STPS200170TV1
High voltage power Schottky rectifier
Datasheet - production data
A1
K1
Description
A2
K2
This high voltage Schottky rectifier is suited for
high frequency switch mode power supplies.
Packaged in ISOTOP, this device is intended for
use in the secondary rectification of applications.
A2
K2
Table 1: Device summary
A1
K1
ISOTOP
Features
Symbol
Value
IF(AV)
2 x 100 A
VRRM
170 V
Tj (max.)
150 °C
VF (max.)
0.63 V
Negligible switching losses
Avalanche rated
Low leakage current
Good trade-off between leakage current and
forward voltage drop
Insulated package ISOTOP:
Insulated voltage: 2500 VRMS
Capacitance: 45 pF
February 2018
DocID11857 Rev 3
This is information on a product in full production.
1/8
www.st.com
Characteristics
1
STPS200170TV1
Characteristics
Table 2: Absolute ratings (limiting values, per diode at Tamb = 25 °C, unless otherwise
specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
170
V
IF(RMS)
Forward rms current
200
A
IF(AV)
Average forward current, δ = 0.5
TC = 105 °C
100
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
700
A
PARM
Repetitive peak avalanche power
tp = 10 μs Tj = 125 °C
7400
W
-55 to +150
°C
150
°C
Tstg
Per diode
Storage temperature range
Maximum operating junction temperature(1)
Tj
Notes:
(1)(dP
tot/dTj)
< (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameters
Symbol
Rth(j-c)
Rth(c)
Parameter
Maximum values
Junction to case
Per diode
0.52
Total
0.31
Coupling thermal resistance
Unit
°C/W
0.1
When the diodes 1 and 2 are used simultaneously:
Δ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
Table 4: Static electrical characteristics
Symbol
IR(1)
Parameter
Test conditions
Reverse leakage current
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
VF(2)
Forward voltage drop
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VR = VRRM
IF = 100 A
IF = 200 A
Min.
Typ.
-
30
-
0.63
test: tp = 5 ms, δ < 2%
(2)Pulse
test: tp = 380 µs, δ < 2%
0.78
To evaluate the maximum conduction losses, use the following equation:
P = 0.5 x IF(AV) + 0.0018 x IF2(RMS)
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DocID11857 Rev 3
200
µA
100
mA
0.68
0.975
Notes:
(1)Pulse
Unit
0.85
-
Max.
0.86
V
STPS200170TV1
1.1
Characteristics
Characteristics (curves)
Figure 1: Conduction losses versus average
forward current (per diode)
Figure 2: Average forward current versus ambient
temperature (δ = 0.5, per diode)
PF(AV)(W)
IF(AV)(A)
100
120
δ=0.05
90
δ=0.1
δ=1
δ=0.5
δ=0.2
Rth(j-a)=Rth(j-c)
100
80
70
80
60
50
60
40
40
30
T
T
20
20
IF(AV)(A)
10
δ=tp/T
δ=tp/T
tp
0
Tamb (°C)
tp
0
0
20
40
60
80
100
120
Figure 3: Relative variation of thermal impedance
(junction to case) versus pulse duration
0
25
50
75
100
125
150
Figure 4: Reverse leakage current versus reverse
voltage applied (typical values, per diode)
IR(mA)
Z th(j-c) /R th (j -c)
1.E+03
1.0
0.9
1.E+02
Tj=150°C
0.8
Tj=125°C
1.E+01
0.7
δ=0.5
0.6
Tj=100°C
1.E+00
0.5
Tj=75°C
1.E-01
0.4
Tj=50°C
δ=0.2
0.3
1.E-02
T
δ=0.1
0.2
Tj=25°C
1.E-03
0.1
0.0
1.E-04
δ=tp/T
t P(s)
Single pulse
tp
VR(V)
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0
Figure 6: Forward voltage drop versus forward
current (per diode, low level)
IFM(A)
Figure 5: Junction capacitance versus reverse
voltage applied (typical values, per diode)
C(pF)
10000
1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 0 100 110 120 130 140 150 160 170
50
F=1MHz
VO SC =30mVR M S
Tj=25°C
45
Tj=150°C
(Maximum values)
40
35
Tj=150°C
(Typical values)
30
1000
Tj=25°C
(Maximum values)
25
20
15
10
5
1
VFM(V)
VR(V)
100
0
1 0
100
1000
0.0
DocID11857 Rev 3
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
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1.0
Characteristics
STPS200170TV1
Figure 7: Forward voltage drop versus forward
current (per diode, high level)
IFM(A)
1000
Figure 8: Normalized avalanche power derating
versus pulse duration
1
PARM (t p )
PARM (10 µs)
Tj=150°C
(Maximum values)
100
0.1
Tj=150°C
(Typical values)
Tj=25°C
(Maximum values)
0.01
10
t p (µs)
0.001
VFM(V)
1
1
0.0
4/8
0.1 0.2
0.3 0.4
0.5 0.6
0.7 0.8
0.9 1.0
1.1 1.2
1.3 1.4
DocID11857 Rev 3
10
100
1000
Package information
STPS200170TV1
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 1.3 N·m
Maximum torque value: 1.5 N·m
STMicroelectronics strongly recommends the use of the screws delivered with this product.
The use of any other screws is entirely at the user's own risk and will invalidate the
warranty.
2.1
ISOTOP package information
Figure 9: ISOTOP package outline
DocID11857 Rev 3
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Package information
STPS200170TV1
Table 5: ISOTOP package mechanical data
Dimensions
Ref.
Millimeters
Min.
Max.
Min.
Max.
A
11.80
12.20
0.465
0.480
A1
8.90
9.10
0.350
0.358
B
7.80
8.20
0.307
0.323
C
0.75
0.85
0.030
0.033
C2
1.95
2.05
0.077
0.081
D
37.80
38.20
1.488
1.504
D1
31.50
31.70
1.240
1.248
E
25.15
25.50
0.990
1.004
E1
23.85
24.15
0.939
0.951
E2
6/8
Inches
24.80
0.976
G
14.90
15.10
0.587
0.594
G1
12.60
12.80
0.496
0.504
G2
3.50
4.30
0.138
0.169
F
4.10
4.30
0.161
0.169
F1
4.60
5
0.181
0.197
H
-0.05
0.1
-0.002
0.004
Diam P
4
4.30
0.157
0.169
P1
4
4.40
0.157
0.173
S
30.10
30.30
1.185
1.193
DocID11857 Rev 3
Ordering information
STPS200170TV1
3
Ordering information
Table 6: Ordering information
4
Order code
Marking
Package
Weight
Base qty.
Delivery mode
STPS200170TV1
STPS200170TV1
ISOTOP
27 g
(without screws)
10
(with screws)
Tube
Revision history
Table 7: Document revision history
Date
Revision
Changes
14-Nov-2005
1
First issue.
09-Sep-2011
2
Updated VF max at Tj = 25 °C and IF = 100 A to 0.85 V.
12-Feb-2018
3
Updated Table 2: "Absolute ratings (limiting values, per diode at
Tamb = 25 °C, unless otherwise specified)" and the new PARM
curve at 10 µs.
DocID11857 Rev 3
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STPS200170TV1
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products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
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design of Purchasers’ products.
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
8/8
DocID11857 Rev 3
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