STPS2060C_06

STPS2060C High voltage power Schottky rectifier Main product characteristics IF(AV) VRRM Tj (max) VF (max) 2 x 10 A 60 V 150° C 0.7 V K A1 A2 A2 A1 K Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. Packaged in TO-220, this device is intended for use in medium voltage operation, and particularly, in high frequency circuitries where low switching losses and low noise are required. TO-220AB STPS2060CT Features and benefits ■ ■ ■ Negligible switching losses Low forward voltage drop Low capacitance High reverse avalanche surge capability Avalanche rated Order code Part Number STPS2060CT Marking STPS2060CT ■ ■ Table 1. Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj 1. d Ptot --------------dTj Absolute ratings (limiting values, per diode at 25° C, unless otherwise specified) Parameter Repetitive peak reverse voltage RMS forward current Average forward current δ = 0.5 Tc = 135° C tp = 10 ms sinusoidal tp = 1 µs Tj = 25° C Per diode Per diode Per device Per diode Per device Value 60 20 10 A 20 200 10800 -65 to + 150 150 A W °C °C Unit V A Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature (1) < 1 ------------------------Rth ( j – a ) condition to avoid thermal runaway for a diode on its own heatsink July 2006 Rev 1 1/7 www.st.com 7 Characteristics STPS2060C 1 Table 2. Symbol Rth(j-c) Rth(c) Characteristics Thermal resistance Parameter Per diode Junction to case Total Coupling 0.9 0.15 °C/W Value 1.6 Unit When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 3. Symbol IR(1) Static electrical characteristics (per diode) Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Tj = 25° C VR = VRRM IF = 10 A IF = 10 A IF = 20 A IF = 20 A 0.75 0.60 Min. Typ. Max. 150 100 0.80 0.70 V 0.94 0.85 Unit µA mA VF(2) Forward voltage drop Tj = 125° C Tj = 25° C Tj = 125° C 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.55 x IF(AV) + 0.015 IF2(RMS) 2/7 STPS2060C Characteristics Figure 1. Conduction losses versus average Figure 2. current (per diode) IF(AV)(A) δ = 0.05 δ = 0.1 11 Average forward current versus ambient temperature (δ = 0.5, per diode) Rth(j-a)=Rth(j-c) PF(AV)(W) 9 δ = 0.2 8 7 6 5 4 3 2 1 0 0 1 2 δ = 0.5 10 9 δ=1 8 7 6 5 4 Rth(j-a)=15°C/W T 3 T 2 1 0 IF(AV)(A) 3 4 5 6 7 8 9 δ=tp/T 10 11 tp 12 δ=tp/T 0 25 tp 50 Tamb(°C) 75 100 125 150 Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Normalized avalanche power derating versus junction temperature PARM(tp) PARM(1µs) 1 1.2 1 PARM(tp) PARM(25°C) 0.1 0.8 0.6 0.4 0.2 0.01 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 25 50 75 100 125 150 Figure 5. Non repetitive surge peak forward current versus overload duration (maximum values, per diode) Figure 6. Relative variation of thermal impedance junction to case versus pulse duration IM(A) 180 160 140 120 100 Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 δ = 0.5 0.6 0.5 80 TC=50°C 0.4 0.3 0.2 δ = 0.2 δ = 0.1 60 40 20 0 1.E-03 1.E-02 1.E-01 IM TC=75°C T TC=110°C t Single pulse δ=0.5 t(s) 1.E+00 0.1 0.0 1.E-03 1.E-02 tp(s) 1.E-01 δ=tp/T tp 1.E+00 3/7 Characteristics STPS2060C Figure 7. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 8. Junction capacitance versus reverse voltage applied (typical values, per diode) IR(mA) 1.E+01 Tj=125°C C(pF) 10000 F=1MHz VOSC=30mVRMS Tj=25°C 1.E+00 Tj=100°C Tj=75°C 1.E-01 Tj=50°C 1000 1.E-02 Tj=25°C 1.E-03 0 10 20 VR(V) 30 40 50 60 VR(V) 100 1 10 100 Figure 9. Forward voltage drop versus forward current (maximum values, per diode) IFM(A) 1000 Tj=125°C 100 10 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 4/7 STPS2060C Package information 2 Package information Epoxy meets UL94,V0 Table 4. TO-220AB dimensions Dimensions Ref. Millimeters Min. A C H2 Dia L5 L7 L6 L2 F2 F1 L9 L4 F G1 G M E D C A Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 16.4 typ. 13 2.65 15.25 6.20 3.50 14 2.95 15.75 6.60 3.93 0.645 typ. 0.511 0.104 0.600 0.244 0.137 0.551 0.116 0.620 0.259 0.154 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 Cooling Method: C Recommended torque value: 0.55 Nm Maximum torque value: 0.70 Nm In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering information STPS2060C 3 Ordering information Ordering type STPS2060CT Marking STPS2060CT Package TO-220AB Weight 2.2 g Base qty 50 Delivery mode Tube 4 Revision History Date 25-Jul-2006 Revision 1 First issue. Changes 6/7 STPS2060C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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