STPS20120CT

STPS20120C Power Schottky rectifier Main product characteristics IF(AV) VRRM Tj(max) VF(typ) 2 x 10 A 120 V 175° C 0.54 V A1 K A2 A1 A2 K TO-220FPAB STPS20120CFP K Feature and benefits ■ ■ ■ ■ High junction temperature capability Avalanche rated Low leakage current Good trade-off between leakage current and forward voltage drop A1 K A2 K A1 A2 TO-220AB STPS20120CT I2PAK STPS20120CR Description Dual center tap Schottky rectifier suited for high frequency switch mode power supply. Packaged in TO-220AB, I2PAK and TO-220FPAB, this device is intended to be used in notebook and LCD adaptors, desktop SMPS, providing in these applications a margin between the remaining voltages applied on the diode and the voltage capability of the diode. Table 1. Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj 1. dPtot --------------dTj Order code Part Number STPS20120CT STPS20120CR STPS20120CFP Marking STPS20120CT STPS20120CR STPS20120CFP Absolute ratings (limiting values, per diode) Parameter Repetitive peak reverse voltage RMS forward current Average forward current, δ = 0.5 TO-220AB, I2PAK TO-220FPAB Tc = 150° C Per diode Tc = 145° C Per device Tc = 125° C Per diode Tc = 100° C Per device tp = 10 ms Sinusoidal tp = 1 µs Tj = 25° C Value 120 30 10 20 10 20 150 4600 -65 to + 175 175 Unit V A A Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature(1) A W °C °C 1 < -------------------------- condition to avoid thermal runaway for a diode on its own heatsink Rth ( j – a ) May 2007 Rev 2 1/9 www.st.com 9 Characteristics STPS20120C 1 Characteristics Table 2. Symbol Thermal parameters Parameter I2PAK / TO-220AB Per diode Total Per diode Total Total TO-220FPAB 3.5 Value 3 1.8 5.5 4.5 0.6 ° C/W Unit Rth(j-c) Junction to case TO-220FPAB I2PAK / TO-220AB Rth(c) Coupling When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c) Table 3. Symbol IR(1) Static electrical characteristics (per diode) Test conditions Reverse leakage current Tj = 25° C Tj = 125° C Tj = 25° C Tj = 125° C VR = VRRM Min. Typ. Max. 10 1.5 5 0.7 IF = 2.5 A 0.54 0.58 0.92 IF = 10 A V 0.7 0.74 1.02 IF = 20 A 0.81 0.86 Unit µA mA VF(2) Forward voltage drop Tj = 25° C Tj = 125° C Tj = 25° C Tj = 125° C 1. Pulse test : tp = 5 ms, δ < 2% 2. Pulse test : tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.62 x IF(AV) + 0.012 IF2(RMS) 2/9 STPS20120C Characteristics Figure 1. Average forward power dissipation Figure 2. versus average forward current (per diode) IF(AV)(A) 11 Average forward current versus ambient temperature (δ = 0.5, per diode) Rth(j-a)=Rth(j-c) PF(AV)(W) 10 9 8 7 6 5 5 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 10 9 δ=1 8 Rth(j-a)=15°C/W TO-220FPAB TO-220AB I²PAK 7 6 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 4 T 3 T 2 1 0 IF(AV)(A) δ=tp/T 10 11 12 tp 13 δ=tp/T 0 25 tp 50 Tamb(°C) 75 100 125 150 175 Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Normalized avalanche power derating versus junction temperature PARM(tp) PARM(1µs) 1 PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(µs) 0 10 100 1000 Tj(°C) 25 50 75 100 125 150 Figure 5. Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB / I2PAK) Figure 6. Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220FPAB) IM(A) 140 120 IM(A) 100 80 100 80 60 40 IM 60 Tc=25°C Tc=25°C Tc=75°C Tc=75°C 40 Tc=125°C Tc=125°C t 20 IM t 20 0 1.E-03 δ=0.5 t(s) 0 1.E-02 1.E-01 1.E+00 δ=0.5 t(s) 1.E-02 1.E-01 1.E+00 1.E-03 3/9 Characteristics STPS20120C Figure 7. Relative variation of thermal Figure 8. impedance junction to case versus pulse duration (TO-220AB & I2PAK) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB) Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 Zth(j-c)/Rth(j-c) T 0.2 Single pulse T 0.2 Single pulse 0.1 0.0 1.E-03 1.E-02 tp(s) 1.E-01 δ=tp/T tp 1.E+00 0.1 0.0 1.E-03 1.E-02 tp(s) 1.E-01 δ=tp/T 1.E+00 tp 1.E+01 Figure 9. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 10. Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25°C IR(mA) 1.E+01 Tj=150°C 1.E+00 Tj=125°C 1.E-01 Tj=100°C Tj=75°C 1.E-02 Tj=50°C 100 1.E-03 Tj=25°C 1.E-04 VR(V) 1.E-05 0 10 20 30 40 50 60 70 80 90 100 110 120 VR(V) 10 1 10 100 Figure 11. Forward voltage drop versus forward current (per diode) IFM(A) 100 Tj=125°C (maximum values) Tj=125°C (typical values) Tj=25°C (maximum values) 10 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 4/9 STPS20120C Package information 2 Package information ● ● ● ● Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 Nm Maximum torque value: 1.0 Nm TO-220AB dimensions Dimensions Ref. Millimeters Min. A C H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Table 4. Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 16.4 typ. 13 2.65 15.25 6.20 3.50 14 2.95 15.75 6.60 3.93 0.645 typ. 0.511 0.104 0.600 0.244 0.137 0.551 0.116 0.620 0.259 0.154 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 5/9 Package information Table 5. I2PAK dimensions STPS20120C Dimensions Ref. Millimeters Min. A 4.40 2.49 0.70 1.14 1.14 0.45 1.23 8.95 2.40 10.0 13.1 3.48 1.27 Max. 4.60 2.69 0.93 1.70 1.70 0.60 1.36 9.35 2.70 10.4 13.6 3.78 1.40 Inches Min. 0.173 0.098 0.028 0.044 0.044 0.018 0.048 0.352 0.094 0.394 0.516 0.137 0.050 Max. 0.181 0.106 0.037 0.067 0.067 0.024 0.054 0.368 0.106 0.409 0.535 0.149 0.055 A E L2 c2 A1 b b1 D b2 c L1 b2 L b1 b e c2 A1 D e E L c L1 L2 6/9 STPS20120C Table 6. TO-220FPAB dimensions Package information Dimensions Ref. Millimeters Min. A A H B Inches Min. 0.173 0.098 0.098 0.018 0.030 0.045 0.045 0.195 0.094 0.393 Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.205 0.106 0.409 Max. 4.6 2.7 2.75 0.70 1 1.70 1.70 5.20 2.7 10.4 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 B D E Dia L6 L2 L3 L5 F1 L4 F2 D L7 F F1 F2 G G1 H L2 E 16 Typ. 28.6 9.8 2.9 15.9 9.00 3.00 30.6 10.6 3.6 16.4 9.30 3.20 0.63 Typ. 1.126 0.386 0.114 0.626 0.354 0.118 1.205 0.417 0.142 0.646 0.366 0.126 F G1 G L3 L4 L5 L6 L7 Dia. In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 7/9 Ordering information STPS20120C 3 Ordering information Ordering type STPS20120CT STPS20120CR STPS20120CFP Marking STPS20120CT STPS20120CR STPS20120CFP Package TO-220AB I PAK TO-220FPAB 2 Weight 2.23 g 1.49 g 2.0 g Base qty 50 50 50 Delivery mode Tube Tube Tube 4 Revision history Date 18-Feb-2005 03-May-2007 Revision 1 2 First issue Reformatted to current standards. Added TO-220FPAB package. Description of Changes 8/9 STPS20120C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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