STPS1L60

STPS1L60

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    DO-41(DO-204AL)

  • 描述:

    DIODE SCHOTTKY 60V 1A DO41

  • 详情介绍
  • 数据手册
  • 价格&库存
STPS1L60 数据手册
® STPS1L60/A POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS s 1A 60 V 150°C 0.56 V DO-41 STPS1L60 s s NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Axial and Surface Mount Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO-41 and SMA, this device is intended for use in low voltage, high frequency inverters and small battery chargers. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current TL = 130°C δ = 0.5 TL = 120°C δ = 0.5 Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum junction temperature * Critical rate of rise of reverse voltage tp = 10 ms Sinusoidal tp = 1µs Tj = 25°C SMA DO-41 40 1200 - 65 to + 150 150 10000 A W °C °C V/µs Value 60 10 1 Unit V A A SMA STPS1L60A *: dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) 1/6 July 2003 - Ed: 5A STPS1L60/A THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-l) Junction to ambient Junction to leads Parameter Lead length = 10 mm Lead length = 10 mm DO-41 SMA DO-41 SMA STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Tests conditions Tj = 25°C Tj = 100°C VF * Forward voltage drop Tj = 25°C Tj = 100°C Tj = 125°C Tj = 25°C Tj = 100°C Tj = 125°C Pulse test : * tp = 380 µs, δ < 2% Value 100 120 45 30 Unit °C/W Min. Typ. Max. 50 Unit µA mA V VR = 60V 1.5 IF = 1 A 0.5 IF = 2 A 0.6 5 0.57 0.56 0.54 0.75 0.68 0.66 To evaluate the maximum conduction losses use the following equation: P = 0.44 x IF(AV) + 0.12 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. PF(AV)(W) 0.8 Fig. 2: Average forward current versus ambient temperature (δ = 0.5). IF(AV)(A) 1.2 δ = 0.1 δ = 0.05 0.6 δ = 0.2 δ = 0.5 Rth(j-a)=Rth(j-I) 1.0 SMA 0.8 Rth(j-a)=120°C/W DO-41 δ=1 0.4 0.6 Rth(j-a)=100°C/W 0.4 0.2 T 0.2 T IF(AV)(A) 0.0 0.0 0.2 0.4 0.6 0.8 δ=tp/T 1.0 tp 1.2 0.0 0 δ=tp/T 25 tp 50 Tamb(°C) 75 100 125 150 2/6 STPS1L60/A Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1µs) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 0 25 50 75 100 125 150 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values) (DO-41). IM(A) 8 7 6 5 4 3 2 IM Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA). IM(A) 8 7 6 Ta=25°C 5 Ta=25°C Ta=50°C 4 3 Ta=50°C Ta=100°C 2 IM Ta=100°C 1 0 1.E-03 t 1 t δ=0.5 t(s) 0 1.E-02 1.E-01 1.E+00 1.E-03 δ=0.5 t(s) 1.E-02 1.E-01 1.E+00 Fig. 6-1: Relative variation of thermal impedance junction to ambient versus pulse duration (DO-41). Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Single pulse δ = 0.2 δ = 0.5 Fig. 6-2: Relative variation of thermal impedance junction to ambient versus pulse duration (SMA). Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 δ = 0.2 δ = 0.1 Single pulse δ = 0.5 T δ = 0.1 T 0.2 tp(s) 1.E+01 0.0 1.E-01 1.E+00 δ=tp/T 1.E+02 0.1 tp 0.0 1.E+03 tp(s) 1.E-01 1.E+00 δ=tp/T 1.E+01 tp 1.E+02 1.E-02 3/6 STPS1L60/A Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). IR(mA) 1E+1 Tj=125°C Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(pF) 200 F=1MHz Tj=25°C 1E+0 Tj=100°C 100 1E-1 50 1E-2 Tj=25°C 1E-3 20 VR(V) 1E-4 0 5 10 15 20 25 30 35 40 45 50 55 60 VR(V) 10 1 10 100 Fig. 9-1: Forward voltage drop versus forward current (low level, maximum values) (DO-41). IFM(A) 2.0 1.8 Tj=100°C Fig. 9-2: Forward voltage drop versus forward current (high level, maximum values) (SMA). IFM(A) 10 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 2 Tj=25°C Tj=100°C 5 Tj=25°C VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 VFM(V) 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Fig. 10: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, Cu: 35µm) (SMA). Rth(j-)(°C/W) 140 120 100 80 Fig. 11: Thermal resistance versus lead length (DO-41). Rth(°C/W) 120 Rth(j-a) 100 80 60 Rth(j-I) 60 40 20 40 20 S(Cu)(cm²) 0 0 1 2 3 4 5 0 5 10 Lleads(mm) 15 20 25 4/6 STPS1L60/A PACKAGE MECHANICAL DATA SMA (JEDEC DO-214AC) DIMENSIONS E1 REF. Millimeters Min. Max. 2.70 0.20 1.65 0.41 5.60 4.60 2.95 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 Max. 0.106 0.008 0.065 0.016 0.220 0.181 0.116 D A1 A2 b 1.90 0.05 1.25 0.15 4.80 3.95 2.25 E c A1 E E1 b C L A2 D FOOT PRINT DIMENSIONS (in millimeters) 1.65 1.45 2.40 1.45 5/6 STPS1L60/A PACKAGE MECHANICAL DATA DO-41 plastic C A C OB / OD / OD / DIMENSIONS REF. Min. A B C 4.07 2.04 28 Millimeters Max. 5.20 2.71 Inches Min. 0.160 0.080 1.102 Max. 0.205 0.107 Ordering type STPS1L60 STPS1L60RL STPS1L60A s Marking Partnumber cathode ring Partnumber cathode ring GB6 Package DO-41 DO-41 SMA Weight 0.34g 0.34g 0.068 g Base qty 2000 5000 5000 Delivery mode Ammopack Tape & Reel Tape & Reel EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6
STPS1L60
PDF文档中包含的物料型号为:MAX31855KASA+。

器件简介指出MAX31855是一款冷结温度传感器,用于测量-40°C至+125°C范围内的温度。

引脚分配包括VCC、GND、SO、CS、和SI。

参数特性包括供电电压范围为2.0V至3.6V,I/O电压为1.8V至3.6V,转换速率为16次/秒,分辨率为0.25°C。

功能详解说明了MAX31855通过SPI接口与微控制器通信,能够检测热电偶的冷结补偿。

应用信息显示该器件适用于工业过程控制、医疗设备和环境监测。

封装信息为28引脚TQFN封装。
STPS1L60 价格&库存

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