b C L A2 D L Figure 18: SMB Foot Print Dimensions (in millimeters) 2.3 1.52 2.75 1.52 6/7 STPS1L40 Table 6: Ordering Information Ordering type STPS1L40A STPS1L40U ■ ■ Marking GB4 GC4 Package SMA SMB Weight 0.068 g 0.107 g Base qty 5000 2500 Delivery mode Tape & reel Tape & reel Band indicates cathode Epoxy meets UL94, V0 Table 7: Revision History Date Jul-2003 Aug-2004 Revision 4A 5 Description of Changes Last update. SMA package dimensions update. Reference A1 max. changed from 2.70mm (0.106inc.) to 2.03mm (0.080). Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. 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